Knowledge and Attitudes about HIV/AIDS among Homoeopathic Practitioners and Educators in India

This study is designed to assess AIDS knowledge among Homeopathy educators and physicians in India, which has not been evaluated previously. India now has the largest number of HIV infected persons worldwide, with an estimated cumulative 5.1 million infections. Homeopathy is the dominant system among the nationally-recognized alternative or complementary systems of medicine, which collectively provide health care to around 600 million people in India. Homeopathy, with its holistic and patient-centered approach, has a wide reach to people at risk of contracting human immunodeficiency virus (HIV). Participants were 68 homeopathy physicians (34 educators and 34 practitioners) who completed a CDC questionnaire measuring HIV/AIDS Knowledge regarding AIDS. This study reports the current level of knowledge of, and attitudes about, HIV/AIDS among homeopathy educators and practitioners. These findings will assist in the development of an education module to equip homeopathic health care personnel to impart accurate AIDS information and prevention counseling to their patients in an efficient manner

Développement et caractérisation d’une technique d’interconnexion verticale de puces

With the constant demand for reducing the feature size of transistors and that of the devices, which is guided by Moore’s law, 2D integration is no longer fit to adapt the growing demand. This has led to 3D integration of active devices with the help of Cu/Ni pillars capped with Sn based solder alloys. In the coming years, applications which demand high density interconnects (optoelectronic, microdisplays, IR-detectors, MEMS) will require an interconnect pitch of 10 µm and below. However, Cu/Ni/solder pillars have never been investigated in depth for such a small interconnection pitch. With reduction of interconnect dimension, the diameter of Cu/Ni pillar and solder alloy also reduces. Thus, it is feared that the intermetallic formation, which is the key phenomenon responsible for the bonding, may be problematic due to the reduction in size of Cu pillar capped with solder alloy.The thesis is dedicated to the metallurgical study and its characterization for very small interconnects (5 µm) at 10 µm pitch, where the main focus is given on the physio-chemical mechanisms of soldering between Sn-Ag solder alloy and Ni or Ni/Au layers. For the first time, the mechanism of solid-state interactions between Sn and Ni is studied in depth and also for the first time the Ni3Sn4 SLID (Solid-Liquid-lnterdiffusion) system as an interconnect has been investigated at these dimensions. Moreover, the mechanical and electrical properties as well as the thermal stability of these interconnects are studied. Interestingly, during the latter part of this study, Ni3Sn2 layer is observed during aging of the Ni/Ni3Sn4 system for low temperature (200°C).Suite à la demande constante de réduire la taille des transistors et celle des dispositifs électroniques, guidée par la loi de Moore, l'intégration 2D n'est plus adaptée à cette demande croissante. Cela a conduit à l'intégration 3D des dispositifs actifs à l'aide de piliers Cu/Ni recouverts d'alliages de brasage à base de Sn. Dans les années à venir, les applications qui demandent des interconnexions à haute densité (optoélectroniques, microdisplays, les détecteurs IR, MEMS) nécessiteront l’utilisation de pas d'interconnexions inférieurs à 10 µm. Cependant, les piliers Cu/Ni/alliage de brasure base Sn n'ont jamais été étudiés en profondeur pour un si petit pas d'interconnexion. Avec la réduction de la dimension d'interconnexion, le diamètre des piliers Cu/Ni/alliage de brasure est réduit également. De ce fait, la formation des intermétalliques, qui joue un rôle primordial dans la bonne tenue de la jonction, peut poser des problèmes majeurs en raison de la réduction des dimensions du pilier de Cu et de l’alliage de brasure.Le travail de cette thèse est consacré à l'étude métallurgique et à la caractérisation d’interconnections de très petites dimensions (diamètre de 5 µm et pas de 10 µm) avec comme objectif principal l’étude des mécanismes physicochimiques des interactions entre les alliages de soudure Sn-Ag et les couches de Ni ou Ni/Au. Les mécanismes des interactions à l'état solide entre Sn et Ni ainsi que l’évolution du joint vers la transformation totale en intermétallique Ni3Sn4 (Solid-Liquid-Intercondiffusion - SLID processus), ont été étudiés pour la première fois dans de tels systèmes de dimensions micrométriques. De plus, les propriétés mécaniques et électriques ainsi que la stabilité thermique de ces interconnexions ont été étudiées. L’observation pour la première fois de la formation de la phase Ni3Sn2 à l’interface Ni/Sn à 200°C lors des vieillissements thermiques présente un intérêt pratique de grande importance

