High Input Impedance Voltage-Mode Universal Biquadratic Filters With Three Inputs Using Three CCs and Grounding Capacitors

Two current conveyors (CCs) based high input impedance voltage-mode universal biquadratic filters each with three input terminals and one output terminal are presented. The first circuit is composed of three differential voltage current conveyors (DVCCs), two grounded capacitors and four resistors. The second circuit is composed of two DVCCs, one differential difference current conveyor (DDCC), two grounded capacitors and four grounded resistors. The proposed circuits can realize all the standard filter functions, namely, lowpass, bandpass, highpass, notch and allpass filters by the selections of different input voltage terminals. The proposed circuits offer the features of high input impedance, using only grounded capacitors and low active and passive sensitivities. Moreover, the x ports of the DVCCs (or DDCC) in the proposed circuits are connected directly to resistors. This design offers the feature of a direct incorporation of the parasitic resistance at the x terminal of the DVCC (DDCC), Rx, as a part of the main resistance

ANALYSIS OF GROUND REACTION FORCE DURING FASTBALL AND CHANGE-UP SOFTBALL PITCHES

The lower extremity provides stability and balance when we exercise. The roles what lower extremity plays should be clarified during pitching. Therefore, the purpose of this study was to observe the differences of ground reaction force for fastball and change-up windmill softball pitching

Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation

We demonstrate that a single short pulse of electron irradiation of appropriate energy is capable of recrystallizing epitaxially an amorphous Ge layer deposited on either or Si single-crystal substrate. The primary defects observed in the case were dislocations, whereas stacking faults were observed in samples

Epitaxial growth of deposited amorphous layer by laser annealing

We demonstrate that a single short pulse of laser irradiation of appropriate energy is capable of recrystallizing in open air an amorphous Si layer deposited on a (100) single-crystal substrate into an epitaxial layer. The laser pulse annealing technique is shown to overcome the interfacial oxide obstacle which usually leads to polycrystalline formation in normal thermal annealing

Production of large-particle-size monodisperse latexes

The research program achieved two objectives: (1) it has refined and extended the experimental techniques for preparing monodisperse latexes in quantity on the ground up to a particle diameter of 10 microns; and (2) it has demonstrated that a microgravity environment can be used to grow monodisperse latexes to larger sizes, where the limitations in size have yet to be defined. The experimental development of the monodisperse latex reactor (MLR) and the seeded emulsion polymerizations carried out in the laboratory prototype of the flight hardware, as a function of the operational parameters is discussed. The emphasis is directed towards the measurement, interpretation, and modeling of the kinetics of seeded emulsion polymerization and successive seeded emulsion polymerization. The recipe development of seeded emulsion polymerization as a function of particle size is discussed. The equilibrium swelling of latex particles with monomers was investigated both theoretically and experimentally. Extensive studies are reported on both the type and concentration of initiators, surfactants, and inhibitors, which eventually led to the development of the flight recipes. The experimental results of the flight experiments are discussed, as well as the experimental development of inhibition of seeded emulsion polymerization in terms of time of inhibition and the effect of inhibitors on the kinetics of polymerization

Laser pulse annealing of ion-implanted GaAs

GaAs single-crystals wafers are implanted at room temperature with 400-keV Te + ions to a dose of 1×10^15 cm^–2 to form an amorphous surface layer. The recrystallization of this layer is investigated by backscattering spectrometry and transmission electron microscopy after transient annealing by Q-switched ruby laser irradiation. An energy density threshold of about 1.0 J/cm^2 exists above which the layer regrows epitaxially. Below the threshold the layer is polycrystalline; the grain size increases as the energy density approaches threshold. The results are analogous to those reported for the elemental semiconductors, Si and Ge. The threshold value observed is in good agreement with that predicted by the simple model successfully applied previously to Si and Ge

Borel-Cantelli sequences

A sequence $\{x_{n}\}_1^\infty$ in $[0,1)$ is called Borel-Cantelli (BC) if for all non-increasing sequences of positive real numbers $\{a_n\}$ with $\underset{i=1}{\overset{\infty}{\sum}}a_i=\infty$ the set $$\underset{k=1}{\overset{\infty}{\cap}} \underset{n=k}{\overset{\infty}{\cup}} B(x_n, a_n))=\{x\in[0,1)\mid |x_n-x|<a_n \text{for} \infty \text{many}n\geq1\}$$ has full Lebesgue measure. (To put it informally, BC sequences are sequences for which a natural converse to the Borel-Cantelli Theorem holds). The notion of BC sequences is motivated by the Monotone Shrinking Target Property for dynamical systems, but our approach is from a geometric rather than dynamical perspective. A sufficient condition, a necessary condition and a necessary and sufficient condition for a sequence to be BC are established. A number of examples of BC and not BC sequences are presented. The property of a sequence to be BC is a delicate diophantine property. For example, the orbits of a pseudo-Anosoff IET (interval exchange transformation) are BC while the orbits of a "generic" IET are not. The notion of BC sequences is extended to more general spaces.Comment: 20 pages. Some proofs clarifie