870 research outputs found
Detection of low energy single ion impacts in micron scale transistors at room temperature
We report the detection of single ion impacts through monitoring of changes
in the source-drain currents of field effect transistors (FET) at room
temperature. Implant apertures are formed in the interlayer dielectrics and
gate electrodes of planar, micro-scale FETs by electron beam assisted etching.
FET currents increase due to the generation of positively charged defects in
gate oxides when ions (121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channel
regions. Implant damage is repaired by rapid thermal annealing, enabling
iterative cycles of device doping and electrical characterization for
development of single atom devices and studies of dopant fluctuation effects
Laser cooling of new atomic and molecular species with ultrafast pulses
We propose a new laser cooling method for atomic species whose level
structure makes traditional laser cooling difficult. For instance, laser
cooling of hydrogen requires single-frequency vacuum-ultraviolet light, while
multielectron atoms need single-frequency light at many widely separated
frequencies. These restrictions can be eased by laser cooling on two-photon
transitions with ultrafast pulse trains. Laser cooling of hydrogen,
antihydrogen, and many other species appears feasible, and extension of the
technique to molecules may be possible.Comment: revision of quant-ph/0306099, submitted to PR
Processing Issues in Top-Down Approaches to Quantum Computer Development in Silicon
We describe critical processing issues in our development of single atom
devices for solid-state quantum information processing. Integration of single
31P atoms with control gates and single electron transistor (SET) readout
structures is addressed in a silicon-based approach. Results on electrical
activation of low energy (15 keV) P implants in silicon show a strong dose
effect on the electrical activation fractions. We identify dopant segregation
to the SiO2/Si interface during rapid thermal annealing as a dopant loss
channel and discuss measures of minimizing it. Silicon nanowire SET pairs with
nanowire width of 10 to 20 nm are formed by electron beam lithography in SOI.
We present first results from Coulomb blockade experiments and discuss issues
of control gate integration for sub-40nm gate pitch levels
Absolute calibration of GafChromic film for very high flux laser driven ion beams.
We report on the calibration of GafChromic HD-v2 radiochromic film in the extremely high dose regime up to 100 kGy together with very high dose rates up to 7 Ă— 1011 Gy/s. The absolute calibration was done with nanosecond ion bunches at the Neutralized Drift Compression Experiment II particle accelerator at Lawrence Berkeley National Laboratory (LBNL) and covers a broad dose dynamic range over three orders of magnitude. We then applied the resulting calibration curve to calibrate a laser driven ion experiment performed on the BELLA petawatt laser facility at LBNL. Here, we reconstructed the spatial and energy resolved distributions of the laser-accelerated proton beams. The resulting proton distribution is in fair agreement with the spectrum that was measured with a Thomson spectrometer in combination with a microchannel plate detector
Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon
We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically
enriched 28Si and find high degrees of electrical activation and low levels of
dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance
shows that spin echo decay is sensitive to the dopant depths, and the interface
quality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profiles
peaking 50 nm below a Si/SiO2 interface, increasing to 0.75 ms when the surface
is passivated with hydrogen. These measurements provide benchmark data for the
development of devices in which quantum information is encoded in donor
electron spins
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Integration of Ion Implantation with Scanning ProbeAlignment
We describe a scanning probe instrument which integrates ion beams with imaging and alignment functions of a piezo resistive scanning probe in high vacuum. Energetic ions (1 to a few hundred keV) are transported through holes in scanning probe tips [1]. Holes and imaging tips are formed by Focused Ion Beam (FIB) drilling and ion beam assisted thin film deposition. Transport of single ions can be monitored through detection of secondary electrons from highly charged dopant ions (e. g., Bi{sup 45+}) enabling single atom device formation. Fig. 1 shows SEM images of a scanning probe tip formed by ion beam assisted Pt deposition in a dual beam FIB. Ion beam collimating apertures are drilled through the silicon cantilever with a thickness of 5 {micro}m. Aspect ratio limitations preclude the direct drilling of holes with diameters well below 1 {micro}m, and smaller hole diameters are achieved through local thin film deposition [2]. The hole in Fig. 1 was reduced from 2 {micro}m to a residual opening of about 300 nm. Fig. 2 shows an in situ scanning probe image of an alignment dot pattern taken with the tip from Fig. 1. Transport of energetic ions through the aperture in the scanning probe tip allows formation of arbitrary implant patterns. In the example shown in Fig. 2 (right), a 30 nm thick PMMA resist layer on silicon was exposed to 7 keV Ar{sup 2+} ions with an equivalent dose of 10{sup 14} ions/cm{sup 2} to form the LBL logo. An exciting goal of this approach is the placement of single dopant ions into precise locations for integration of single atom devices, such as donor spin based quantum computers [3, 4]. In Fig. 3, we show a section of a micron size dot area exposed to a low dose (10{sup 11}/cm{sup 2}) of high charge state dopant ions. The Bi{sup 45+} ions (200 keV) were extracted from a low emittance highly charged ions source [5]. The potential energy of B{sup 45+}, i. e., the sum of the binding energies required to remove the electrons, amounts to 36 keV. This energy is deposited within {approx}10 fs when an ion impinges on a target. The highly localized energy deposition results in efficient resist exposure, and is associated with strongly enhanced secondary electron emission, which allows monitoring of single ion impacts [4]. The ex situ scanning probe image with line scan in Fig. 3 shows a single ion impact site in PMMA (after standard development). In our presentation, we will discuss resolution requirements for ion placement in prototype quantum computer structures [3] with respect to resolution limiting factors in ion implantation with scanning probe alignment
Transport of multiply and highly charged ions through nanoscale apertures in silicon nitride membranes
Mapping of ion beam induced current changes in FinFETs
We report on progress in ion placement into silicon devices with scanning
probe alignment. The device is imaged with a scanning force microscope (SFM)
and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor
surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of
1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to
formation of positive charges in the oxide areas. The induced changes in the
source-drain current are recorded in dependence of the ion beam position in
respect to the FinFET. Maps of local areas responding to the ion beam are
obtained.Comment: IBMM 2008 conference proceedin
Critical issues in the formation of quantum computer test structures by ion implantation
The formation of quantum computer test structures in silicon by ion
implantation enables the characterization of spin readout mechanisms with
ensembles of dopant atoms and the development of single atom devices. We
briefly review recent results in the characterization of spin dependent
transport and single ion doping and then discuss the diffusion and segregation
behaviour of phosphorus, antimony and bismuth ions from low fluence, low energy
implantations as characterized through depth profiling by secondary ion mass
spectrometry (SIMS). Both phosphorus and bismuth are found to segregate to the
SiO2/Si interface during activation anneals, while antimony diffusion is found
to be minimal. An effect of the ion charge state on the range of antimony ions,
121Sb25+, in SiO2/Si is also discussed
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