The mechanism of word satiation in Tibetan reading: Evidence from eye movements

Two eye-tracking experiments were used to investigate the mechanism of word satiation in Tibetan reading. The results revealed that, at a low repetition level, gaze duration and total fixation duration in the semantically unrelated condition were significantly longer than in the semantically related condition; at a medium repetition level, reaction time in the semantically related condition was significantly longer than in the semantically unrelated condition; at a high repetition level, the total fixation duration and reaction time in the semantically related condition were significantly longer than in the semantically unrelated condition. However, fixation duration and reaction time showed no significant difference between the similar and dissimilar orthography at any repetition level. These findings imply that there are semantic priming effects in Tibetan reading at a low repetition level, but semantic satiation effects at greater repetition levels, which occur in the late stage of lexical processing

Support Strength Criteria and Intelligent Design of Underground Powerhouses

The proper design of underground powerhouse support is the key engineering technique to guarantee the safe construction and operation of underground works. By regression analysis of the surrounding rock support parameters of 29 underground powerhouses with a span of 18.0–34.0 m, the empirical formula of the relationship between the support strength of anchor bar, strength-stress ratio, and plant span and the relationship among the support strength of the anchor cable, strength-stress ratio, and plant span are proposed. Furthermore, an intelligent design model for the anchor support of the underground powerhouse was trained by a BP (back propagation) neural network. Research shows that the support strength index of the anchor bolt and the anchor cable of these 29 plants are all distributed around 1.0. Therefore, a support strength index of 0.8–1.2 can be used as a reference for practical engineering support design. Finally, the reliability of the intelligent design model for the anchor support of the underground powerhouse was verified by comparison with actual engineering and support strength index. This shows that the intelligent design model can provide a reference for engineering design and construction

Simulation of the Irradiation Cascade Effect of 6H-SiC Based on Molecular Dynamics Principles

When semiconductor materials are exposed to radiation fields, cascade collision effects may form between the radiation particles in the radiation field and the lattice atoms in the target material, creating irradiation defects that can lead to degradation or failure of the performance of the device. In fact, 6H-SiC is one of the typical materials for third-generation broadband semiconductors and has been widely used in many areas of intense radiation, such as deep space exploration. In this paper, the irradiation cascade effect between irradiated particles of different energies in the radiation and lattice atoms in 6H-SiC target materials is simulated based on the molecular dynamics analysis method, and images of the microscopic trajectory evolution of PKA and SKA are obtained. The recombination rates of the Frenkel pairs were calculated at PKA energies of 1 keV, 2 keV, 5 keV, and 10 keV. The relationship between the number of defects, the spatial distribution pattern of defects, and the clustering of defects in the irradiation cascade effect of 6H-SiC materials with time and the energy of PKA are investigated. The results show that the clusters are dominated by vacant clusters and are mainly distributed near the trajectories of the SKA. The number and size of vacant clusters, the number of Frenkel pairs, and the intensity of cascade collisions of SKAs are positively correlated with the magnitude of the energy of the PKA. The recombination rate of Frenkel pairs is negatively correlated with the magnitude of the energy of PKA

Conservation Tillage Technology: A Study on the Duration from Awareness to Adoption and Its Influencing Factors—Based on the Survey of the Yellow River Basin in China

Studying the dynamic duration of technology adoption helps farmers weigh and select different attributes and stages of conservation tillage techniques. In this study, non-parametric K-M survival analysis and discrete duration models were employed to estimate the time taken by farmers in the Yellow River Basin region to transition from awareness to the adoption of conservation tillage techniques between 2002 and 2020. The results indicate (1) The duration from awareness to adoption of conservation tillage technology is relatively short. (2) The likelihood of farmers postponing adoption decisions is highest in the initial 10 years and gradually decreases over time, suggesting negative time dependency. (3) Controlling for proportional hazards assumptions, it was found that factors such as education level and social learning positively influence the duration from awareness to adoption of conservation tillage techniques. Extreme weather variations and household labor migration delay the adoption time for farmers. In the process of promoting and implementing conservation tillage techniques, it is essential to consider the issue of intertemporal technology choice, stimulate farmers’ intrinsic demand, shorten the time interval from awareness to adoption, and ultimately improve technology adoption rates

