Eliciting reflections on caring theory in elderly caring practice

Caring theories are the description and conceptualization of the care that is given in caring practise by nurses and other professional caregivers with the aim of verbalizing and communicating caring phenomena. Intermittently, a theory –practice gap is given expression- that theory does not go along with clinical practice in caring

Point defects generation kinetics in the Si-SiO2 system and its influence on the interface properties

It has been shown by means of EPR and NMR technique that at the Si-SiO 2 interface at appropriate oxidation temperature (time) local dynamical equilibrium may be achieved. At oxidation temperature 1130°C the dencity of point defects is less than at lower and higher temperature (1100°C and 1200°C) and the content of absorbed impurities (hydrogen, oxygen) diminishes. © (2011) Trans Tech Publications

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties

It has been shown by means of EPR and NMR technique that at the Si-SiO2 interface at appropriate oxidation temperature (time) local dynamical equilibrium may be achieved. At oxidation temperature 1130 °C the dencity of point defects is less than at lower and higher temperature (1100 °C and 1200 °C) and the content of absorbed impurities (hydrogen, oxygen) diminishes. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Interaction of point defects with impurities in the Si-SiO 2system and its influence on the interface properties

Point defect (PD) generation, redistribution and interaction with impurities in the Si-SiO2 system are studied during the formation process by electron paramagnetic resonance (EPR) and nuclear magnetic resonance (NMR) spectra. The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation conditions: temperature, cooling rate, oxidation time and impurity content. The difference between interface properties of n- and p-type wafers could be related to different Fermi level position at the interface and to different PD densities in the volume. © (2011) Trans Tech Publications, Switzerland