Properties of arsenic-implanted Hg1-xCdxTe MBE films

Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate

Dirac’s HdCdTe semimetals grown by MBE technology

Peculiarities of the MBE growth technology for the Dirac’s semimetal based on the Hg1-xCdxTe alloys have been presented. Composition of layers was controlled by ToF-SIMS, FTIR measurements, and by the E1+Δ1 maximum position of optical reflectivity in visible reason. The surface morphology has by determined via atomic force and electron microscopy

Composition of PbTe oxides obtained by different methods

The widespread use of PbTe nanocomposites requires knowledge regarding the composition of their grain boundaries. Cathodoluminescence (CL), TOF-SIMS and Rutherford backscattering spectroscopy (RBS) were used to explore the composition of surface layers formed via thermal, electrochemical, and wet chemical oxidation of lead telluride. Surface layers obtained by these methods contained components with different degrees of oxidation. RBS and CL results show that thermal and anodic oxidation produced ternary PbTeO_{3} and Pb_{2}TeO_{4} oxides, respectively. For the chemical oxide we observed a substantially lower concentration of oxygen described by PbO_{1-x}TeO_{2-x}, a significant amount of non-oxidized PbTe ions detected by SIMS, and low CL stability under electron beam radiation. Thus, the chemical oxide is likely a mixture of binary suboxides

Properties of arsenic-implanted Hg1-xCdxTe MBE films

Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate