25 research outputs found

    Photodoping through local charge carrier accumulation in alloyed hybrid perovskites for highly efficient luminescence

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    Metal halide perovskites have emerged as exceptional semiconductors for optoelectronic applications. Substitution of the monovalent cations has advanced luminescence yields and device efficiencies. Here, we control the cation alloying to enhance optoelectronic performance through alteration of the charge carrier dynamics in mixed-halide perovskites. In contrast to single-halide perovskites, we find high luminescence yields for photoexcited carrier densities far below solar illumination conditions. Using time-resolved spectroscopy we show that the charge carrier recombination regime changes from second to first order within the first tens of nanoseconds after excitation. Supported by microscale mapping of the optical bandgap, electrically gated transport measurements and first-principles calculations, we demonstrate that spatially varying energetic disorder in the electronic states causes local charge accumulation, creating p- and n-type photodoped regions, which unearths a strategy for efficient light emission at low charge-injection in solar cells and light-emitting diodes

    Engineering the Photoresponse of InAs Nanowires

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    We report on individual-InAs nanowire optoelectronic devices which can be tailored to exhibit either negative or positive photoconductivity (NPC or PPC). The NPC photoresponse time and magnitude is found to be highly tunable by varying the nanowire diameter under controlled growth conditions. Using hysteresis characterization, we decouple the observed photoexcitation-induced hot electron trapping from conventional electric field-induced trapping to gain a fundamental insight into the interface trap states responsible for NPC. Furthermore, we demonstrate surface passivation without chemical etching which both enhances the field-effect mobility of the nanowires by approximately an order of magnitude and effectively eliminates the hot carrier trapping found to be responsible for NPC, thus restoring an "intrinsic" positive photoresponse. This opens pathways toward engineering semiconductor nanowires for novel optical-memory and photodetector applications.We acknowledge funding from the EPSRC (Grant No. EP/ M009505/1) and the ERC (Grant No. 716471, ACrossWire). S.H. acknowledges funding from the EPSRC (Grant No. EP/ P005152/1). This work was also supported by the Australian Research Council, Australian National Fabrication Facility and Australian Microscopy & Microanalysis Research Facility. J.A.A.-W. acknowledges the support of his Research Fellowships from the Royal Commission for the Exhibition of 1851 and Churchill College, Cambridge. C.K.G acknowledges the support of her scholarship from The Winston Churchill Foundation of the United States

    Engineering the Photoresponse of InAs Nanowires.

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    We report on individual-InAs nanowire optoelectronic devices which can be tailored to exhibit either negative or positive photoconductivity (NPC or PPC). The NPC photoresponse time and magnitude is found to be highly tunable by varying the nanowire diameter under controlled growth conditions. Using hysteresis characterization, we decouple the observed photoexcitation-induced hot electron trapping from conventional electric field-induced trapping to gain a fundamental insight into the interface trap states responsible for NPC. Furthermore, we demonstrate surface passivation without chemical etching which both enhances the field-effect mobility of the nanowires by approximately an order of magnitude and effectively eliminates the hot carrier trapping found to be responsible for NPC, thus restoring an "intrinsic" positive photoresponse. This opens pathways toward engineering semiconductor nanowires for novel optical-memory and photodetector applications

    Solvent–Morphology–Property Relationship of PTB7:PC71\mathrm{PTB7:PC_{71}}BM Polymer Solar Cells

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    The influence of three different solvents and a solvent additive on the morphology and photovoltaic performance of bulk heterojunction films made of the copolymer based on thieno[3,4-b]thiophene-alt-benzodithiophene unit PTB7-F40 blended with [6,6]-phenyl-C71-butyric acid methyl ester (PC71_{71}BM) is investigated. Optical microscopy and atomic force microscopy are combined with X-ray reflectivity and grazing incidence small and wide-angle X-ray scattering (GISAXS and GIWAXS, respectively), enabling the characterization of the morphology of the whole photoactive film. The detailed study reveals that different length scales of PCBM clusters are observed using different solvents, while adding a solvent additive results in the PCBM clusters being selectively dissolved. Vertical and lateral phase separation occurs during spin coating and depends on the solvent used. A hierarchical morphology is detected within the bulk film through GISAXS measurements. Furthermore, GIWAXS shows that a rather amorphous film with low crystallinity was probed, which substantiates that high crystallinity is not necessarily required for high performance organic solar cells. Different models for the morphology are proposed through the combination of all the findings and correlated with the corresponding device properties. Consequently, the solvent-induced different device performance is mainly ascribed to the varied lateral structure sizes, whereas the highest device performance is a result of the smallest average multilength scale lateral structure sizes with the smallest length scale matching the exciton diffusion length

    Solvent–Morphology–Property Relationship of PTB7:PC<sub>71</sub>BM Polymer Solar Cells

    No full text
    The influence of three different solvents and a solvent additive on the morphology and photovoltaic performance of bulk heterojunction films made of the copolymer based on thieno­[3,4-<i>b</i>]­thiophene-<i>alt</i>-benzodithiophene unit PTB7-F40 blended with [6,6]-phenyl-C71-butyric acid methyl ester (PC<sub>71</sub>BM) is investigated. Optical microscopy and atomic force microscopy are combined with X-ray reflectivity and grazing incidence small and wide-angle X-ray scattering (GISAXS and GIWAXS, respectively), enabling the characterization of the morphology of the whole photoactive film. The detailed study reveals that different length scales of PCBM clusters are observed using different solvents, while adding a solvent additive results in the PCBM clusters being selectively dissolved. Vertical and lateral phase separation occurs during spin coating and depends on the solvent used. A hierarchical morphology is detected within the bulk film through GISAXS measurements. Furthermore, GIWAXS shows that a rather amorphous film with low crystallinity was probed, which substantiates that high crystallinity is not necessarily required for high performance organic solar cells. Different models for the morphology are proposed through the combination of all the findings and correlated with the corresponding device properties. Consequently, the solvent-induced different device performance is mainly ascribed to the varied lateral structure sizes, whereas the highest device performance is a result of the smallest average multilength scale lateral structure sizes with the smallest length scale matching the exciton diffusion length
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