Structural effects in UO2 thin films irradiated with fission-energy Xe ions

Uranium dioxide thin films have been successfully grown on LSAT (Al10La3O51Sr14Ta7) substrates by reactive magnetron sputtering. Irradiation by 92 MeV 129Xe23+ ions to simulate fission damage that occurs within nuclear fuels caused microstructural and crystallographic changes. Initially flat and continuous thin films were produced by magnetron sputtering with a root mean square roughness of 0.35 nm determined by AFM. After irradiation, this roughness increased to 60–70 nm, with the films developing discrete microstructural features: small grains (∼3 μm), along with larger circular (up to 40 μm) and linear formations with non-uniform composition according to the SEM, AFM and EDX results. The irradiation caused significant restructuring of the UO2 films that was manifested in significant film-substrate mixing, observed through EDX analysis. Diffusion of Al from the substrate into the film in unirradiated samples was also observed

Structural effects in UO2 thin films irradiated with U ions

This work presents the results of a detailed structural characterisation of irradiated and unirradiated single crystal thin films of UO2. Thin films of UO2 were produced by reactive magnetron sputtering onto (0 0 1), (1 1 0) and (1 1 1) single crystal yttria-stabilised zirconia (YSZ) substrates. Half of the samples were irradiated with 110 MeV 238U31+ ions to fluences of 5 × 1010, 5 × 1011 and 5 × 1012 ions/cm2 to induce radiation damage, with the remainder kept for reference measurements. It was observed that as-produced UO2 films adopted the crystallographic orientation of their YSZ substrates. The irradiation fluences used in this study however, were not sufficient to cause any permanent change in the crystalline nature of UO2. It has been demonstrated that the effect of epitaxial re-crystallisation of the induced radiation damage can be quantified in terms of kernel average misorientation (KAM) and different crystallographic orientations of UO2 respond differently to ion irradiation

Structural effects in UO₂ thin films irradiated with U ions

AbstractThis work presents the results of a detailed structural characterisation of irradiated and unirradiated single crystal thin films of UO2. Thin films of UO2 were produced by reactive magnetron sputtering onto (001), (110) and (111) single crystal yttria-stabilised zirconia (YSZ) substrates. Half of the samples were irradiated with 110MeV 238U31+ ions to fluences of 5×1010, 5×1011 and 5×1012ions/cm2 to induce radiation damage, with the remainder kept for reference measurements. It was observed that as-produced UO2 films adopted the crystallographic orientation of their YSZ substrates. The irradiation fluences used in this study however, were not sufficient to cause any permanent change in the crystalline nature of UO2. It has been demonstrated that the effect of epitaxial re-crystallisation of the induced radiation damage can be quantified in terms of kernel average misorientation (KAM) and different crystallographic orientations of UO2 respond differently to ion irradiation