Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in InGaAs

We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs(001) by transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % and respective thicknesses of 20, 22 and 23 monolayers were deposited at 535 C. The parameters were chosen to grow layers slightly above and below the transition between the two- and three-dimensional growth mode. In-concentration profiles were obtained from high-resolution TEM images by composition evaluation by lattice fringe analysis. The measured profiles can be well described applying the segregation model of Muraki et al. [Appl. Phys. Lett. 61 (1992) 557]. Calculated photoluminescence peak positions on the basis of the measured concentration profiles are in good agreement with the experimental ones. Evaluating experimental In-concentration profiles it is found that the transition from the two-dimensional to the three-dimensional growth mode occurs if the indium content in the In-floating layer exceeds 1.1+/-0.2 monolayers. The measured exponential decrease of the In-concentration within the cap layer on top of the islands reveals that the In-floating layer is not consumed during island formation. The segregation efficiency above the islands is increased compared to the quantum wells which is explained tentatively by strain-dependent lattice-site selection of In. In addition, In0.25Ga0.75As quantum wells were grown at different temperatures between 500 oC and 550 oC. The evaluation of concentration profiles shows that the segregation efficiency increases from R=0.65 to R=0.83.Comment: 16 pages, 6 figures, 1 table, sbmitted in Phys. Rev.

Optical studies of Ge islanding on Si(111)

We report an experimental study of the optical properties of island layers resulting from molecular beam epitaxial deposition of Ge on Si(111) substrates. The combination of electroreflectance spectroscopy of the E1 transition and Raman scattering allows us to separately determine the strain and composition of the islands. For deposition at 500 °C a deposited layer of 1.36 nm of Ge assembles into 80 nm diameter islands 11 nm thick. The average Si impurity content in the islands is 2.5% while the average in-plane strain is 0.5%. Both strain and Si impurity content in islands decrease with increasing Ge depositio

Multichannel quantum-defect theory for ultracold atom-ion collisions

We develop an analytical model for ultracold atom-ion collisions using the multichannel quantum-defect formalism. The model is based on the analytical solutions of the r^-4 long-range potential and on the application of a frame transformation between asymptotic and molecular bases. This approach allows the description of the atom-ion interaction in the ultracold domain in terms of three parameters only: the singlet and triplet scattering lengths, assumed to be independent of the relative motion angular momentum, and the lead dispersion coefficient of the asymptotic potential. We also introduce corrections to the scattering lengths that improve the accuracy of our quantum-defect model for higher order partial waves, a particularly important result for an accurate description of shape and Feshbach resonances at finite temperature. The theory is applied to the system composed of a 40Ca+ ion and a Na atom, and compared to numerical coupled-channel calculations carried out using ab initio potentials. For this particular system, we investigate the spectrum of bound states, the rate of charge-transfer processes, and the collision rates in the presence of magnetic Feshbach resonances at zero and finite temperature.Comment: 39 pages, 21 figure

Schottky barrier height measurements of type-A and type-B NiSi2 epilayers on Si

Schottky barrier heights of single-crystal type-A and type-B NiSi2 epilayers on nondegenerate n-(111) Si have been measured by photoresponse and forward I–V methods. High-quality molecular beam epitaxy grown NiSi2 layers of thicknesses ranging from 70 to 600 Å on sputter-cleaned, P-doped Si subtrates (~ 1.5 × 1015 cm – 3) were studied. The type-A and type-B orientations consistently yield photoresponse barrier heights which differ by greater than 0.1 eV. We observe the value phi Bn=0.62 ± 0.01 eV for all type-A structures from both photoresponse and I–V measurements. However, we obtain a discrepancy between barrier heights measured by I–V (phi Bn=0.69 ± 0.01 eV) and photoresponse (phi Bn=0.77 ± 0.05 eV) methods, and in addition consistently observe an unusual bowing of the type-B photoresponse curves at low photon energies. We show that both the detailed shape of the type-B photoresponse curves and the discrepancy between I–V and photoresponse-measured barrier heights can be accounted for by modeling the type-B barrier as a mixture of high and low barrier regions. Quantitative agreement with experiment is obtained for the values phi hi =0.81 ± 0.01 eV and phi lo 0.64 ± 0.01 eV, with effective fractional area coverages of 91% and 9% for high- and low-barrier regions, respectively

Physics and chemistry of hydrogen in the vacancies of semiconductors

Hydrogen is well known to cause electrical passivation of lattice vacancies in semiconductors. This effect follows from the chemical passivation of the dangling bonds. Recently it was found that H in the carbon vacancy of SiC forms a three-center bond with two silicon neighbors in the vacancy, and gives rise to a new electrically active state. In this paper we examine hydrogen in the anion vacancies of BN, AlN, and GaN. We find that three-center bonding of H is quite common and follows clear trends in terms of the second-neighbor distance in the lattice, the typical (two-center) hydrogen-host-atom bond length, the electronegativity difference between host atoms and hydrogen, as well as the charge state of the vacancy. Three-center bonding limits the number of H atoms a nitrogen vacancy can capture to two, and prevents electric passivation in GaAs as well

Can forest management based on natural disturbances maintain ecological resilience?

