36 research outputs found
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Vapor deposition of tantalum and tantalum compounds
Tantalum, and many of its compounds, can be deposited as coatings with techniques ranging from pure, thermal chemical vapor deposition to pure physical vapor deposition. This review concentrates on chemical vapor deposition techniques. The paper takes a historical approach. The authors review classical, metal halide-based techniques and current techniques for tantalum chemical vapor deposition. The advantages and limitations of the techniques will be compared. The need for new lower temperature processes and hence new precursor chemicals will be examined and explained. In the last section, they add some speculation as to possible new, low-temperature precursors for tantalum chemical vapor deposition
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Synthesis of ultrafine ceramic and metallic powders in a thermal argon rf plasma
Ultrafine powders of SiC, Si/sub 3/N/sub 4/, Ni, and Al/sub 2/O/sub 3/ have been prepared in a rf-plasma reactor, utilizing an induction plasma tube designed at Los Alamos. The primary particle size of the ceramic powders ranges from 5 to 50 nm. Silicon carbide and alumina are ultrapure crystalline powders, while silicon nitride is amorphous for surface areas greater than 100 m/sup 2//g. Plasma nickel powder will sinter to full density at 1073 K
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Improvement of luminescent properties of thin-film phosphors by excimer laser processing
Thin-films of europium doped yttrium oxide, (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3}, were deposited on sapphire substrates by metallorganic chemical vapor deposition. The films, {approximately} 400 nm thick, were weakly luminescent in the as-deposited condition. A KrF laser was pulsed once on the surface of the films at a fluence level between 0.9--2.3 J/cm{sup 2}. One pulse was sufficient to melt the film, which increased the photoluminescent emission intensity. Melting of a rough surface resulted in smoothing of the surface. The highest energy pulse resulted in a decrease in luminous intensity, presumably due to material removal. Computational modeling of the laser melting and ablation process predicted that a significant fraction of the film is removed by ablation at the highest fluence levels