13 research outputs found

    Shubnikov-de Haas oscillations of a single layer graphene under dc current bias

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    Shubnikov-de Haas (SdH) oscillations under a dc current bias are experimentally studied on a Hall bar sample of single layer graphene. In dc resistance, the bias current shows the common damping effect on the SdH oscillations and the effect can be well accounted for by an elevated electron temperature that is found to be linearly dependent on the current bias. In differential resistance, a novel phase inversion of the SdH oscillations has been observed with increasing dc bias, namely we observe the oscillation maxima develop into minima and vice versa. Moreover, it is found that the onset biasing current, at which a SdH extremum is about to invert, is linearly dependent on the magnetic field of the SdH extrema. These observations are quantitatively explained with the help of a general SdH formula.Comment: 5 pages, 4 figures, A few references adde

    Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials

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    Defects in hexagonal boron nitride (h-BN) layer can facilitate tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IVIV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×\times10−5 10^-5e/Hz\sqrt Hz at 10 HzHz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in electrochemical potential, we achieve a sensitivity of 0.8μ\mueV/Hz\sqrt Hz

    Low-noise correlation measurements based on software-defined-radio receivers and cooled microwave amplifiers

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    We present a microwave correlation measurement system based on two low-cost USB-connected software defined radio dongles modified to operate as coherent receivers by using a common local oscillator. Existing software is used to obtain I/Q samples from both dongles simultaneously at a software tunable frequency. To achieve low noise, we introduce an easy low-noise solution for cryogenic amplification at 600-900 MHz based on single discrete HEMT with 21 dB gain and 7 K noise temperature. In addition, we discuss the quantization effects in a digital correlation measurement and determination of optimal integration time by applying Allan deviation analysis.Peer reviewe

    Dry transfer method for suspended graphene on lift-off-resist

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    | openaire: EC/H2020/824109/EU//EMPWe demonstrate a fabrication scheme for clean suspended structures using chemical-vapor-deposition-grown graphene and a dry transfer method on lift-off-resist-coated substrates to facilitate suspended graphene nanoelectronic devices for technological applications. It encompasses the demands for scalable fabrication as well as for ultra-fast response due to weak coupling to environment. The fabricated devices exhibited initially a weak field-effect response with substantial positive (p) doping which transformed into weak negative (n) doping upon current annealing at the temperature of 4 K. With increased annealing current, n-doping gradually decreased while the Dirac peak position approached zero in gate voltage. An ultra-low residual charge density of 9 × 108 cm-2 and a mobility of 1.9 × 105 cm2 V-1 s-1 were observed. Our samples display clear Fabry-Pérot (FP) conductance oscillation which indicates ballistic electron transport. The spacings of the FP oscillations are found to depend on the charge density in a manner that agrees with theoretical modeling based on Klein tunneling of Dirac particles. The ultra-low residual charge, the FP oscillations with density dependent period, and the high mobility prove the excellent quality of our suspended graphene devices. Owing to its simplicity, scalability and robustness, this fabrication scheme enhances possibilities for production of suspended, high-quality, two-dimensional-material structures for novel electronic applications.Peer reviewe

    Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials

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    | openaire: EC/H2020/696656/EU//GrapheneCore1 Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×10-5 e/Hz at 10 Hz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in the electrochemical potential, we achieve a sensitivity of 0.8 μeV/Hz.Peer reviewe

    Hanbury Brown and Twiss exchange correlations in a graphene box

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    | openaire: EC/H2020/670743/EU//QuDeTQuadratic detection in linear mesoscopic transport systems produces cross terms that can be viewed as interference signals reflecting statistical properties of charge carriers. In electronic systems these cross-term interferences arise from exchange effects due to Pauli principle. Here we demonstrate fermionic Hanbury Brown and Twiss (HBT) exchange phenomena due to indistinguishability of charge carriers in a diffusive graphene system. These exchange effects are verified using current-current cross-correlations in combination with regular shot noise (autocorrelation) experiments at microwave frequencies. Our results can be modeled using semiclassical analysis for a square-shaped metallic diffusive conductor, including contributions from contact transparency. The experimentally determined HBT exchange factor values lie between the calculated ones for coherent and hot electron transport.Peer reviewe
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