On Minimum-time Paths of Bounded Curvature with Position-dependent Constraints

We consider the problem of a particle traveling from an initial configuration to a final configuration (given by a point in the plane along with a prescribed velocity vector) in minimum time with non-homogeneous velocity and with constraints on the minimum turning radius of the particle over multiple regions of the state space. Necessary conditions for optimality of these paths are derived to characterize the nature of optimal paths, both when the particle is inside a region and when it crosses boundaries between neighboring regions. These conditions are used to characterize families of optimal and nonoptimal paths. Among the optimality conditions, we derive a "refraction" law at the boundary of the regions that generalizes the so-called Snell's law of refraction in optics to the case of paths with bounded curvature. Tools employed to deduce our results include recent principles of optimality for hybrid systems. The results are validated numerically.Comment: Expanded version of paper in Automatic

Heterostructure unipolar spin transistors

We extend the analogy between charge-based bipolar semiconductor electronics and spin-based unipolar electronics by considering unipolar spin transistors with different equilibrium spin splittings in the emitter, base, and collector. The current of base majority spin electrons to the collector limits the performance of ``homojunction'' unipolar spin transistors, in which the emitter, base, and collector all are made from the same magnetic material. This current is very similar in origin to the current of base majority carriers to the emitter in homojunction bipolar junction transistors. The current in bipolar junction transistors can be reduced or nearly eliminated through the use of a wide band gap emitter. We find that the choice of a collector material with a larger equilibrium spin splitting than the base will similarly improve the device performance of a unipolar spin transistor. We also find that a graded variation in the base spin splitting introduces an effective drift field that accelerates minority carriers through the base towards the collector.Comment: 9 pages, 2 figure

Further investigation of a contactless patient-electrode interface of an Electrical Impedance Mammography system

The Sussex Mk4 Electrical Impedance Mammography (EIM) system is a novel instrument, designed for the detection of early breast cancer, based upon Electrical Impedance Tomography (EIT). Many innovations in the field have been incorporated in the design improving both signal distribution and response. This paper investigates the behaviour of the contactless patient-electrode interface. The interface was studied in detail using phantom and healthy volunteer, in-vivo, data. Our findings show the necessity for the careful design of electrode enclosure so that the response of the system is not affected by the unpredictable positioning of the breast; it closely mimics those conditions seen when using the phantom. The paper includes a number of possible designs and their individual characteristics. In addition an explanation on the unanticipated effects and solutions for such are described. © 2010 IOP Publishing Ltd

Electrical transport across Au/Nb:SrTiO3 Schottky interface with different Nb doping

We have investigated electron transport in Nb doped SrTiO$_3$ single crystals for two doping densities. We find that the resistivity and mobility are temperature dependent in both whereas the carrier concentration is almost temperature invariant. We rationalize this using the hydrogenic theory for shallow donors. Further, we probe electrical transport across Schottky interfaces of Au on TiO$_2$ terminated n-type SrTiO$_3$. Quantitative analysis of macroscopic I-V measurements reveal thermionic emission dominated transport for the low doped substrate whereas it deviates from such behavior for the high doped substrate. This work is relevant for designing devices to study electronic transport using oxide-semiconductors.Comment: 10 Pages, 3 Figure

Dipole trap model for the metallic state in gated silicon-inversion layers

In order to investigate the metallic state in high-mobility Si-MOS structures, we have further developed and precised the dipole trap model which was originally proposed by B.L. Altshuler and D.L. Maslov [Phys. Rev. Lett.\ 82, 145 (1999)]. Our additional numerical treatment enables us to drop several approximations and to introduce a limited spatial depth of the trap states inside the oxide as well as to include a distribution of trap energies. It turns out that a pronounced metallic state can be caused by such trap states at appropriate energies whose behavior is in good agreement with experimental observations.Comment: 16 pages, 10 figures, submitte

The development of a model to infer precipitation from microwave measurements

To permit the inference of precipitation amounts from radiometric measurements, a radiative interaction model was developed. This model uses a simple computational scheme to determine the effects of rain upon brightness temperatures and can be used with a statistical inversion procedure to invert for rain rate. Precipitating cloud models was also developed and used with the microwave model for frequencies of 19.35 and 37 GHz to determine the variability of the microwave-rain rate relationship on a global and seasonal basis

Superconducting Quantum Point contacts and Maxwell Potential

The quantization of the current in a superconducting quantum point contact is reviewed and the critical current is discussed at different temperatures depending on the carrier concentration as well by suggesting a constant potential in the semiconductor and then a Maxwell potential. When the Fermi wave length is comparable with the constriction width we showed that the critical current has a step-like variation as a function of the constriction width and the carrier concentration.Comment: 13 pages, 8 figures, some figures are clarified; scheduled to appear in an issue in MPLB Vo.21, (2007

Complete spin polarization of electrons in semiconductor layers and quantum dots

We demonstrate that non-equilibrium electrons in thin nonmagnetic semiconductor layers or quantum dots can be fully spin polarized by means of simultaneous electrical spin injection and extraction. The complete spin polarization is achieved if the thin layers or quantum dots are placed between two ferromagnetic metal contacts with moderate spin injection coefficients and antiparallel magnetizations. The sign of the spin polarization is determined by the direction of the current. Aplications of this effect in spintronics and quantum information processing are discussed

Automated composite ellipsoid modelling for high frequency GTD analysis

The preliminary results of a scheme currently being developed to fit a composite ellipsoid to the fuselage of a helicopter in the vicinity of the antenna location are discussed under the assumption that the antenna is mounted on the fuselage. The parameters of the close-fit composite ellipsoid would then be utilized as inputs into NEWAIR3, a code programmed in FORTRAN 77 for high frequency Geometrical Theory of Diffraction (GTD) Analysis of the radiation of airborne antennas

High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins

New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is described. The FM-S-FM structure is considered, which includes very thin heavily doped (delta-doped) layers at FM-S interfaces. At certain parameters the structure is highly sensitive at room-temperature to variations of the field with frequencies up to 100 GHz. The current oscillates with the field, and its relative amplitude is determined only by the spin polarizations of FM-S junctions at relatively large bias voltage.Comment: 5 pages, 2 figures, (v2) new plot with a dependence of current J on magnetic field H added in Fig.2 (top panel), minor amendments in the text; (v3) minor typos corrected. To appear in Phys. Rev. Letter