Observation of Si 2p Core‐Level Shift in Si/High‐κ Dielectric Interfaces Containing a Negative Charge

Negative static charge and induced internal electric field have often been observed in the interfaces between silicon and high‐κ dielectrics, for example Al2O3 and HfO2. The electric field provides either beneficial (e.g., field‐effect passivation) or harmful (e.g., voltage instability) effect depending on the application. Different intrinsic and extrinsic defects in the dielectric film and interface have been suggested to cause the static charge but this issue is still unresolved. Here spectroscopic evidence is presented for a structural change in the interfaces where static charge is present. The observed correlation between the Si core‐level shift and static negative charge reveals the role of Si bonding environment modification in the SiO2 phase. The result is in good agreement with recent theoretical models, which relate the static charge formation to interfacial atomic transformations together with the resulting acceptor doping of SiO2

Patterns and flow in frictional fluid dynamics

Pattern-forming processes in simple fluids and suspensions have been studied extensively, and the basic displacement structures, similar to viscous fingers and fractals in capillary dominated flows, have been identified. However, the fundamental displacement morphologies in frictional fluids and granular mixtures have not been mapped out. Here we consider Coulomb friction and compressibility in the fluid dynamics, and discover surprising responses including highly intermittent flow and a transition to quasi-continuodynamics. Moreover, by varying the injection rate over several orders of magnitude, we characterize new dynamic modes ranging from stick-slip bubbles at low rate to destabilized viscous fingers at high rate. We classify the fluid dynamics into frictional and viscous regimes, and present a unified description of emerging morphologies in granular mixtures in the form of extended phase diagrams

Heme oxygenase-1 and carbon monoxide in pulmonary medicine

Heme oxygenase-1 (HO-1), an inducible stress protein, confers cytoprotection against oxidative stress in vitro and in vivo. In addition to its physiological role in heme degradation, HO-1 may influence a number of cellular processes, including growth, inflammation, and apoptosis. By virtue of anti-inflammatory effects, HO-1 limits tissue damage in response to proinflammatory stimuli and prevents allograft rejection after transplantation. The transcriptional upregulation of HO-1 responds to many agents, such as hypoxia, bacterial lipopolysaccharide, and reactive oxygen/nitrogen species. HO-1 and its constitutively expressed isozyme, heme oxygenase-2, catalyze the rate-limiting step in the conversion of heme to its metabolites, bilirubin IXα, ferrous iron, and carbon monoxide (CO). The mechanisms by which HO-1 provides protection most likely involve its enzymatic reaction products. Remarkably, administration of CO at low concentrations can substitute for HO-1 with respect to anti-inflammatory and anti-apoptotic effects, suggesting a role for CO as a key mediator of HO-1 function. Chronic, low-level, exogenous exposure to CO from cigarette smoking contributes to the importance of CO in pulmonary medicine. The implications of the HO-1/CO system in pulmonary diseases will be discussed in this review, with an emphasis on inflammatory states

Increased surface recombination in crystalline silicon under light soaking due to Cu contamination

avaa käsikirjoitus, kun julkaistuLight-induced degradation (LID) can occur in crystalline silicon (Si) due to increased recombination in the bulk or at the surfaces. As an example, copper (Cu) is a contaminant that reportedly causes LID in the bulk of Si under illumination. In this article, we show that Cu contamination can also increase recombination at the surface under illumination using surface saturation current density (J 0) analysis. More specifically, in the presence of Cu we observed that J 0 increased from 14 fA/cm 2 to 330 fA/cm 2 in SiO 2 passivated Float Zone (FZ) Si, and from 11 fA/cm 2 to 200 fA/cm 2 in corresponding Czochralski (Cz) Si after illumination under an LED lamp (0.6 Suns, 80 °C). In reference samples without Cu contamination, the J 0 was unaffected. These results demonstrate that a significant increase in surface recombination is possible without the presence of hydrogen. Furthermore, hydrogen was not seen to affect the Cu-induced surface degradation as similar experiments made with hydrogenated silicon nitride (SiN x:H) did not show further increase in J 0. However, the timescale of the observed degradation was relatively fast (hours) indicating that Cu-induced surface degradation is a separate phenomenon from the earlier reported surface-related degradation.Peer reviewe