Effect of the Coulomb repulsion on the {\it ac} transport through a quantum dot

We calculate in a linear response the admittance of a quantum dot out of equilibrium. The interaction between two electrons with opposite spins simultaneously residing on the resonant level is modeled by an Anderson Hamiltonian. The electron correlations lead to the appearence of a new feature in the frequency dependence of the conductance. For certain parameter values there are two crossover frequencies between a capacitive and an inductive behavior of the imaginary part of the admittance. The experimental implications of the obtained results are briefly discussed.Comment: 13 pages, REVTEX 3.0, 2 .ps figures from [email protected], NUB-308

Microscopic theory of quantum-transport phenomena in mesoscopic systems: A Monte Carlo approach

A theoretical investigation of quantum-transport phenomena in mesoscopic systems is presented. In particular, a generalization to ``open systems'' of the well-known semiconductor Bloch equations is proposed. The presence of spatial boundary conditions manifest itself through self-energy corrections and additional source terms in the kinetic equations, whose form is suitable for a solution via a generalized Monte Carlo simulation. The proposed approach is applied to the study of quantum-transport phenomena in double-barrier structures as well as in superlattices, showing a strong interplay between phase coherence and relaxation.Comment: to appear in Phys. Rev. Let

Non Linear Current Response of a Many-Level Tunneling System: Higher Harmonics Generation

The fully nonlinear response of a many-level tunneling system to a strong alternating field of high frequency $\omega$ is studied in terms of the Schwinger-Keldysh nonequilibrium Green functions. The nonlinear time dependent tunneling current $I(t)$ is calculated exactly and its resonance structure is elucidated. In particular, it is shown that under certain reasonable conditions on the physical parameters, the Fourier component $I_{n}$ is sharply peaked at $n=\frac {\Delta E} {\hbar \omega}$, where $\Delta E$ is the spacing between two levels. This frequency multiplication results from the highly nonlinear process of $n$ photon absorption (or emission) by the tunneling system. It is also conjectured that this effect (which so far is studied mainly in the context of nonlinear optics) might be experimentally feasible.Comment: 28 pages, LaTex, 7 figures are available upon request from [email protected], submitted to Phys.Rev.

Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy

Dislocation-related conduction paths in n-type GaN grown by molecular-beam epitaxy and a mechanism for local suppression of current flow along these paths are analyzed using conductive atomic force microscopy, scanning Auger spectroscopy, and macroscopic current-voltage measurements. Application of an electric field at the GaN surface in an ambient atmospheric environment is shown to lead to local formation of gallium oxide in the immediate vicinity of the conduction paths, resulting in the strong suppression of subsequent current flow. Current-voltage measurements for Schottky diodes in which local conduction paths have been suppressed in this manner exhibit reverse-bias leakage currents reduced by two to four orders of magnitude compared to those in Schottky diodes not subjected to any surface modification process. These results demonstrate that the dislocation-related current leakage paths are the dominant source of leakage current in Schottky contacts to n-type GaN grown by molecular-beam epitaxy, and elucidate the nature of a microscopic process for their suppression. (C) 2003 American Institute of Physics

Citizen science breathes new life into participatory agricultural research : A review

Participatory research can improve the efficiency, effectiveness, and scope of research processes, and foster social inclusion, empowerment and sustainability. Yet despite four decades of agricultural research institutions exploring and developing methods for participatory research, it has never become mainstream in the agricultural technology development cycle. Citizen science promises an innovative approach to participation in research, using the unique facilities of new digital technologies, but its potential in agricultural research participation has not been systematically probed. To this end, we conducted a critical literature review. We found that citizen science opens up four opportunities for creatively reshaping research: i) new possibilities for interdisciplinary collaboration, ii) rethinking configurations of socio-computational systems, iii) research on democratization of science more broadly, and iv) new accountabilities. Citizen science also brings a fresh perspective on the barriers to institutionalizing participation in the agricultural sciences. Specifically, we show how citizen science can reconfigure cost-motivation-accountability combinations using digital tools, open up a larger conceptual space of experimentation, and stimulate new collaborations. With appropriate and persistent institutional support and investment, citizen science can therefore have a lasting impact on how agricultural science engages with farming communities and wider society, and more fully realize the promises of participation

Semiconductor Spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.Comment: tutorial review; 342 pages, 132 figure