Process Development of Silicon Heterojunction Interdigitated Back-Contacted (SHJ-IBC) Solar Cells Bonded to Glass

In imec’s i2-module concept, silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells are fabricated on monocrystalline foils bonded to glass. The proposed technology allows for cell processing on thin wafers mechanically supported by the glass, increasing the yield of processing such thin wafers. A process sequence for SHJ-IBC cell fabrication that can be applied to bonded thin foils is described. We investigated and optimized individual process steps on thick wafers. Then the developed steps were integrated into a process flow to fabricate solar cells on wafers with different thicknesses and bonding agents. On wafers with a thickness of 190 μm, functional cells with efficiencies of 22.6% and 21.7% were made on freestanding and silicone bonded wafers, respectively. On thin wafers of 57 μm, our best SHJ-IBC cell on an EVA bonded wafer exhibits excellent Voc of 740 mV and efficiency of 20.0%, which demonstrates the high potential of the i2-module concept

Simple emitter patterning of silicon heterojunction interdigitated back-contact solar cells using damage-free laser ablation

© 2018 Elsevier B.V. In early 2017, the world record efficiency for single-junction crystalline silicon (c-Si) solar cells was achieved by merging amorphous silicon (a-Si:H)/c-Si heterojunction technology and back-contact architecture. However, to fabricate such silicon heterojunction interdigitated back-contact (SHJ-IBC) solar cells, complex a-Si:H patterning steps are required to form the interdigitated a-Si:H strips at the back side of the devices. This fabrication complexity raises concerns about the commercial potential of such devices. In this work, a novel process scheme for a-Si:H patterning using damage-free laser ablation is presented, leading to a fast, simple and photolithography-free emitter patterning approach for SHJ-IBC solar cells. To prevent laser-induced damage to the a-Si:H/c-Si heterocontact, an a-Si:H laser-absorbing layer and a dielectric mask are deposited on top of the a-Si:H/c-Si. Laser ablation only removes the top a-Si:H layer, reducing laser damage to the bottom a-Si:H/c-Si heterocontact under the dielectric mask. This dielectric mask is a distributed Bragg reflector (DBR), resulting in a high reflectance of 80% at the laser wavelength and thus providing additional protection to the a-Si:H/c-Si heterocontact. Using such simple a-Si:H patterning method, a proof-of concept 4-cm2 SHJ-IBC solar cell with an efficiency of up to 22.5% is achieved.status: publishe

Simple emitter patterning of silicon heterojunction interdigitated back-contact solar cells using damage-free laser ablation

In early 2017, the world record efficiency for single-junction crystalline silicon (c-Si) solar cells was achieved by merging amorphous silicon (a-Si:H)/c-Si heterojunction technology and back-contact architecture. However, to fabricate such silicon heterojunction interdigitated back-contact (SHJ-IBC) solar cells, complex a-Si:H patterning steps are required to form the interdigitated a-Si:H strips at the back side of the devices. This fabrication complexity raises concerns about the commercial potential of such devices. In this work, a novel process scheme for a-Si:H patterning using damage-free laser ablation is presented, leading to a fast, simple and photolithography-free emitter patterning approach for SHJ-IBC solar cells. To prevent laser-induced damage to the a-Si:H/c-Si heterocontact, an a-Si:H laser-absorbing layer and a dielectric mask are deposited on top of the a-Si:H/c-Si. Laser ablation only removes the top a-Si:H layer, reducing laser damage to the bottom a-Si:H/c-Si heterocontact under the dielectric mask. This dielectric mask is a distributed Bragg reflector (DBR), resulting in a high reflectance of 80% at the laser wavelength and thus providing additional protection to the a-Si:H/c-Si heterocontact. Using such simple a-Si:H patterning method, a proof-of concept 4-cm(2) SHJ-IBC solar cell with an efficiency of up to 22.5% is achieved.The authors gratefully acknowledge the financial support of IMEC's Industrial Affiliation Program for Si-PV. This project has also received funding from the European Union's Horizon 2020 Research and Innovation Programme under grant agreement no. 727523 (NextBase).Silicon heterojunction; Amorphous silicon; Solar cells; Interdigitated back-contact; Laser ablation; Patternin

