Enhanced carrier scattering rates in dilute magnetic semiconductors with correlated impurities

In III-V dilute magnetic semiconductors (DMSs) such as Ga$_{1-x}$Mn$_x$As, the impurity positions tend to be correlated, which can drastically affect the electronic transport properties of these materials. Within the memory function formalism we have derived a general expression for the current relaxation kernel in spin and charge disordered media and have calculated spin and charge scattering rates in the weak-disorder limit. Using a simple model for magnetic impurity clustering, we find a significant enhancement of the charge scattering. The enhancement is sensitive to cluster parameters and may be controllable through post-growth annealing.Comment: 4 pages, 3 figure

Optical properties of metallic (III,Mn)V ferromagnetic semiconductors in the infrared to visible range

We report on a study of the ac conductivity and magneto-optical properties of metallic ferromagnetic (III,Mn)V semiconductors in the infrared to visible spectrum. Our analysis is based on the successful kinetic exchange model for (III,Mn)V ferromagnetic semiconductors. We perform the calculations within the Kubo formalism and treat the disorder effects pertubatively within the Born approximation, valid for the metallic regime. We consider an eight-band Kohn-Luttinger model (six valence bands plus two conduction bands) as well as a ten-band model with additional dispersionless bands simulating phenomenologically the upper-mid-gap states induced by antisite and interstitial impurities. These models qualitatively account for optical-absorption experiments and predict new features in the mid-infrared Kerr angle and magnetic-circular-dichroism properties as a function of Mn concentration and free carrier density.Comment: 10 pages, 7 figures, some typos correcte

Carrier induced ferromagnetism in diluted magnetic semi-conductors

We present a theory for carrier induced ferromagnetism in diluted magnetic semi-conductor (DMS). Our approach treats on equal footing quantum fluctuations within the RPA approximation and disorder within CPA. This method allows for the calculation of $T_c$, magnetization and magnon spectrum as a function of hole, impurity concentration and temperature. It is shown that, sufficiently close to $T_c$, and within our decoupling scheme (Tyablicov type) the CPA for the itinerant electron gas reduces to the Virtual Crystal Approximation. This allows, in the low impurity concentration and low density of carriers to provide analytical expression for $T_c$. For illustration, we consider the case of $Ga_{1-c}Mn_{c}As$ and compare our results with available experimental data.Comment: 5 figures included. to appear in Phys. Rev. B (brief report

High-Temperature Hall Effect in Ga(1-x)Mn(x)As

The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the Curie-Weiss law, a spontaneous Hall coefficient proportional to rho_xx^2(T), and including a constant diamagnetic contribution in the susceptibility. For all low resistivity samples this model provides excellent fits to the measured data up to T=380K and allows extraction of the hole concentration (p). The calculated p are compared to alternative methods of determining hole densities in these materials: pulsed high magnetic field (up to 55 Tesla) technique at low temperatures (less than the Curie temperature), and electrochemical capacitance- voltage profiling. We find that the Anomalous Hall Effect (AHE) contribution to rho_xy is substantial even well above the Curie temperature. Measurements of the Hall effect in this temperature regime can be used as a testing ground for theoretical descriptions of transport in these materials. We find that our data are consistent with recently published theories of the AHE, but they are inconsistent with theoretical models previously used to describe the AHE in conventional magnetic materials.Comment: 6 pages, 5 figures, 1 table. Accepted to Phys.Rev.

Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films

We have performed a systematic investigation of magnetotransport of a series of as-grown and annealed Ga1-xMnxAs samples with 0.011 <= x <= 0.09. We find that the anisotropic magnetoresistance (AMR) generally decreases with increasing magnetic anisotropy, with increasing Mn concentration and on low temperature annealing. We show that the uniaxial magnetic anisotropy can be clearly observed from AMR for the samples with x >= 0.02. This becomes the dominant anisotropy at elevated temperatures, and is shown to rotate by 90o on annealing. We find that the in-plane longitudinal resistivity depends not only on the relative angle between magnetization and current direction, but also on the relative angle between magnetization and the main crystalline axes. The latter term becomes much smaller after low temperature annealing. The planar Hall effect is in good agreement with the measured AMR indicating the sample is approximately in a single domain state throughout most of the magnetisation reversal, with a two-step magnetisation jump ascribed to domain wall nucleation and propagation.Comment: 27 pages, 8 figures, accepted by Phys. Rev.

Theory of Magnetic Properties and Spin-Wave Dispersion for Ferromagnetic (Ga,Mn)As

We present a microscopic theory of the long-wavelength magnetic properties of the ferromagnetic diluted magnetic semiconductor (Ga,Mn)As. Details of the host semiconductor band structure, described by a six-band Kohn-Luttinger Hamiltonian, are taken into account. We relate our quantum-mechanical calculation to the classical micromagnetic energy functional and determine anisotropy energies and exchange constants. We find that the exchange constant is substantially enhanced compared to the case of a parabolic heavy-hole-band model.Comment: 9 pages, 4 figure

Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (<= 27 T) have been employed in order to determine the hole concentration p = 3.5x10^20 cm ^-3 of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic region was performed with the use of the above value of p, which gave the magnitude of p-d exchange energy |N0beta | ~ 1.5 eV.Comment: PDF file, 8 pages, 4 figure

Five Intermediate-Period Planets from the N2K Sample

We report the detection of five Jovian mass planets orbiting high metallicity stars. Four of these stars were first observed as part of the N2K program and exhibited low RMS velocity scatter after three consecutive observations. However, follow-up observations over the last three years now reveal the presence of longer period planets with orbital periods ranging from 21 days to a few years. HD 11506 is a G0V star with a planet of \msini = 4.74 \mjup in a 3.85 year orbit. HD 17156 is a G0V star with a 3.12 \mjup planet in a 21.2 day orbit. The eccentricity of this orbit is 0.67, one of the highest known for a planet with a relatively short period. The orbital period for this planet places it in a region of parameter space where relatively few planets have been detected. HD 125612 is a G3V star with a planet of \msini = 3.5 \mjup in a 1.4 year orbit. HD 170469 is a G5IV star with a planet of \msini = 0.67 \mjup in a 3.13 year orbit. HD 231701 is an F8V star with planet of 1.08 \mjup in a 142 day orbit. All of these stars have supersolar metallicity. Three of the five stars were observed photometrically but showed no evidence of brightness variability. A transit search conducted for HD 17156 was negative but covered only 25% of the search space and so is not conclusive.Comment: 13 pages, 9 figures, accepted ApJ Resubmitted here with some additional data, modified Keplerian orbit