Development of ultra fine pitch array INTERCONNECTION

Suite à la demande constante de réduire la taille des transistors et celle des dispositifs électroniques, guidée par la loi de Moore, l'intégration 2D n'est plus adaptée à cette demande croissante. Cela a conduit à l'intégration 3D des dispositifs actifs à l'aide de piliers Cu/Ni recouverts d'alliages de brasage à base de Sn. Dans les années à venir, les applications qui demandent des interconnexions à haute densité (optoélectroniques, microdisplays, les détecteurs IR, MEMS) nécessiteront l’utilisation de pas d'interconnexions inférieurs à 10 µm. Cependant, les piliers Cu/Ni/alliage de brasure base Sn n'ont jamais été étudiés en profondeur pour un si petit pas d'interconnexion. Avec la réduction de la dimension d'interconnexion, le diamètre des piliers Cu/Ni/alliage de brasure est réduit également. De ce fait, la formation des intermétalliques, qui joue un rôle primordial dans la bonne tenue de la jonction, peut poser des problèmes majeurs en raison de la réduction des dimensions du pilier de Cu et de l’alliage de brasure.Le travail de cette thèse est consacré à l'étude métallurgique et à la caractérisation d’interconnections de très petites dimensions (diamètre de 5 µm et pas de 10 µm) avec comme objectif principal l’étude des mécanismes physicochimiques des interactions entre les alliages de soudure Sn-Ag et les couches de Ni ou Ni/Au. Les mécanismes des interactions à l'état solide entre Sn et Ni ainsi que l’évolution du joint vers la transformation totale en intermétallique Ni3Sn4 (Solid-Liquid-Intercondiffusion - SLID processus), ont été étudiés pour la première fois dans de tels systèmes de dimensions micrométriques. De plus, les propriétés mécaniques et électriques ainsi que la stabilité thermique de ces interconnexions ont été étudiées. L’observation pour la première fois de la formation de la phase Ni3Sn2 à l’interface Ni/Sn à 200°C lors des vieillissements thermiques présente un intérêt pratique de grande importance.With the constant demand for reducing the feature size of transistors and that of the devices, which is guided by Moore’s law, 2D integration is no longer fit to adapt the growing demand. This has led to 3D integration of active devices with the help of Cu/Ni pillars capped with Sn based solder alloys. In the coming years, applications which demand high density interconnects (optoelectronic, microdisplays, IR-detectors, MEMS) will require an interconnect pitch of 10 µm and below. However, Cu/Ni/solder pillars have never been investigated in depth for such a small interconnection pitch. With reduction of interconnect dimension, the diameter of Cu/Ni pillar and solder alloy also reduces. Thus, it is feared that the intermetallic formation, which is the key phenomenon responsible for the bonding, may be problematic due to the reduction in size of Cu pillar capped with solder alloy.The thesis is dedicated to the metallurgical study and its characterization for very small interconnects (5 µm) at 10 µm pitch, where the main focus is given on the physio-chemical mechanisms of soldering between Sn-Ag solder alloy and Ni or Ni/Au layers. For the first time, the mechanism of solid-state interactions between Sn and Ni is studied in depth and also for the first time the Ni3Sn4 SLID (Solid-Liquid-lnterdiffusion) system as an interconnect has been investigated at these dimensions. Moreover, the mechanical and electrical properties as well as the thermal stability of these interconnects are studied. Interestingly, during the latter part of this study, Ni3Sn2 layer is observed during aging of the Ni/Ni3Sn4 system for low temperature (200°C)

Further insight into interfacial interactions in nickel/liquid Sn-Ag solder system at 230-350 A degrees C

