Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence

Imaging the band-to-band photoluminescence of silicon wafers is known to provide rapid and high-resolution images of the carrier lifetime. Here, we show that such photoluminescence images, taken before and after dissociation of iron-boron pairs, allow an accurate image of the interstitial iron concentration across a boron-doped p-type silicon wafer to be generated. Such iron images can be obtained more rapidly than with existing point-by-point iron mapping techniques. However, because the technique is best used at moderate illumination intensities, it is important to adopt a generalized analysis that takes account of different injection levels across a wafer. The technique has been verified via measurement of a deliberately contaminated single-crystal silicon wafer with a range of known iron concentrations. It has also been applied to directionally solidified ingot-grown multicrystalline silicon wafers made for solar cell production, which contain a detectible amount of unwanted iron. The iron images on these wafers reveal internal gettering of iron to grain boundaries and dislocated regions during ingot growth.D.M. is supported by an Australian Research Council QEII Fellowship. The Centre of Excellence for Advanced Silicon Photovoltaics and Photonics at UNSW is funded by the Australian Research Council

Imaging crystal orientations in multicrystalline silicon wafers via photoluminescence

We present a method for monitoring crystal orientations in chemically polished and unpassivated multicrystalline silicon wafers based on band-to-band photoluminescence imaging. The photoluminescence intensity from such wafers is dominated by surface recombination, which is crystal orientation dependent. We demonstrate that a strong correlation exists between the surface energy of different grain orientations, which are modelled based on first principles, and their corresponding photoluminescence intensity. This method may be useful in monitoring mixes of crystal orientations in multicrystalline or so-called “cast monocrystalline” wafers.H. C. Sio acknowledges scholarship support from BT Imaging and the Australian Solar Institute, and the Centre for Advanced Microscopy at ANU for SEM access. This work has been supported by the Australian Research Council

Progress in atom chips and the integration of optical microcavities

We review recent progress at the Centre for Cold Matter in developing atom chips. An important advantage of miniaturizing atom traps on a chip is the possibility of obtaining very tight trapping structures with the capability of manipulating atoms on the micron length scale. We recall some of the pros and cons of bringing atoms close to the chip surface, as is required in order to make small static structures, and we discuss the relative merits of metallic, dielectric and superconducting chip surfaces. We point out that the addition of integrated optical devices on the chip can enhance its capability through single atom detection and controlled photon production. Finally, we review the status of integrated microcavities that have recently been demonstrated at our Centre and discuss their prospects for future development.Comment: 12 pages, 6 figures, proceedings of the ICOLS07 conferenc

Photonics in photovoltaic systems

This paper gives an overview on photonics for photovoltaic systems. Starting from the spectral and angular distribution of the electromagnetic radiation from the sun, many important optical approaches how to improve the efficiency of solar cells are presented and discussed. Topics include antireflective coatings, various light trapping structures, refractive, reflective and fluorescent concentrators, and components for spectral management. The theoretical background is shortly described and examples of the experimental and also of the commercial realisation are given

Robust Entanglement through Macroscopic Quantum Jumps

We propose an entanglement generation scheme that requires neither the coherent evolution of a quantum system nor the detection of single photons. Instead, the desired state is heralded by a {\em macroscopic} quantum jump. Macroscopic quantum jumps manifest themselves as a random telegraph signal with long intervals of intense fluorescence (light periods) interrupted by the complete absence of photons (dark periods). Here we show that a system of two atoms trapped inside an optical cavity can be designed such that a dark period prepares the atoms in a maximally entangled ground state. Achieving fidelities above 0.9 is possible even when the single-atom cooperativity parameter C is as low as 10 and when using a photon detector with an efficiency as low as eta = 0.2.Comment: 5 pages, 4 figures, more detailed discussion of underlying physical effect, references update

Atom detection and photon production in a scalable, open, optical microcavity

A microfabricated Fabry-Perot optical resonator has been used for atom detection and photon production with less than 1 atom on average in the cavity mode. Our cavity design combines the intrinsic scalability of microfabrication processes with direct coupling of the cavity field to single-mode optical waveguides or fibers. The presence of the atom is seen through changes in both the intensity and the noise characteristics of probe light reflected from the cavity input mirror. An excitation laser passing transversely through the cavity triggers photon emission into the cavity mode and hence into the single-mode fiber. These are first steps towards building an optical microcavity network on an atom chip for applications in quantum information processing.Comment: 4 pages, 4 figures. A typographical error in the published paper has been corrected (equation of the corrected normalized variance, page 3, 2nd paragraph