Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers

Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effect of point defects inevitably present in mechanically exfoliated hBN on the tunnel magnetoresistance of Co-hBN-NiFe MTJs. We observe a clear enhancement of both the conductance and magnetoresistance of the junction at well-defined bias voltages, indicating resonant tunneling through magnetic (spin-polarized) defect states. The spin polarization of the defect states is attributed to exchange coupling of a paramagnetic impurity in the few-atomic-layer thick hBN to the ferromagnetic electrodes. This is confirmed by excellent agreement with theoretical modelling. Our findings should be taken into account in analyzing tunneling processes in hBN-based magnetic devices. More generally, our study shows the potential of using atomically thin hBN barriers with defects to engineer the magnetoresistance of MTJs and to achieve spin filtering, opening the door towards exploiting the spin degree of freedom in current studies of point defects as quantum emitters

Dusty star forming galaxies at high redshift

The global star formation rate in high redshift galaxies, based on optical surveys, shows a strong peak at a redshift of z=1.5, which implies that we have already seen most of the formation. High redshift galaxies may, however, emit most of their energy at submillimeter wavelengths if they contain substantial amounts of dust. The dust would absorb the starlight and reradiate it as far-infrared light, which would be redshifted to the submillimeter range. Here we report a deep survey of two blank regions of sky performed at submillimeter wavelengths (450 and 850-micron). If the sources we detect in the 850-micron band are powered by star formation, then each must be converting more than 100 solar masses of gas per year into stars, which is larger than the maximum star formation rates inferred for most optically-selected galaxies. The total amount of high redshift star formation is essentially fixed by the level of background light, but where the peak occurs in redshift for the submillimeter is not yet established. However, the background light contribution from only the sources detected at 850-micron is already comparable to that from the optically-selected sources. Establishing the main epoch of star formation will therefore require a combination of optical and submillimeter studies.Comment: 10 pages + 2 Postscript figures, under embargo at Natur

Atomistic defect states as quantum emitters in monolayer MoS2_2

Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum device technologies. The ability to tailor quantum emission through deterministic defect engineering is of growing importance for realizing scalable quantum architectures. However, a major difficulty is that defects need to be positioned site-selectively within the solid. Here, we overcome this challenge by controllably irradiating single-layer MoS$_{2}$ using a sub-nm focused helium ion beam to deterministically create defects. Subsequent encapsulation of the ion bombarded MoS$_{2}$ flake with high-quality hBN reveals spectrally narrow emission lines that produce photons at optical wavelengths in an energy window of one to two hundred meV below the neutral 2D exciton of MoS$_{2}$. Based on ab-initio calculations we interpret these emission lines as stemming from the recombination of highly localized electron-hole complexes at defect states generated by the helium ion bombardment. Our approach to deterministically write optically active defect states in a single transition metal dichalcogenide layer provides a platform for realizing exotic many-body systems, including coupled single-photon sources and exotic Hubbard systems.Comment: Main: 9 pages, 3 figures + SI: 19 pages, 10 figure

Extended High-Ionization Nuclear Emission-Line Region in the Seyfert Galaxy NGC 4051

We present an optical spectroscopic analysis of the well-known Seyfert galaxy NGC 4051. The high-ionization nuclear emission-line region (HINER) traced by [Fe X]6374 is found to be spatially extended to a radius of 3a rcseconds (150 pc) west and southwest from the nucleus; NGC 4051 is the third example which has an extended HINER. The nuclear spectrum shows that the flux of [Fe X]6374 is stronger than that of [Fe VII] 6087 in our observation. This property cannot be interpreted in terms of a simple one-zone photoionization model. In order to understand what happens in the nuclear region in NGC 4051, we investigate the physical condition of the nuclear emission-line region in detail using new photoionization models in which the following three emission-line components are taken into account; (1) optically thick, ionization-bounded clouds; (2) optically thin, matter-bounded clouds; and (3) a contamination component which emits H$\alpha$ and H$\beta$ lines. Here the observed extended HINER is considered to be associated with the low-density, matter-bounded clouds. Candidates of the contamination component are either the broad-line region (BLR) or nuclear star forming regions or both. The complexity of the excitation condition found in NGC 4051 can be consistently understood if we take account of these contamination components.Comment: 16 pages, including figures. To Appear in the Astronomical Journal February 2000 Issu

Conductance and density of states as the Kramers-Kronig dispersion relation

By applying the Kramers-Kronig dispersion relation to the transmission amplitude a direct connection of the conductance with the density of states is given in quantum scattering systems connected to two one-channel leads. Using this method we show that in the Fano resonance the peak position of the density of states is generally different from the position of the corresponding conductance peak, whereas in the Breit-Wigner resonance those peak positions coincide. The lineshapes of the density of states are well described by a Lorentz type in the both resonances. These results are verified by another approach using a specific form of the scattering matrix to describe scattering resonances.Comment: 9 pages, 4 figure

Magnetotunneling spectroscopy of mesoscopic correlations in two-dimensional electron systems

