11,366 research outputs found

    Temperature and intensity dependence of the performance of an electron-irradiated (AlGa)As/GaAs solar cell

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    The performance of a Hughes, liquid-phase epitaxial 2 centimeter-by-2 centimeter, (AlGa)As/GaAs solar cell was measured before and after irradiations with 1 MeV electrons to fluences of 1 x 10 to the 16th power electrons/sq cm. The temperature dependence of performance was measured over the temperature range 135 to 415 K at each fluence level. In addition, temperature dependences were measured at five intensity levels from 137 to 2.57 mW/sq cm before irradiation and after a fluence of 1 x 10 to the 16th power electrons/sq cm. For the intermediate fluences, performance was measured as a function of intensity at 298 K only

    Comparative radiation testing of solar cells for the shuttle power extension package

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    The Power Extension Package (PEP) is the prime focus of a development program to produce low cost solar cells. The PEP is a 32 kilowatt flexible substrate, retrievable, solar array system for use on the Space Shuttle. Solar cell cost will be reduced by increasing cell area and simplifying cell and coverglass fabrication processes and specifications. The cost goal is to produce cells below $30 per watt. Two and ten ohm-cm silicon cells were investigated. This paper describes a unique radiation damage test and side-by-side comparison of candidate cell types with pre-and post-irradiation airplane calibration of outer space short-circuit current

    Preliminary evaluation of Glass Resin materials for solar cell cover use

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    The glass resins were deposited by several techniques on 200 micron thick cells and on 50 microns thick wafers. The covered cells were exposed to ultraviolet light in vacuum to an intensity of 10 UV energy-equivalent solar constants at air mass zero for 728 hr. The exposure was followed by a single long thermal cycle from ambient temperature to -150 C. Visual inspection of the samples indicated that all samples had darkened to varying degrees. The loss in short-circuit current was found to range from 8 to 24%, depending on the resin formulation. In another test over 40 glass resin-coated silicon wafers withstood 15 thermal cycles from 100 to-196 C in one or more of the thicknesses tested. Several of the resin-coated wafers were tested at 65 C and 90% relative humidity for 170 hr. No change in physical appearance was detected

    Covalent Labeling of Proteins with Fluorescent Compounds for Imaging Applications

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    The labeling of proteins with fluorescent compounds for microscopy has allowed a greater understanding of biological processes. The preparation of fluorescent proteins is the first step in development of their use in microscopy. Methods are described to label and characterize a protein as an example of the general approach for other proteins. Skeletal muscle alpha-actinin was labeled with either fluorescein-5-maleimide or 5-iodoaceamidofluorescein and the reaction characterized. The maleimide reaction was much more rapid and efficient than the iodoacetamide reaction giving a coupling efficiency of 65% under the given ration conditions. The fluorescein-5-maleimide alpha-actinin was functionally characterized and there was essentially no influence on the fluorescein label on the F-actin binding properties of alpha-actinin. The fluorescein alpha-actinin was also shown to specifically bind to the Z-line of isolated myofibrils. A general outline and discussion are presented on how to label and characterize proteins for use in microscopy

    Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells

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    The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations

    Indium phosphide solar cell research in the US: Comparison with nonphotovoltaic sources

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    Highlights of the InP solar cell research program are presented. Homojunction cells with AMO efficiences approaching 19 percent were demonstrated while 17 percent was achieved for indium tin oxide (ITO)/InP cells. The superior radiation resistance of these latter two cell configurations over both Si and GaAs were demonstrated. InP cells on board the LIPS III satellite show no degradation after more than a year in orbit. Computer modeling calculations were directed toward radiation damage predictions and the specification of concentrator cell parameters. Computed array specific powers, for a specific orbit, are used to compare the performance of an InP solar cell array to solar dynamic and nuclear systems

    Progress in indium phosphide solar cell research

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    Progress, dating from the start of the Lewis program, is reviewed emphasizing processing techniques which have achieved the highest efficiencies in a given year. To date, the most significant achievement has been attainment of AM0 total area efficiencies approaching 19 percent. Although closed tube diffusion is not considered to be an optimum process, reasonably efficient 2cm x 2cm and 1cm x 2cm InP cells have been produced in quantity by this method with a satellite to be launched in 1990 using these cells. Proton irradiation of these relatively large area cells indicates radiation resistance comparable to that previously reported for smaller InP cells. A similar result is found for the initial proton irradiations of ITO/InP cells processed by D. C. sputtering. With respect to computer modelling, a comparison of n/p homojunction InP and GaAs cells of identical geometries and dopant concentrations has confirmed the superior radiation resistance of InP cells under 1 MeV electron irradiations

    Existentialism and Social Meaning: The Development of a Social Being

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    Individuals are defined by their beliefs. A tension exists in the development of personhood between the concepts of individually chosen existential meaning, and societally imposed social meaning. The essay explores these concepts and how an individuals is to navigate a world of meaning. Ultimately, the creation of art is examined as a means of creating new meaning individually and societally
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