Significance of soil organic phosphorus to plant growth

The first indication that soils contain organic phosphorus was obtained in 1844 by Mulder (20), in experiments wherein he could not obtain phosphorus-free preparations of certain soil organic matter fractions. Since the time of Mulder, a number of investigations have dealt specifically with the problem of soil organic phosphorus, and it is now generally recognized that a portion of the soil phosphorus occurs in organic forms. The distribution of organic phosphorus in different soil types and groups has been investigated in only a preliminary way, but it has become apparent that the quantities of organic phosphorus are correlated with the quantities of soil organic matter. In Iowa and other North Central states, there are extensive areas of soils that contain relatively large quantities of both substances

Post deposition annealing of epitaxial Ce1-xPrxO2-δ films grown on Si(111)

In this work the structural and morphological changes of Ce1−xPrxO2−δ (x = 0.20, 0.35 and 0.75) films grown on Si(111) due to post deposition annealing are investigated by low energy electron diffraction combined with a spot profile analysis. The surface of the oxide films exhibit mosaics with large terraces separated by monoatomic steps. It is shown that the Ce/Pr ratio and post deposition annealing temperature can be used to tune the mosaic spread, terrace size and step height of the grains. The morphological changes are accompanied by a phase transition from a fluorite type lattice to a bixbyite structure. Furthermore, at high PDA temperatures a silicate formation via a polycrystalline intermediate state is observed

Retrospective Denial as A Coping Method

Worldwide, gastric cancer is one of the most common and fatal cancers. The majority of patients present with an advanced stage of disease. Even with use of palliative chemotherapy most patients die within 1 year after diagnosis. Medical psychological attention after a diagnosis of incurable cancer is focused on end of life support. This paper presents the care of a patient treated with palliative intent with chemotherapy for an irresectable histologically confirmed gastric cancer. When, unexpectedly prolonged symptom free survival followed, the reaction of the patient came as a surprise to the attending medical team. In this case history we urge those who care for incurable cancer patients, that the rare patient who survives against all odds may require special psychological care

Control of electron-state coupling in asymmetric Ge/Si−Ge quantum wells

Theoretical predictions indicate that the n-type Ge / Si − Ge multi-quantum-well system is the most promising material for the realization of a Si -compatible THz quantum cascade laser operating at room temperature. To advance in this direction, we study, both experimentally and theoretically, asymmetric coupled multi-quantum-well samples based on this material system, that can be considered as the basic building block of a cascade architecture. Extensive structural characterization shows the high material quality of strain-symmetrized structures grown by chemical vapor deposition, down to the ultrathin barrier limit. Moreover, THz absorption spectroscopy measurements supported by theoretical modeling unambiguously demonstrate inter-well coupling and wavefunction tunneling. The agreement between experimental data and simulations allows us to characterize the tunneling barrier parameters and, in turn, achieve highly controlled engineering of the electronic structure in forthcoming unipolar cascade systems based on n-type Ge / Si − Ge multi-quantum-wells

Control of Electron-State Coupling in Asymmetric Ge/Si-Ge Quantum Wells

Theoretical predictions indicate that the n-type Ge/Si-Ge multi-quantum-well system is the most promising material for the realization of a Si-compatible THz quantum cascade laser operating at room temperature. To advance in this direction, we study, both experimentally and theoretically, asymmetric coupled multi-quantum-well samples based on this material system, that can be considered as the basic building block of a cascade architecture. Extensive structural characterization shows the high material quality of strain-symmetrized structures grown by chemical vapor deposition, down to the ultrathin barrier limit. Moreover, THz absorption spectroscopy measurements supported by theoretical modeling unambiguously demonstrate inter-well coupling and wavefunction tunneling. The agreement between experimental data and simulations allows us to characterize the tunneling barrier parameters and, in turn, achieve highly controlled engineering of the electronic structure in forthcoming unipolar cascade systems based on n-type Ge/Si-Ge multi-quantum-wells

High-Quality n-Type Ge/SiGe Multilayers for THz Quantum Cascade Lasers

The exploitation of intersubband transitions in Ge/SiGe quantum cascade devices could pave the way towards the integration of THz light emitters into the silicon-based technology. Aiming at the realization of a Ge/SiGe Quantum Cascade Laser (QCL), we investigate optical and structural properties of n-type Ge/SiGe coupled quantum well systems. The samples have been investigated by means of X-ray diffraction, scanning transmission electron microscopy, atom probe tomography and Fourier Transform Infrared absorption spectroscopy to assess the growth capability with respect to QCL design requirements, carefully identified by means of modelling based on the non-equilibrium Green function formalism

Electron-doped SiGe Quantum Well Terahertz Emitters pumped by FEL pulses

We explore saturable absorption and terahertz photoluminescence emission in a set of n-doped Ge/SiGe asymmetric coupled quantum wells, designed as three-level systems (i.e., quantum fountain emitter). We generate a non-equilibrium population by optical pumping at the 1→3 transition energy using picosecond pulses from a free-electron laser and characterize this effect by measuring absorption as a function of the pump intensity. In the emission experiment we observe weak emission peaks in the 14–25 meV range (3–6 THz) corresponding to the two intermediate intersubband transition energies. The results represent a step towards silicon-based integrated terahertz emitters

A theory on reports of constructive (real) and illusory posttraumatic growth

It has been suggested that self-reported posttraumatic growth could sometimes be considered as a way for people to protect themselves from the distress of trauma. In this case, reports of posttraumatic growth could be illusory. We suggest a theory on self-reported constructive (real) posttraumatic growth and illusory posttraumatic growth by using Rogers’s (1959) theory and the work by Vaillant (1995). Through this theoretical framework we attempt to explain when reports of posttraumatic growth are likely to be constructive and real and when such reports are likely to represent aspects of illusions. We will also consider the implications for research practice

Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si

SiGeSn holds great promise for enabling fully group-IV integrated photonics operating at wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically pumped GeSn microring laser based on SiGeSn/GeSn heterostructures. The ring shape allows for enhanced strain relaxation, leading to enhanced optical properties, and better guiding of the carriers into the optically active region. We have engineered a partial undercut of the ring to further promote strain relaxation while maintaining adequate heat sinking. Lasing is measured up to 90 K, with a 75 K T0. Scaling of the threshold current density as the inverse of the outer circumference is linked to optical losses at the etched surface, limiting device performance. Modeling is consistent with experiments across the range of explored inner and outer radii. These results will guide additional device optimization, aiming at improving electrical injection and using stressors to increase the bandgap directness of the active material