Agriculture in Transformation: The Restructuring of Farm Enter in Central and Eastern European Countries during the Transition Process

Ten years of transition processes in the former communist countries of Central and Eastern Europe (CEEC) have changed the ownership structure as well as the structures and legal forms of enterprises in agriculture considerably. The farm structures in Eastern Europe developed under the influence of various collectivisation models. These influenced the course of the transformation process and therefore the development of new entrepreneurial and farm structures to a great extent. In addition also the effects of other political, social and economic factors with different weights can be noticed in the individual countries. Considering labour organisation and relation to markets, four different types of farm enterprises have evolved in the Central European and East European states during the transformation process: (a) Family farms for a mere self-sufficiency (Subsistence farms) (b) Family farms with a predominant orientation towards the market (c) Market-oriented joined family farms (d) Market-oriented farms with hired labour In the future farms and agricultural enterprises of all different types can have good prospects and therefore also the different sizes connected with them. For this reason the same should be valid for all types of farms and in the long term competition should decide, which types are going to compete. The preference or discrimination of a certain type by the agrarian policy needs to be avoided. The state also needs to develop the infrastructure in rural areas, to improve the prospects of farms that are deprived in this respect.Farm Management,

Selective lateral germanium growth for local GeOI fabrication

High quality local Germanium-on-oxide (GeOI) wafers are fabricated using selective lateral germanium (Ge) growth technique by a single wafer reduced pressure chemical vapor deposition system. Mesa structures of 300 nm thick epitaxial silicon (Si) interposed by SiO2 cap and buried oxide are prepared. HCl vapor phase etching of Si is performed prior to selective Ge growth to remove a part of the epitaxial Si to form cavity under the mesa. By following selective Ge growth, the cavity was filled. Cross section TEM shows dislocations of Ge which are located near Si / Ge interface only. By plan view TEM, it is shown that the dislocations in Ge which direct to SiO2 cap or to buried-oxide (BOX) are located near the interface of Si and Ge. The dislocations which run parallel to BOX are observed only in [110] and [1–10] direction resulting Ge grown toward [010] direction contains no dislocations. This mechanism is similar to aspect-ratio-trapping but here we are using a horizontal approach, which offers the option to remove the defective areas by standard structuring techniques. A root mean square of roughness of ∼0.2 nm is obtained after the SiO2 cap removal. Tensile strain in the Ge layer is observed due to higher thermal expansion coefficient of Ge compared to Si and SiO2

Atomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations

One of the main requirements for ultra-large-scale integrations (ULSIs) is atomic-order control of process technology. Our concept of atomically controlled processing is based on atomic-order surface reaction control by CVD. By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high-quality low-temperature epitaxial growth of Si1−xGex (100) (x=0–1) with atomically flat surfaces and interfaces on Si(100) is achieved. Self-limiting formation of 1–3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si1-xGex (100) are generalized based on the Langmuir-type model. By the Si epitaxial growth on top of the material already-formed on Si(100), N, B and C atoms are confined within about a 1 nm thick layer. In Si cap layer growth on the P atomic layer formed on Si1−xGex (100), segregation of P atoms is suppressed by using Si2H6 instead of SiH4 at a low temperature of 450 °C. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the Si1−xGex/Si heterointerface. It is confirmed that higher carrier concentration and higher carrier mobility are achieved by atomic-layer doping. These results open the way to atomically controlled technology for ULSIs