845 research outputs found

    Nonadiabatic quantum pumping in mesoscopic nanostructures

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    We consider a nonadiabatic quantum pumping phenomena in a ballistic narrow constriction. The pumping is induced by a potential that has both spatial and temporal periodicity characterized by KK and Ω\Omega. In the zero frequency (Ω=0\Omega=0) limit, the transmission through narrow constriction exhibits valley structures due to the opening up of energy gaps in the pumping region -- a consequence of the KK periodicity. These valley structures remain robust in the regime of finite Ω\Omega, while their energies of occurrence are shifted by about Ω/2\hbar\Omega/2. The direction of these energy shifts depend on the directions of both the phase-velocity of the pumping potential and the transmitting electrons. This frequency dependent feature of the valley structures gives rise to both the asymmetry in the transmission coefficients and the pumping current. An experimental setup is suggested for a possible observation of our nonadiabatic quantum pumping findings.Comment: 4 pages, 2 figure

    Transport spectroscopy in a time-modulated open quantum dot

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    We have investigated the time-modulated coherent quantum transport phenomena in a ballistic open quantum dot. The conductance GG and the electron dwell time in the dots are calculated by a time-dependent mode-matching method. Under high-frequency modulation, the traversing electrons are found to exhibit three types of resonant scatterings. They are intersideband scatterings: into quasibound states in the dots, into true bound states in the dots, and into quasibound states just beneath the subband threshold in the leads. Dip structures or fano structures in GG are their signatures. Our results show structures due to 2ω\hbar\omega intersideband processes. At the above scattering resonances, we have estimated, according to our dwell time calculation, the number of round-trip scatterings that the traversing electrons undertake between the two dot openings.Comment: 8 pages, 5 figure

    Coherent quantum transport in the presence of a finite-range transversely polarized time-dependent field

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    This work investigates the quantum transport in a narrow constriction acted upon by a finite-range transversely polarized time-dependent electric field. A generalized scattering-matrix method is developed that has incorporated a time-dependent mode-matching scheme. The transverse field induces coherent inelastic scatterings that include both intersubband and intersideband transitions. These scatterings give rise to the dc conductance GG a general suppressed feature that escalates with the chemical potential. In addition, particular suppressed features -- the dip structures -- are found in GG. These features are recognized as the quasi-bound-state (QBS) features that arise from electrons making intersubband transitions to the vicinity of a subband bottom. For the case of larger field intensities, the QBS features that involve more photons are more evident. These QBS features are closely associated with the singular density of states at the subband bottoms. An experimental setup is proposed for the observation of these features.Comment: 8 pages, 4 figure

    Differential conductance of a saddle-point constriction with a time-modulated gate-voltage

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    The effect of a time-modulated gate-voltage on the differential conductance GG of a saddle-point constriction is studied. The constriction is modeled by a symmetric saddle-point potential and the time-modulated gate-voltage is represented by a potential of the form V0θ(a/2xxc)cos(ωt)V_{0} \theta(a/2-|x-x_{c}|) \cos (\omega t). For ω\hbar\omega less than half of the transverse subband energy level spacing, gate-voltage-assisted (suppressed) feature occurs when the chemical potential μ\mu is less (greater) than but close to the threshold energy of a subband. As μ\mu increases, GG is found to exhibit, alternatively, the assisted and the suppressed feature. For larger ω\hbar\omega, these two features may overlap with one another. Dip structures are found in the suppressed regime. Mini-steps are found in the assisted regime only when the gate-voltage covers region far enough away from the center of the constriction.Comment: 8 pages, 6 figure
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