Ab-initio study of disorder effects on the electronic and magnetic structures of Sr2_2FeMoO6_6

We have investigated the electronic structure of ordered and disordered Sr$_2$FeMoO$_6$ using {\it ab-initio} band structure methods. The effect of disorder was simulated within super-cell calculations to realize several configurations with mis-site disorders. It is found that such disorder effects destroy the half-metallic ferro-magnetic state of the ordered compound. It also leads to a substantial reduction of the magnetic moments at the Fe sites in the disordered configurations. Most interestingly, it is found for the disordered configurations, that the magnetic coupling within the Fe sub-lattice as well as that within the Mo sub-lattice always remain ferro-magnetic, while the two sub-lattices couple anti-ferromagnetically, in close analogy to the magnetic structure of the ordered compound, but in contrast to recent suggestions.Comment: 7 pages, 3 figure

Impurity effects on semiconductor quantum bits in coupled quantum dots

We theoretically consider the effects of having unintentional charged impurities in laterally coupled two-dimensional double (GaAs) quantum dot systems, where each dot contains one or two electrons and a single charged impurity in the presence of an external magnetic field. Using molecular orbital and configuration interaction method, we calculate the effect of the impurity on the 2-electron energy spectrum of each individual dot as well as on the spectrum of the coupled-double-dot 2-electron system. We find that the singlet-triplet exchange splitting between the two lowest energy states, both for the individual dots and the coupled dot system, depends sensitively on the location of the impurity and its coupling strength (i.e. the effective charge). A strong electron-impurity coupling breaks down equality of the two doubly-occupied singlets in the left and the right dot leading to a mixing between different spin singlets. As a result, the maximally entangled qubit states are no longer fully obtained in zero magnetic field case. Moreover, a repulsive impurity results in a triplet-singlet transition as the impurity effective charge increases or/and the impurity position changes. We comment on the impurity effect in spin qubit operations in the double dot system based on our numerical results.Comment: published version on Physical Review B journal, 25 pages, 26 figure

Origin of Ferromagnetism and its pressure and doping dependence in Tl2_{2}Mn2_{2}O7_{7}

Using NMTO-{\it downfolding} technique, we explore and establish the origin of ferromagnetism in the pyrochlore system, Tl$_{2}$Mn$_{2}$O$_{7}$. It is found to be driven by hybridization induced spin-polarization of the delocalized charge carriers derived from Tl-$s$ and O-$p$ states. The mean-field estimate of the ferromagnetic transition temperature, T$_c$, estimated using computed exchange integrals are found to be in good agreement with the measurements. We find an enhancement of T$_{c}$ for moderate doping with nonmagnetic Sb and a suppression of T$_{c}$ upon application of pressure, both in agreement with experimental findings.Comment: Accepted for publication in PR

Screening of charged impurities with multi-electron singlet-triplet spin qubits in quantum dots

Charged impurities in semiconductor quantum dots comprise one of the main obstacles to achieving scalable fabrication and manipulation of singlet-triplet spin qubits. We theoretically show that using dots that contain several electrons each can help to overcome this problem through the screening of the rough and noisy impurity potential by the excess electrons. We demonstrate how the desired screening properties turn on as the number of electrons is increased, and we characterize the properties of a double quantum dot singlet-triplet qubit for small odd numbers of electrons per dot. We show that the sensitivity of the multi-electron qubit to charge noise may be an order of magnitude smaller than that of the two-electron qubit.Comment: 17 pages, 11 figures; typos corrected, minor revision

Analytically solvable driven time-dependent two-level quantum systems

Analytical solutions to the time-dependent Schrodinger equation describing a driven two-level system are invaluable to many areas of physics, but they are also extremely rare. Here, we present a simple algorithm that generates an unlimited number of exact analytical solutions. We show that a general single-axis driving term and its corresponding evolution operator are determined by a single real function which is constrained only by a certain inequality and initial conditions. Any function satisfying these constraints yields an exact analytical solution. We demonstrate this method by presenting several new exact solutions to the time-dependent Schrodinger equation. Our general method and many of the new solutions we present are particularly relevant to qubit control in quantum computing applications.Comment: 4.5 pages, 4 figures, PRL versio

Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic effect, spin valve effect, and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.Comment: Minor Revisions. To appear in Phys. Rev. Let

Analysis of the resistance in p-SiGe over a wide temperature range

The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insulating contributions contained in the calculation of the scattering rate 1/\td(E,T), each dominating in a limited temperature range.Comment: 4 pages with 5 figure