Point Group Symmetry Analysis of the Electronic Structure of Bare and Protected Metal Nanocrystals

The electronic structures of a variety of experimentally identified gold and silver nanoclusters from 20 to 246 atoms, either unprotected or protected by several types of ligands, are characterized by using point group specific symmetry analysis. The delocalized electron states around the HOMO-LUMO energy gap, originating from the metal s-electrons in the cluster core, show symmetry characteristics according to the point group that describes best the atomic arrangement of the core. This indicates strong effects of the lattice structure and overall shape of the metal core to the electronic structure, which cannot be captured by the conventional analysis based on identification of spherical angular momentum shells in the superatom model. The symmetry analysis discussed in this paper is free from any restrictions regarding shape or structure of the metal core, and is shown to be superior to the conventional spherical harmonics analysis for any symmetry that is lower than Ih. As an immediate application, we also demonstrate that it is possible to reach considerable savings in computational time by using the symmetry information inside a conventional linear-response calculation for the optical absorption spectrum of the Ag55 cluster anion, without any loss in accuracy of the computed spectrum. Our work demonstrates an efficient way to analyze the electronic structure of non-spherical, but atomically ordered nanocrystals and ligand-protected clusters with nanocrystal metal cores and it can be viewed as the generalization of the superatom model demonstrated for spherical shapes ten years ago (Walter et al., PNAS 2008, 105, 9157)

Semiclassical theory of electron drag in strong magnetic fields

We present a semiclassical theory for electron drag between two parallel two-dimensional electron systems in a strong magnetic field, which provides a transparent picture of the most salient qualitative features of anomalous drag phenomena observed in recent experiments, especially the striking sign reversal of drag at mismatched densities. The sign of the drag is determined by the curvature of the effective dispersion relation obeyed by the drift motion of the electrons in a smooth disorder potential. Localization plays a role in explaining activated low temperature behavior, but is not crucial for anomalous drag per se.Comment: 10 page

Calculation of single event burnout failure rate for high voltage devices under satellite orbit without fitting parameters

Increase of power bus voltages in spacecraft are expected with the power demand growth. Accordingly, high voltage semiconductor devices in the power supply system will be required to withstand high energy and high flux cosmic ray environment. In this paper, we propose a new formula to calculate failure rate for power semiconductor devices in space application

Development of fast short-circuit protection system for advanced IGBT

The higher current density of IGBTs has made it difficult to achieve high short-circuit withstand capability as well as good conduction characteristics. Therefore, a fast and reliable protection system is required for the safe operation of IGBT. This paper determines the short-circuit safe protection area (SCSPA) for advanced IGBT that has no short-circuit withstand capability and proposes the protection system satisfied this SCSPA. The fast protection is brought by PCB Rogowski coil and digital gate driver using digital circuit (FPGA). Experimental results verify that short-circuit detection time is 70 ns, shut-down time is reduced by controlling the gate resistance at turn-off

Shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction

Attention has been paid to the next-generation IGBT toward CMOS compatible wafer processes, which can be driven by a 5-V logic level due to its low threshold gate voltage. This low threshold voltage makes the so-called shoot-through fault severer. Even though the switching speed of the IGBT is intentionally reduced, the shoot-through fault can happen. This paper presents shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction. Theoretical analysis reveals the criterion of the gate impedance with taking parasitic parameters of the inverter into account

Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications

The shoot-through phenomenon has not been fully discussed for high-power inverters with IGBTs. This is because a negative gate voltage is applied to IGBTs during off states. Recently, attention is paid to an improved gate driver with only a positive gate voltage in order to meet demands for simplification, integration, and reduction in power consumption as well as in cost of the gate driver. Moreover, the threshold voltage of the next-generation IGBT will decrease with microfabrication techniques of the gate structure. This will make the shoot-through phenomenon severer and degrade the inverter reliability with the next-generation IGBTs. The influence of the parasitic parameters in both the IGBT and circuit on the shoot-through mechanism has not been investigated so far.This paper clarifies the shoot-through mechanism and investigates the impact of the next generation IGBTs on the inverter reliability. The influence of the internal capacitance of IGBT including stray inductance on inverter reliability is experimentally confirmed

Randomized scheduling feasibility study of S-1 for adjuvant chemotherapy in advanced head and neck cancer

The purpose of this study was to determine the feasible adjuvant therapy administration schedule of S-1 for locoregionally advanced squamous cell carcinoma of the head and neck (SCCHN). Patients receiving definitive treatments were randomly assigned to either arm A (51 cases) receiving oral S-1 of 2-week administration followed by 1-week rest for 6 months, or arm B receiving S-1 of 4-week administration followed by 2-week rest for 6 months. Planned treatment was given in 40% of patients in arm A and 29% in arm B. The cumulative rates of the relative total administration dose of S-1 at 100% were 54.9% (95% CI: 40.1–69.7%) in arm A and 34.3% (95% CI: 21.1–47.4%) in arm B, respectively (P=0.054). Adverse events were recorded in 41 patients (82.0%) in arm A and 48 patients (94.1%) in arm B (P=0.060). The incidences of diarrhoea (10 vs 28%; P<0.05) and skin toxicities (18 vs 37%; P<0.05) were significantly higher in arm B. One-year disease-free survival was similar in both arms: arm A 81.2% (95% CI: 70.0–92.4%); arm B 77.0% (95% CI: 65.0–89.0%). The schedule of 2-week administration followed by 1-week rest seems to be more feasible for oral 6-month administration of S-1 in adjuvant chemotherapy of locoregionally advanced SCCHN