Given the increasingly global stresses on forests, many ecologists argue that managers must maintain ecological resilience: the capacity of ecosystems to absorb disturbances without undergoing fundamental change. In this review we ask: Can the emerging paradigm of natural-disturbance-based management (NDBM) maintain ecological resilience in managed forests? Applying resilience theory requires careful articulation of the ecosystem state under consideration, the disturbances and stresses that affect the persistence of possible alternative states, and the spatial and temporal scales of management relevance. Implementing NDBM while maintaining resilience means recognizing that (i) biodiversity is important for long-term ecosystem persistence, (ii) natural disturbances play a critical role as a generator of structural and compositional heterogeneity at multiple scales, and (iii) traditional management tends to produce forests more homogeneous than those disturbed naturally and increases the likelihood of unexpected catastrophic change by constraining variation of key environmental processes. NDBM may maintain resilience if silvicultural strategies retain the structures and processes that perpetuate desired states while reducing those that enhance resilience of undesirable states. Such strategies require an understanding of harvesting impacts on slow ecosystem processes, such as seed-bank or nutrient dynamics, which in the long term can lead to ecological surprises by altering the forest's capacity to reorganize after disturbance

Glycosaminoglycans and Sialylated Glycans Sequentially Facilitate Merkel Cell Polyomavirus Infectious Entry

Merkel cell polyomavirus (MCV or MCPyV) appears to be a causal factor in the development of Merkel cell carcinoma, a rare but highly lethal form of skin cancer. Although recent reports indicate that MCV virions are commonly shed from apparently healthy human skin, the precise cellular tropism of the virus in healthy subjects remains unclear. To begin to explore this question, we set out to identify the cellular receptors or co-receptors required for the infectious entry of MCV. Although several previously studied polyomavirus species have been shown to bind to cell surface sialic acid residues associated with glycolipids or glycoproteins, we found that sialylated glycans are not required for initial attachment of MCV virions to cultured human cell lines. Instead, glycosaminoglycans (GAGs), such as heparan sulfate (HS) and chondroitin sulfate (CS), serve as initial attachment receptors during the MCV infectious entry process. Using cell lines deficient in GAG biosynthesis, we found that N-sulfated and/or 6-O-sulfated forms of HS mediate infectious entry of MCV reporter vectors, while CS appears to be dispensable. Intriguingly, although cell lines deficient in sialylated glycans readily bind MCV capsids, the cells are highly resistant to MCV reporter vector-mediated gene transduction. This suggests that sialylated glycans play a post-attachment role in the infectious entry process. Results observed using MCV reporter vectors were confirmed using a novel system for infectious propagation of native MCV virions. Taken together, the findings suggest a model in which MCV infectious entry occurs via initial cell binding mediated primarily by HS, followed by secondary interactions with a sialylated entry co-factor. The study should facilitate the development of inhibitors of MCV infection and help shed light on the infectious entry pathways and cellular tropism of the virus

Positive correlation between Merkel cell polyomavirus viral load and capsid-specific antibody titer

Merkel cell polyomavirus (MCPyV or MCV) is the first polyomavirus to be clearly implicated as a causal agent underlying a human cancer, Merkel cell carcinoma (MCC). Infection with MCPyV is common in the general population, and a majority of adults shed MCPyV from the surface of their skin. In this study, we quantitated MCPyV DNA in skin swab specimens from healthy volunteers sampled at different anatomical sites over time periods ranging from 3 months to 4 years. The volunteers were also tested using a serological assay that detects antibodies specific for the MCPyV virion. There was a positive correlation between MCPyV virion-specific antibody titers and viral load at all anatomical sites tested (dorsal portion of the hands, forehead, and buttocks) (Spearman’s r 0.644, P < 0.0001). The study results are consistent with previous findings suggesting that the skin is primary site of chronic MCPyV infection in healthy adults and suggest that the magnitude of an individual’s seroresponsiveness against the MCPyV virion generally reflects the overall MCPyV DNA load across wide areas of the skin. In light of previous reports indicating a correlation between MCC and strong MCPyV-specific seroresponsiveness, this model suggests that poorly controlled chronic MCPyV infection might be a risk factor in the development of MCC

Enhanced Fusion Pore Expansion Mediated by the Trans-Acting Endodomain of the Reovirus FAST Proteins

The reovirus fusion-associated small transmembrane (FAST) proteins are virus-encoded membrane fusion proteins that function as dedicated cell–cell fusogens. The topology of these small, single-pass membrane proteins orients the majority of the protein on the distal side of the membrane (i.e., inside the cell). We now show that ectopic expression of the endodomains of the p10, p14, and p15 FAST proteins enhances syncytiogenesis induced by the full-length FAST proteins, both homotypically and heterotypically. Results further indicate that the 68-residue cytoplasmic endodomain of the p14 FAST protein (1) is endogenously generated from full-length p14 protein expressed in virus-infected or transfected cells; (2) enhances syncytiogenesis subsequent to stable pore formation; (3) increases the syncytiogenic activity of heterologous fusion proteins, including the differentiation-dependent fusion of murine myoblasts; (4) exerts its enhancing activity from the cytosol, independent of direct interactions with either the fusogen or the membranes being fused; and (5) contains several regions with protein–protein interaction motifs that influence enhancing activity. We propose that the unique evolution of the FAST proteins as virus-encoded cellular fusogens has allowed them to generate a trans-acting, soluble endodomain peptide to harness a cellular pathway or process involved in the poorly understood process that facilitates the transition from microfusion pores to macrofusion and syncytiogenesis