Experimental Study on Critical Parameters Degradation of Nano PDSOI MOSFET under TDDB Stress

In today’s digital circuits, Si-based MOS devices have become the most widely used technology in medical, military, aerospace, and aviation due to their advantages of mature technology, high performance, and low cost. With the continuous integration of transistors, the characteristic size of MOSFETs is shrinking. Time-dependent dielectric electrical breakdown (TDDB) is still a key reliability problem of MOSFETs in recent years. Many researchers focus on the TDDB life of advanced devices and the mechanism of oxide damage, ignoring the impact of the TDDB effect on device parameters. Therefore, in this paper, the critical parameters of partially depleted silicon-on-insulator (PDSOI) under time-dependent dielectric electrical breakdown (TDDB) stress are studied. By applying the TDDB acceleration stress experiment, we obtained the degradation of the devices’ critical parameters including transfer characteristic curves, threshold voltage, off-state leakage current, and the TDDB lifetime. The results show that TDDB acceleration stress will lead to the accumulation of negative charge in the gate oxide. The negative charge affects the electric field distribution. The transfer curves of the devices are positively shifted, as is the threshold voltage. Comparing the experimental data of I/O and Core devices, we can conclude that the ultra-thin gate oxide device’s electrical characteristics are barely affected by the TDDB stress, while the opposite is true for a thick-gate oxide device

A simple method to improve the dissolution of repaglinide and exploration of its mechanism

In the present study, a simple and rapid method was developed to improve the in vitro dissolution of repaglinide, an oral antidiabetic drug, which was based on addition of meglumine in 50% (v/v) ethanol to dissolve repaglinide, and the drug dissolved in meglumine/50% ethanol was used directly with a binder to prepare tablets. The mechanism of solubilization of repaglinide by meglumine was studied by using infrared spectrum (IR), ultraviolet (UV) measurement through dual wavelength, differential scanning calorimetry (DSC) and X-ray powder diffraction methods. Dissolution tests of repaglinide tablets were performed in the media with different pH values and the repaglinide concentrations were analyzed by High Performance Liquid Chromatography (HPLC) method. The solubility data showed that with the meglumine concentration increasing, the solubility of repaglinide was increased. Meanwhile, tablets with the molar ratio of repaglinide and meglumine 1:2 (n/n) resulted in a significant increase in dissolution compared to the repaglinide tablets without using meglumine, and nearly equal to the commercial preparations of NovoNorm®, which concluded that meglumine had a great role in promoting the dissolution of repaglinide. The results of IR and UV dual wavelength methods suggested the formation of repaglinide–meglumine (REP–MEG) molecular complex. DSC results showed that the melting peak of repaglinide disappeared in the REP–MEG coprecipitate, which indicated that repaglinide was stable when existing at amorphous or molecular state. The experiment of X-ray powder diffraction showed that with the solubilization of meglumine, the crystal diffraction peak of repaglinide disappeared, which further inferred that repaglinide was formed complexes with meglumine. It was demonstrated that the method of improving repaglinide with meglumine was reliable and could be suitable for repaglinide tablets production in industry. This study also provides a feasible way to enhance the dissolution of drugs with low solubility, which will be leading to improved bioavailability of these drugs

Examining the extraction of parafoveal semantic information in Tibetan.