Optimization Methodology for Reconfigurable PV Modules

Reconfigurable photovoltaic modules represent an effective solution to improve PV system resilience to partial shading. Indeed, the availability of different configurations increases energy generation under non-uniform conditions. However, the additional components that are active under uniform conditions lead to higher losses compared to equivalent static solutions. This paper presents a methodology for the design of optimized reconfigurable PV modules, balancing losses under uniform conditions and gain under partial shading. First, feasible reconfigurable module instantiations are selected given some design constraints. Then, the search space is further reduced by taking into account the typical operating conditions of the module. Finally, the best module layouts are chosen based on performance consideration. Results for a specific case study are presented to show the feasibility of the proposed methodology.European Union [751159]Topology; Layout; Production; Optimization; Standards; Simulatio

Selective deposition of a-Si:H: a proof-of-concept study

We present a novel approach to simplify the rearside a-Si:H patterning of silicon heterojunction interdigitated back-contact solar cells. In our current process, laser ablation and lift-off are used. Since lift-off is not industrially-viable, we propose to replace it with a selective deposition process which ensures a-Si: H is realised only on c-Si surface and not on the SiOx mask, at the end of the process, based on cycles of a-Si: H deposition and etching. While neither the deposition nor the etching is truly selective, this method relies on the difference of a-Si: H etch rates on c-Si and SiOx surfaces to achieve selectivity as the net end-result. The main challenge is addressing the trade-off between selectivity and c-Si surface passivation.imec's industrial affiliation program for Si-PV; European Union's Horizon 2020 research and innovation programme [727523]Etching; Silicon; Photovoltaic cells; Dielectrics; Heterojunctions; Substrate

Efficiency gain in plated bifacial n-type PERT cells by means of a selective emitter approach using selective epitaxy

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Periodic inverse nanopyramid gratings for light management in silicon heterojunction devices and comparison with random pyramid texturing

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Infrared Absorption Enhancement Using Periodic Inverse Nanopyramids in Crystalline-Silicon Bottom Cells for Application in Tandem Devices

Carefully tailored periodic nanostructures on the light wavelength scale, such as diffraction gratings, benefit from wave optics for efficiently trapping the weakly absorbing infrared photons in crystalline-silicon (c-Si) absorbers. In contrast with the conventional random pyramid texture, diffraction gratings can be designed to target specific wavelength ranges by the selection of the grating pitch. Absorption enhancement at infrared wavelengths in a silicon solar cell is especially desired when it operates below a perovskite top cell in a tandem device. In this article, inverse nanopyramid gratings of 800 nm pitch are proposed as an alternative front-surface texture to random pyramids in silicon heterojunction devices with interdigitated back contacts that are to be used as bottom cells in four-terminal perovskite/c-Si tandem devices. By doing so, we report a short-circuit current density gain of 0.53 mA/cm 2 with respect to the random pyramid texturing for the bottom c-Si cell. The rationale to substitute random pyramids by inverse nanopyramid gratings is, however, not justified in single-junction operation despite achieving the power conversion efficiency of 22.3% since the degraded optical performance at shorter wavelengths offsets the absorption enhancement at longer wavelengths, resulting in similar levels of short-circuit current densities for both texture types.status: Published onlin

A novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%

© 2019 John Wiley & Sons, Ltd. We present a novel process sequence to simplify the rear-side patterning of the silicon heterojunction interdigitated back contact (HJ IBC) cells. In this approach, interdigitated strips of a-Si:H (i/p + ) hole contact and a-Si:H (i/n + ) electron contact are achieved by partially etching a blanket a-Si:H (i/p + ) stack through an SiO x hard mask to remove only the p + a-Si:H layer and replace it with an n + a-Si:H layer, thereby switching from a hole contact to an electron contact in situ, without having to remove the entire passivation. This eliminates the ex situ wet clean after dry etching and also prevents re-exposure of the crystalline silicon surface during rear-side processing. Using a well-controlled process, high-quality passivation is maintained throughout the rear-side process sequence leading to high open-circuit voltages (V OC ). A slightly higher contact resistance at the electron contact leads to a slightly higher fill factor (FF) loss due to series resistance for cells from the partial etch route, but the FF loss due to J 02 -type recombination is lower, compared with reference cells. As a result, the best cell from the partial etch route has an efficiency of 22.9% and a V OC of 729 mV, nearly identical to the best reference cell, demonstrating that the developed partial etch process can be successfully implemented to achieve cell performance comparable with reference, but with a simpler, cheaper, and faster process sequence.status: publishe