Concept, realization and characterization of serially powered pixel modules

We prove and demonstrate here for the example of the large scale pixel detector of ATLAS that Serial Powering of pixel modules is a viable alternative and that has been devised and implemented for ATLAS pixel modules using dedicated on-chip voltage regulators and modified flex hybrids circuits. The equivalent of a pixel ladder consisting of six serially powered pixel modules with about 0.3Mpixels has been built and the performance with respect to noise and threshold stability and operation failures has been studied. We believe that Serial Powering in general will be necessary for future large scale tracking detectors

Characterization and Modeling of Non-Uniform Charge Collection in CVD Diamond Pixel Detectors

A pixel detector with a CVD diamond sensor has been studied in a 180 GeV/c pion beam. The charge collection properties of the diamond sensor were studied as a function of the track position, which was measured with a silicon microstrip telescope. Non-uniformities were observed on a length scale comparable to the diamond crystallites size. In some regions of the sensor, the charge drift appears to have a component parallel to the sensor surface (i.e., normal to the applied electric field) resulting in systematic residuals between the track position and the hits position as large as 40 $\mu$m. A numerical simulation of the charge drift in polycrystalline diamond was developed to compute the signal induced on the electrodes by the electrons and holes released by the passing particles. The simulation takes into account the crystallite structure, non-uniform trapping across the sensor, diffusion and polarization effects. It is in qualitative agreement with the data. Additional lateral electric field components result from the non-uniform trapping of charges in the bulk. These provide a good explanation for the large residuals observed.Comment: Accepted by Nucl. Instr. and Met

System Tests of the ATLAS Pixel Detector

The innermost part of the ATLAS (A Toroidal LHC ApparatuS) experiment at the LHC (Large Hadron Collider) will be a pixel detector, which is presently under construction. Once installed into the experimental area, access will be extremely limited. To ensure that the integrated detector assembly operates as expected, a fraction of the detector which includes the power supplies and monitoring system, the optical readout, and the pixel modules themselves, has been assembled and operated in a laboratory setting for what we refer to as system tests. Results from these tests are presented.Comment: 5 Pages, 9 Figures, to appear in Proceedings of the Eleventh Workshop on Electronics for LHC and Future Experiment

HV/HR-CMOS sensors for the ATLAS upgrade—concepts and test chip results

In order to extend its discovery potential, the Large Hadron Collider (LHC) will have a major upgrade (Phase II Upgrade) scheduled for 2022. The LHC after the upgrade, called High-Luminosity LHC (HL-LHC), will operate at a nominal leveled instantaneous luminosity of 5× 1034 cm−2 s−1, more than twice the expected Phase I . The new Inner Tracker needs to cope with this extremely high luminosity. Therefore it requires higher granularity, reduced material budget and increased radiation hardness of all components. A new pixel detector based on High Voltage CMOS (HVCMOS) technology targeting the upgraded ATLAS pixel detector is under study. The main advantages of the HVCMOS technology are its potential for low material budget, use of possible cheaper interconnection technologies, reduced pixel size and lower cost with respect to traditional hybrid pixel detector. Several first prototypes were produced and characterized within ATLAS upgrade R&D effort, to explore the performance and radiation hardness of this technology. In this paper, an overview of the HVCMOS sensor concepts is given. Laboratory tests and irradiation tests of two technologies, HVCMOS AMS and HVCMOS GF, are also given

Radiation-hard active pixel sensors for HL-LHC detector upgrades based on HV-CMOS technology

Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown

3D electronics for hybrid pixel detectors – TWEPP-09

Future hybrid pixel detectors are asking for smaller pixels in order to improve spatial resolution and to deal with an increasing counting rate. Facing these requirements is foreseen to be done by microelectronics technology shrinking. However, this straightforward approach presents some disadvantages in term of performances and cost. New 3D technologies offer an alternative way with the advantage of technology mixing. For the upgrade of ATLAS pixel detector, a 3D conception of the read-out chip appeared as an interesting solution. Splitting the pixel functionalities into two separate levels will reduce pixel size and open the opportunity to take benefit of technology's mixing. Based on a previous prototype of the read-out chip FE-I4 (IBM 130nm), this paper presents the design of a hybrid pixel read-out chip using threedimensional Tezzaron-Chartered technology. In order to disentangle effects due to Chartered 130nm technology from effects involved by 3D architecture, a first translation of FEI4 prototype had been designed at the beginning of this year in Chartered 2D technology, and first test results will be presented in the last part of this paper

Characterization of a Single Crystal Diamond Pixel Detector in a High Energy Particle Beam

Diamond has been developed as a material for the detection of charged particles by ionization. Its radiation hardness makes it an attractive material for detectors operated in a harsh radiation environment e.g. close to a particle beam as is the case for beam monitoring and for pixel vertex detectors. Poly-crystalline chemical vapor deposition (CVD) diamond has been studied as strip and pixel detectors so far. We report on a first-time characterization of a single-crystal diamond pixel detector in a 100 GeV particle beam at CERN. The detectors are made from irregularly shaped single crystal sensors, 395mm thick, mated by bump bonding to a front-end readout IC as used in the ATLAS pixel detector with pixel sizes of 50 x 400 mm2. The diamond sensors show excellent charge collection properties: full collection over the entire detector volume, clean and narrow signal charge distributions with a S/N value of >100 and a hit detection efficiency of (99.9 +- 0.1)%. The measured spatial resolution for particles under normal incidence in the shorter pixel direction is (8.9 +- 0.1) um.Comment: 11 pages, 9 figure

Belle II Technical Design Report

The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been proposed. A new international collaboration Belle-II, is being formed. The Technical Design Report presents physics motivation, basic methods of the accelerator upgrade, as well as key improvements of the detector.Comment: Edited by: Z. Dole\v{z}al and S. Un

Colour reconnection in e+e- -> W+W- at sqrt(s) = 189 - 209 GeV

The effects of the final state interaction phenomenon known as colour reconnection are investigated at centre-of-mass energies in the range sqrt(s) ~ 189-209 GeV using the OPAL detector at LEP. Colour reconnection is expected to affect observables based on charged particles in hadronic decays of W+W-. Measurements of inclusive charged particle multiplicities, and of their angular distribution with respect to the four jet axes of the events, are used to test models of colour reconnection. The data are found to exclude extreme scenarios of the Sjostrand-Khoze Type I (SK-I) model and are compatible with other models, both with and without colour reconnection effects. In the context of the SK-I model, the best agreement with data is obtained for a reconnection probability of 37%. Assuming no colour reconnection, the charged particle multiplicity in hadronically decaying W bosons is measured to be (nqqch) = 19.38+-0.05(stat.)+-0.08 (syst.).Comment: 30 pages, 9 figures, Submitted to Euro. Phys. J.