This study conducted two experiments to investigate the extraction of semantic preview information from the parafovea in Tibetan reading. In Experiment 1, a single-factor (preview type: identical vs. semantically related vs. unrelated) within-subject experimental design was used to investigate whether there is a parafoveal semantic preview effect (SPE) in Tibetan reading. Experiment 2 used a 2 (contextual constraint: high vs. low) × 3 (preview type: identical vs. semantically related vs. unrelated) within-subject experimental design to investigate the influence of contextual constraint on the parafoveal semantic preview effect in Tibetan reading. Supporting the E-Z reader model, the experimental results showed that in Tibetan reading, readers could not obtain semantic preview information from the parafovea, and contextual constraint did not influence this process. However, comparing high- and low-constrained contexts, the latter might be more conducive to extracting semantic preview information from the parafovea

Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs

The coupling effect of negative bias temperature instability (NBTI) and total ionizing dose (TID) was investigated by simulation based on the fully depleted silicon on insulator (FDSOI) PMOS. After simulating the situation of irradiation after NBT stress, it was found that the NBTI effect weakens the threshold degradation of FDSOI PMOS under irradiation. Afterward, NBT stress was decomposed into high gate voltage stress and high-temperature stress, which was applied to the device simultaneously with irradiation. The devices under high gate voltage exhibited more severe threshold voltage degradation after irradiation compared to those under low gate voltage. Devices at high temperatures also exhibit more severe threshold degradation after irradiation compared to devices under low temperatures. Finally, the simultaneous effect of high gate voltage, high temperature, and irradiation on the device was investigated, which fully demonstrated the impact of the NBT stress on the TID effect, resulting in far more severe threshold voltage degradation

Seawater carbonate chemistry and growth, net photosynthesis rate, Chlorophyll fluorescence parameter, soluble protein, photosynthetic pigments of red algae Pyropia yezoensis

Increasing CO2 levels in the surface water of oceans are expected to decrease oceanic pH and lead to seawater acidification. The responses of macroalgaea to this acidification of coastal waters have been studied in detail; however, most reports have focused on the adult stage only, while ignoring other life cycle stages. In this study, the economically important seaweed species Pyropia yezoensis was cultured under two CO2 concentrations (ambient CO2: 400 μatm; elevated CO2: 1000 μatm) and two light intensities (low light intensity: 80 μmol photons/m**2 /s; and high light intensity: 240 μmol photons/m**2 /s). The effects on the growth and photosynthetic performance of P. yezoensis were explored at different life cycle stages. Relative growth rates were significantly elevated at the conchocelis stage under high light intensity and elevated CO2 concentration. Moreover, the Pmax of P. yezoensis was also increased under high light intensity. However, this positive effect inversed at the thallus stage. The relative growth rate, relative electron transport rate (rETR), and net photosynthetic rate decreased at the thallus stage in response to high CO2 concentration. Under low light intensity, elevated CO2 concentration significantly increased the relative growth rates of conchocelis and thallus stages. These were 269% and 45% higher at elevated CO2 concentration compared with ambient CO2 concentrations, respectively. The Chl a and phycoerythrin levels were also higher under elevated CO2 level at the conchocelis stage. However, the rETR for the thallus stage was elevated under low light. This suggests that seawater acidification could positively affect algae at low light conditions (especially at the conchocelis stage). Different growth stages of P. yezoensis may respond differently to seawater acidification and changes of light intensity. Thalli growth stage, stocking density, and seawater depth should be considered in different areas to optimize the primary production of macroalgae

Polarization Gradient Effect of Negative Capacitance LTFET

In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO2) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD. Compared with the conventional LTFET, a steeper subthreshold swing (SS = 18.4 mV/dec) of NC-LTFET is obtained by the mechanism of line tunneling at low gate voltage instead of diagonal tunneling, which is caused by the non-uniform voltage across the gate oxide layer. In addition, we report the polarization gradient effect in a negative capacitance TFET for the first time. It is noted that the polarization gradient effect should not be ignored in TFET. When the polarization gradient parameter g grows larger, the dominant tunneling mechanism that affects the SS is the diagonal tunneling. The on-state current (Ion) and SS of NC-LTFET become worse