Signal processor architecture for backscatter radars

Real time signal processing for backscatter radars which requires computational throughput and I/O rates is discussed. The operations that are usually performed in real time are highly repetitive simple accumulations of samples or of products of samples. The control logic does not depend on the values of the data and general purpose computers are not required for the initial high speed processing. The implications of these facts on the architectures of preprocessors for backscatter radars are explored and applied to the design of the Radar Signal Compender

UHF and VHF radar observations of thunderstorms

A study of thunderstorms was made in the Summer of 1985 with the 430-MHz and 50-MHz radars at the Arecibo Observatory in Puerto Rico. Both radars use the 300-meter dish, which gives a beam width of less than 2 degrees even at these long wavelengths. Though the radars are steerable, only vertical beams were used in this experiment. The height resolution was 300 and 150 meters for the UHF and VHF, respectively. Lightning echoes, as well as returns from precipitation and clear-air turbulence were detected with both wavelengths. Large increases in the returned power were found to be coincident with increasing downward vertical velocities at UHF, whereas at VHF the total power returned was relatively constant during the life of a storm. This was attributed to the fact that the VHF is more sensitive to scattering from the turbulence-induced inhomogeneities in the refractive index and less sensitive to scatter from precipitation particles. On occasion, the shape of the Doppler spectra was observed to change with the occurrence of a lightning discharge in the pulse volume. Though the total power and mean reflectivity weighted Doppler velocity changed little during these events, the power is Doppler frequency bins near that corresponding to the updraft did increase substantially within a fraction of a second after a discharge was detected in the beam. This suggests some interaction between precipitation and lightning

Performance of epitaxial back surface field cells

Epitaxial back surface field structures were formed by depositing a 10 micron thick 10 Omega-cm epitaxial silicon layer onto substrates with resistivities of 0.01, 0.1, 1.0 and 10 Omega-cm. A correlation between cell open-circuit voltage and substrate resistivity was observed and was compared to theory. The cells were also irradiated with 1 MeV electrons to a fluence of 5 X 10 to the 15th power e/cm2. The decrease of cell open-circuit voltage was in excellent agreement with theoretical predictions and the measured short circuit currents were within 2% of the prediction. Calculations are presented of optimum cell performance as functions of epitaxial layer thickness, radiation fluence and substrate diffusion length

The Move toward a Cashless Society: A Closer Look at Payment Instrument Economics

Ever since the first general-purpose charge card debuted in the early 1950s, pundits have been predicting the "cashless society." Over fifty years later, we may finally be getting close to that vision. This study is the first to examine empirically the move toward a cashless society using a cost-benefit framework. We find that when all key parties to a transaction are considered and benefits are added, cash and checks are more costly than many earlier studies suggest. In general, the shift toward a cashless society appears to be a beneficial one.

Ionospheric research - Diurnal variation of the neutral temperature profile at Arecibo from incoherent scatter measurements and its relevance to the 1400 hour density maximum

Diurnal variation of neutral temperature profile at Arecibo from incoherent scattering measurements and its revelance to 1400 hour density maximu

The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance

Effects of processing and dopant on radiation damage removal in silicon solar cells

Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation

Amygdala reactivity predicts adolescent antisocial behavior but not callous-unemotional traits.

Recent neuroimaging studies have suggested divergent relationships between antisocial behavior (AB) and callous-unemotional (CU) traits and amygdala reactivity to fearful and angry facial expressions in adolescents. However, little work has examined if these findings extend to dimensional measures of behavior in ethnically diverse, non-clinical samples, or if participant sex, ethnicity, pubertal stage, and age moderate associations. We examined links between amygdala reactivity and dimensions of AB and CU traits in 220 Hispanic and non-Hispanic Caucasian adolescents (age 11-15; 49.5% female; 38.2% Hispanic), half of whom had a family history for depression and thus were at relatively elevated risk for late starting, emotionally dysregulated AB. We found that AB was significantly related to increased right amygdala reactivity to angry facial expressions independent of sex, ethnicity, pubertal stage, age, and familial risk status for depression. CU traits were not related to fear- or anger-related amygdala reactivity. The present study further demonstrates that AB is related to increased amygdala reactivity to interpersonal threat cues in adolescents, and that this relationship generalizes across sex, ethnicity, pubertal stage, age, and familial risk status for depression

Radiation damage in lithium-counterdoped n/p silicon solar cells

Lithium counterdoped n+/p silicon solar cells were irradiated with 1 MV electrons and their post irradiation performance and low temperature annealing properties were compared to that of the 0.35 ohm cm control cells. Cells fabricated from float zone and Czochralski grown silicon were investigated. It was found that the float zone cells exhibited superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Room temperature and 60 C annealing studies were conducted. The annealing was found to be a combination of first and second order kinetics for short times. It was suggested that the principal annealing mechanism was migration of lithium to a radiation induced defect with subsequent neutralization of the defect by combination with lithium. The effects of base lithium gradient were investigated. It was found that cells with negative base lithium gradients exhibited poor radiation resistance and performance compared to those with positive or no lithium gradients; the latter being preferred for overall performance and radiation resistance