Impact of Si nanocrystals in a-SiOx<Er> in C-Band emission for applications in resonators structures

Si nanocrystals (Si-NC) in a-SiOx were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be due to less efficient energy transfer processes from the nanocrystals than from the amorphous matrix to the Er3+ ions, perhaps due to the formation of more centro-symmetric Er3+ sites at the nanocrystal surfaces or to very different optimal erbium concentrations between amorphous and crystallized samples.Comment: 3 pages, 4 figure

Full-field strain reconstruction using uniaxial strain measurements: Application to damage detection

This work investigates the inverse problem of reconstructing the continuous displacement field of a structure using a spatially distributed set of discrete uniaxial strain data. The proposed technique is based on the inverse Finite Element Method (iFEM), which has been demonstrated to be suitable for full-field displacement, and subsequently strain, reconstruction in beam and plate structures using discrete or continuous surface strain measurements. The iFEM uses a variationally based approach to displacement reconstruction, where an error functional is discretized using a set of finite elements. The effects of position and orientation of uniaxial strain measurements on the iFEM results are investigated, and the use of certain strain smoothing strategies for improving reconstruction accuracy is discussed. Reconstruction performance using uniaxial strain data is examined numerically using the problem of a thin plate with an internal crack. The results obtained highlight that strain field reconstruction using the proposed strategy can provide useful information regarding the presence, position, and orientation of damage on the plate

Environment of Er in a-Si:H: co-sputtering versus ion implantation

We report a comparative Extended X-Ray Fine Structure (EXAFS) study of Er in a-Si:H prepared by Er implantation in a-Si:H and by co-sputtering undergoing the same cumulative annealing processes. It was found that the Er environment in as-implanted samples is formed by Si atoms, which are replaced by oxygen under annealing. In the co-sputtered samples, the initial low coordination oxygen environment evolves under thermal treatment to an Er2O3 -like neighborhood.756759Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq

Resonant structures based on amorphous silicon sub-oxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nm

We present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon sub-oxide doped with Er3+ (a-SiOx) layers with silicon nanoclusters (Si-NC). Two distinct techniques were combined to provide a structure that allowed increasing approximately 12x the 1550nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx matrix was deposited by reactive RF co-sputtering. Secondly, an extra pump channel (4I15/2 to 4I9/2) of Er3+ was created due to Si-NC formation on the same a-SiOx matrix via a hard annealing at 1150 C. The SiO2 and the a-SiOx thicknesses were designed to support resonances near the pumping wavelength (~500nm), near the Si-NC emission (~800nm) and near the a-SiOx emission (~1550nm) enhancing the optical pumping process.Comment: 14 pages, 4 figures, in submissio

Tramadol hydro­chloride–benzoic acid (1/1)

In the cation of the title co-crystal salt {systematic name: [2-hydroxy-2-(3-meth­oxy­phen­yl)cyclo­hexyl­meth­yl]dimethyl­aza­nium chloride–benzoic acid (1/1)}, C16H31NO2 +·Cl−·C7H6O2, the N atom is protonated and the six-membered cyclo­hexane ring adopts a slightly distorted chair conformation. The dihedral angle between the mean planes of the benzene rings in the cation and the benzoic acid mol­ecule is 75.5 (9)°. The crystal packing is stabilized by weak inter­molecular O—H⋯Cl, N—H⋯Cl and C—H⋯π inter­actions, forming a two-dimensional chain network along the b axis. The benzoic acid mol­ecule is not involved in the usual head-to-tail dimer bonding, but instead is linked to the ammonium cation through mutual hydrogen-bonding inter­actions with the chloride anion

Mesoscopic Cooperative Emission From a Disordered System

We study theoretically the cooperative light emission from a system of $N\gg 1$ classical oscillators confined within a volume with spatial scale, $L$, much smaller than the radiation wavelength, $\lambda_0=2\pi c/\omega_0$. We assume that the oscillators frequencies are randomly distributed around a central frequency, $\omega_0$, with some characteristic width, $\Omega\ll\omega_0$. In the absence of disorder, that is $\Omega=0$, the cooperative emission spectrum is composed of a narrow subradiant peak superimposed on a wide superradiant band. When $\Omega\neq 0$, we demonstrate that if $N$ is large enough, the subradiant peak is not simply broadened by the disorder but rather splits into a system of random narrow peaks. We estimate the spectral width of these peaks as a function of $N, L, \Omega$, and $\lambda_0$. We also estimate the amplitude of this mesoscopic structure in the emission spectrum.Comment: 25 pages including 6 figure

Theory of excited state absorptions in phenylene-based π\pi-conjugated polymers

Within a rigid-band correlated electron model for oligomers of poly-(paraphenylene) (PPP) and poly-(paraphenylenevinylene) (PPV), we show that there exist two fundamentally different classes of two-photon A$_g$ states in these systems to which photoinduced absorption (PA) can occur. At relatively lower energies there occur A$_g$ states which are superpositions of one electron - one hole (1e--1h) and two electron -- two hole (2e--2h) excitations, that are both comprised of the highest delocalized valence band and the lowest delocalized conduction band states only. The dominant PA is to one specific member of this class of states (the mA$_g$). In addition to the above class of A$_g$ states, PA can also occur to a higher energy kA$_g$ state whose 2e--2h component is {\em different} and has significant contributions from excitations involving both delocalized and localized bands. Our calculated scaled energies of the mA$_g$ and the kA$_g$ agree reasonably well to the experimentally observed low and high energy PAs in PPV. The calculated relative intensities of the two PAs are also in qualitative agreement with experiment. In the case of ladder-type PPP and its oligomers, we predict from our theoretical work a new intense PA at an energy considerably lower than the region where PA have been observed currently. Based on earlier work that showed that efficient charge--carrier generation occurs upon excitation to odd--parity states that involve both delocalized and localized bands, we speculate that it is the characteristic electronic nature of the kA$_g$ that leads to charge generation subsequent to excitation to this state, as found experimentally.Comment: Revtex4 style, 2 figures inserted in the text, three tables, 10 page