International audienceInterfacial reactions are investigated between electrochemical deposited Sn-2 wt%Ag alloy and Ni for isothermal heating at various temperature (230-350 A degrees C) and for various time to study initial stages (1-4 min) and latter stages of reaction (15 min-4 h). During the isothermal heating a continuous compound layer of Ni3Sn4 is formed at the interface between liquid Sn-Ag and solid Ni. In this study scallop like morphology with round and smooth surfaces of Ni3Sn4 intermetallic (IMC) layer is observed for shorter time of isothermal holding, which is in fact contradictory to the observations reported by recent studies which describe the morphology of IMC as elongated and faceted needles. For longer reaction times (> 1 h) the scallop-like morphology is transformed gradually to a facetted abnormal growth morphology but not elongated structure. The average thickness of the reaction layer is proportional to a power function of the annealing time with an exponent n varying from 0.35 to 0.40 and the apparent activation energy for liquid-solid Ni3Sn4 formation was evaluated to be of about 21 kJ mol(-1). The role of deposition method of Ni and Sn layers on the morphology and the growth kinetics of the reaction layer is discussed. A theoretical analysis of the initial formation and growth of Ni3Sn4 phase at the Ni/Sn interface is also presented

On the initial stages of solid state reactions in Ni/Sn-Ag solder system at 150-210 degrees C

For the first time, the initial stage(s) of solid state reaction (150-210 degrees C) between Sn-2wt% Ag and Ni have been investigated. A smooth round, scalloped shape Ni3Sn4 intermetallic (IMC) layer is observed for shorter interaction times (1min-1hr) while for longer times (1hr-4hr) the scallop-like morphology is gradually transformed to a facetted growth morphology. The growth kinetics of the reaction layer follows a power law regime with a growth exponent close to 1/3. The apparent activation energy of this regime was found to be 53 kJ mol(-1). To determine the mechanisms of Ni3Sn4 layer growth, grain growth of the IMC layer was also analyzed. Together with this analysis and kinetic growth of the layer, a simple model is proposed, which gives the insight for possible rate limiting diffusion process for solid state reaction. With this model, we can conclude that the rate limiting diffusion process is grain boundary diffusion. Finally, a theoretical thermodynamic and kinetic analysis for the initial stage of growth of Ni3Sn4 layer was done and grain boundary diffusion coefficient for Ni3Sn4 phase was determined. (c) 2018 Elsevier B.V. All rights reserved

Proceedings of interactive meet on harmonisation of drug proving programme

An interactive meet for harmonisation of drug proving programme of the CCRH was held on 17 September 2013 with an objective to exchange information on standards and methods of proving in the USA, Europe and India and promote international collaboration and harmonisation of drug proving protocol. The Council is in the process of revising its drug proving protocol based on the deliberations of the meet

Exploring NFTs: Opportunities and Intellectual Property Issues

The world of non-fungible tokens (NFTs) and the technology involved is new and exciting. Innovation, however, is always met with new legal issues, and in this case, intellectual property issues. This panel will discuss the individual rights associated with and address the intellectual property issues inherent in NFTs. This panel will also explore the ways in which NFTs are being used in creative spaces, such as fashion, sports, entertainment, and gaming. Moderator: Divya Taneja, Associate, Perkins Coie LLP Panelists: Jeremy Goldman \u2705, Partner, Frankfurt Kurnit Klein & Selz Moish Peltz, Partner, Falcon Rappaport & Berkman PLLC Kurt Sohn \u2718, Associate, Davis+Gilbert LLPhttps://larc.cardozo.yu.edu/fame-recordings/1000/thumbnail.jp

Exploring NFTs: Opportunities and Intellectual Property Issues

The world of non-fungible tokens (NFTs) and the technology involved is new and exciting. Innovation, however, is always met with new legal issues, and in this case, intellectual property issues. This panel will discuss the individual rights associated with and address the intellectual property issues inherent in NFTs. This panel will also explore the ways in which NFTs are being used in creative spaces, such as fashion, sports, entertainment, and gaming. Moderator: Divya Taneja, Associate, Perkins Coie LLP Panelists: Jeremy Goldman \u2705, Partner, Frankfurt Kurnit Klein & Selz Moish Peltz, Partner, Falcon Rappaport & Berkman PLLC Kurt Sohn \u2718, Associate, Davis+Gilbert LLPhttps://larc.cardozo.yu.edu/fame-recordings/1000/thumbnail.jp