A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links

We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises a vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier (TIA) integrated circuits (ICs) with four channels per die, which are adapted for a flip-chip assembly into a mid-board optics (MBO) optical transceiver module. The ICs are designed in the IHP 130 nm SiGe BiCMOS process (SG13RH) leveraging proven robustness in radiation environments and high-speed performance featuring bipolar transistors (HBTs) with fT/fMAX values of up to 250/340 GHz. Besides hardening by technology, radiation-hardened-by-design (RHBD) components are used, including enclosed layout transistors (ELTs) and digital logic cells. We report design features of the ICs and the module, and provide performance data from post-layout simulations. We present radiation evaluation data on analog devices and digital cells, which indicate that the transceiver ICs will reliably operate at typical total ionizing dose (TID) levels and single event latch-up thresholds found in geostationary satellites

Systematic Classification of LPCVD Processes

A simple classification scheme of low pressure chemical vapor deposition processes is discussed which is based on only three different one-dimensional models of the radial film thickness distribution on silicon wafers processed in a conventional horizontal hot-wall reactor. Comparing theoretical predictions of these models with experimental results obtained from various LPCVD processes, a good qualitative agreement can be stated. For better quantitative accuracy additional effects must be taken into account. The stoichiometrically induced radial flow for deposition reactions not preserving the mole number of involved gaseous species is very important for the parameter evaluation as well as model identification

Single-Chip Loesung fuer bandbreiteneffizientes drahtloses Kommunikationssystem Schlussbericht

Available from TIB Hannover: F04B1849+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung und Forschung (BMBF), Bonn (Germany)DEGerman

A Radiation Hardened 16 GS/s Arbitrary Waveform Generator IC for a Submillimeter Wave Chirp-Transform Spectrometer

This paper describes a radiation hardening design approach of a dual channel 16 GSps single chip arbitrary waveform generator (AWG) - a complex mixed-signal ASIC - that consists of a low phase noise 16 GHz PLL, two 1.6 Mbit SRAM blocks, two multiplexing chains, and two 4-bit DACs. The ASIC is dedicated to be a part of a submillimeter wave spectrometer that shall operate in deep-space environment. Under stringent power budget conditions, a selective radiation protection of the ASIC has been applied. The arbitrary waveform generator has been fabricated in a 130 nm SiGe BiCMOS process. Correct functionality has been verified in lab and will be further tested in an irradiation facility

A single chip 16 GS/s arbitrary waveform generator in 0.13 μm BiCMOS technology

This paper presents design considerations and measurements of a dual channel 16 GSps single chip arbitrary waveform generator. Each generator channel consists of a 1.6 Mbit SRAM block, a multiplexing chain, and a 4-bit DAC. A low phase noise 16 GHz PLL is integrated on the same chip. The prototype is designed to perform a lab experiment of a real-time SAW spectrometer. The overall power consumption of the chip is 1.45 W