An approach to experimentally exploring electronic correlation functions in mesoscopic regimes is proposed. The idea is to monitor the mesoscopic fluctuations of a tunneling current flowing between the two layers of a semiconductor double-quantum-well structure. From the dependence of these fluctuations on external parameters, such as in-plane or perpendicular magnetic fields, external bias voltages, etc., the temporal and spatial dependence of various prominent correlation functions of mesoscopic physics can be determined. Due to the absence of spatially localized external probes, the method provides a way to explore the interplay of interaction and localization effects in two-dimensional systems within a relatively unperturbed environment. We describe the theoretical background of the approach and quantitatively discuss the behavior of the current fluctuations in diffusive and ergodic regimes. The influence of both various interaction mechanisms and localization effects on the current is discussed. Finally a proposal is made on how, at least in principle, the method may be used to experimentally determine the relevant critical exponents of localization-delocalization transitions.Comment: 15 pages, 3 figures include

Disorder Effect on the Vortex Pinning by the Cooling Process Control in the Organic Superconductor κ\kappa-(BEDT-TTF)2_2Cu[N(CN)2_2]Br

We investigate the influence of disorders in terminal ethylene groups of BEDT-TTF molecules (ethylene-disorders) on the vortex pinning of the organic superconductor $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br. Magnetization measurements are performed under different cooling-processes. The second peak in the magnetization hysteresis curve is observed for all samples studied, and the hysteresis width of the magnetization becomes narrower by cooling faster. In contradiction to the simple pinning effect of disorder, this result shows the suppression of the vortex pinning force by introducing more ethylene-disorders. The ethylene-disorder domain model is proposed for explaining the observed result. In the case of the system containing a moderate number of the ethylene-disorders, the disordered molecules form a domain structure and it works as an effective pinning site. On the contrary, an excess number of the ethylene-disorders may weaken the effect of the domain structure, which results in the less effective pinning force on the vortices.Comment: 6 pages, 6 figure

Exceptionally large migration length of carbon and topographically-facilitated self-limiting molecular beam epitaxial growth of graphene on hexagonal boron nitride

This is the author accepted manuscript. The final version is available from the publisher via the DOI in this record.Available online 18 December 2016We demonstrate growth of single-layer graphene (SLG) on hexagonal boron nitride (h-BN) by molecular beam epitaxy (MBE), only limited in area by the finite size of the h-BN flakes. Using atomic force microscopy and micro-Raman spectroscopy, we show that for growth over a wide range of temperatures (500◦C – 1000◦C) the deposited carbon atoms spill off the edge of the h-BN flakes. We attribute this spillage to the very high mobility of the carbon atoms on the BN basal plane, consistent with van der Waals MBE. The h-BN flakes vary in size from 30 µm to 100 µm, thus demonstrating that the migration length of carbon atoms on h-BN is greater than 100 µm. When sufficient carbon is supplied to compensate for this loss, which is largely due to this fast migration of the carbon atoms to and off the edges of the h-BN flake, we find that the best growth temperature for MBE SLG on h-BN is ∼950◦C. Self-limiting graphene growth appears to be facilitated by topographic h-BN surface features: We have thereby grown MBE self-limited SLG on an h-BN ridge. This opens up future avenues for precisely tailored fabrication of nano- and hetero-structures on pre-patterned h-BN surfaces for device applications.This work is supported by ONR (N000140610138 and Graphene MURI), AFOSR (FA9550-11-1-0010), EFRC Center for Re-Defining Photovoltaic Efficiency through Molecule Scale Control (award DE-SC0001085), NSF (CHE-0641523), NYSTAR and Spanish Government (AIC-B-2011-0806, MAT2014-54231, MAT2015-67021-R). S.W. and A.P. were supported by the US Department of Energy Office of Science, Division of Materials Science and Engineering (award DE-SC0010695)

Onsager-Machlup theory and work fluctuation theorem for a harmonically driven Brownian particle

We extend Tooru-Cohen analysis for nonequilirium steady state(NSS) of a Brownian particle to nonequilibrium oscillatory state (NOS) of Brownian particle by considering time dependent external drive protocol. We consider an unbounded charged Brownian particle in the presence of an oscillating electric field and prove work fluctuation theorem, which is valid for any initial distribution and at all times. For harmonically bounded and constantly dragged Brownian particle considered by Tooru and Cohen, work fluctuation theorem is valid for any initial condition(also NSS), but only in large time limit. We use Onsager-Machlup Lagrangian with a constraint to obtain frequency dependent work distribution function, and describe entropy production rate and properties of dissipation functions for the present system using Onsager-Machlup functional.Comment: 6 pages, 1 figur

Statistical Properties of Level Widths and Conductance Peaks in a Quantum Dot

We study the statistics of level widths of a quantum dot with extended contacts in the absence of time-reversal symmetry. The widths are determined by the amplitude of the wavefunction averaged over the contact area. The distribution function of level widths for a two-point contact is evaluated exactly. The distribution resembles closely the result obtained when the wavefunction fluctuates independently at each point, but differs from the one-point case. Analytical calculations and numerical simulations show that the distribution for many-point contacts has a power-law behavior at small level widths. The exponent is given by the number of points in the lead and diverges in the continuous limit. The distribution of level widths is used to determine the distribution of conductance peaks in the resonance regime. At intermediate temperatures, we find that the distribution tends to normal and fluctuations in the height of the peaks are suppressed as the lead size is increased.Comment: 13 pages, RevTeX 3, six uuencoded postscript figures, CMT-ERM-940