8,293 research outputs found
ON THE GEOMETRY OF THE X-RAY EMITTING REGION IN SEYFERT GALAXIES
For the first time, detailed radiative transfer calculations of Comptonized
X-ray and gamma-ray radiation in a hot pair plasma above a cold accretion disk
are performed using two independent codes and methods. The simulations include
both energy and pair balance as well as reprocessing of the X- and gamma-rays
by the cold disk. We study both plane-parallel coronae as well as active
dissipation regions having shapes of hemispheres and pill boxes located on the
disk surface. It is shown, contrary to earlier claims, that plane-parallel
coronae in pair balance have difficulties in selfconsistently reproducing the
ranges of 2-20 keV spectral slopes, high energy cutoffs, and compactnesses
inferred from observations of type 1 Seyfert galaxies. Instead, the
observations are consistent with the X-rays coming from a number of individual
active regions located on the surface of the disk.
A number of effects such as anisotropic Compton scattering, the reflection
hump, feedback to the soft photon source by reprocessing, and an active region
in pair equilibrium all conspire to produce the observed ranges of X-ray
slopes, high energy cutoffs, and compactnesses. The spread in spectral X-ray
slopes can be due to a spread in the properties of the active regions such as
their compactnesses and their elevations above the disk surface. Simplified
models invoking isotropic Comptonization in spherical clouds are no longer
sufficient when interpreting the data.Comment: 9 pages, 3 postscript figures, figures can be obtained from the
authors via e-mail: [email protected]
InAs nanowire transistors with multiple, independent wrap-gate segments
We report a method for making horizontal wrap-gate nanowire transistors with
up to four independently controllable wrap-gated segments. While the step up to
two independent wrap-gates requires a major change in fabrication methodology,
a key advantage to this new approach, and the horizontal orientation more
generally, is that achieving more than two wrap-gate segments then requires no
extra fabrication steps. This is in contrast to the vertical orientation, where
a significant subset of the fabrication steps needs to be repeated for each
additional gate. We show that cross-talk between adjacent wrap-gate segments is
negligible despite separations less than 200 nm. We also demonstrate the
ability to make multiple wrap-gate transistors on a single nanowire using the
exact same process. The excellent scalability potential of horizontal wrap-gate
nanowire transistors makes them highly favourable for the development of
advanced nanowire devices and possible integration with vertical wrap-gate
nanowire transistors in 3D nanowire network architectures.Comment: 18 pages, 5 figures, In press for Nano Letters (DOI below
Pareto Optimal Matchings in Many-to-Many Markets with Ties
We consider Pareto-optimal matchings (POMs) in a many-to-many market of
applicants and courses where applicants have preferences, which may include
ties, over individual courses and lexicographic preferences over sets of
courses. Since this is the most general setting examined so far in the
literature, our work unifies and generalizes several known results.
Specifically, we characterize POMs and introduce the \emph{Generalized Serial
Dictatorship Mechanism with Ties (GSDT)} that effectively handles ties via
properties of network flows. We show that GSDT can generate all POMs using
different priority orderings over the applicants, but it satisfies truthfulness
only for certain such orderings. This shortcoming is not specific to our
mechanism; we show that any mechanism generating all POMs in our setting is
prone to strategic manipulation. This is in contrast to the one-to-one case
(with or without ties), for which truthful mechanisms generating all POMs do
exist
Money in monetary policy design: monetary cross-checking in the New-Keynesian model
In the New-Keynesian model, optimal interest rate policy under uncertainty is formulated without reference to monetary aggregates as long as certain standard assumptions on the distributions of unobservables are satisfied. The model has been criticized for failing to explain common trends in money growth and inflation, and that therefore money should be used as a cross-check in policy formulation (see Lucas (2007)). We show that the New-Keynesian model can explain such trends if one allows for the possibility of persistent central bank misperceptions. Such misperceptions motivate the search for policies that include additional robustness checks. In earlier work, we proposed an interest rate rule that is near-optimal in normal times but includes a cross-check with monetary information. In case of unusual monetary trends, interest rates are adjusted. In this paper, we show in detail how to derive the appropriate magnitude of the interest rate adjustment following a significant cross-check with monetary information, when the New-Keynesian model is the central bank’s preferred model. The cross-check is shown to be effective in offsetting persistent deviations of inflation due to central bank misperceptions. Keywords: Monetary Policy, New-Keynesian Model, Money, Quantity Theory, European Central Bank, Policy Under Uncertaint
Labeling Uncertainty in Multitarget Tracking
In multitarget tracking, the problem of track labeling (assigning labels to tracks) is an ongoing research topic. The existing literature, however, lacks an appropriate measure of uncertainty related to the assigned labels that has a sound mathematical basis as well as clear practical meaning to the user. This is especially important in a situation where well separated targets move in close proximity with each other and thereafter separate again; in such a situation, it is well known that there will be confusion on target identities, also known as "mixed labeling." In this paper, we specify comprehensively the necessary assumptions for a Bayesian formulation of the multitarget tracking and labeling (MTTL) problem to be meaningful. We provide a mathematical characterization of the labeling uncertainties with clear physical interpretation. We also propose a novel labeling procedure that can be used in combination with any existing (unlabeled) MTT algorithm to obtain a Bayesian solution to the MTTL problem. One advantage of the resulting solution is that it readily provides the labeling uncertainty measures. Using the mixed labeling phenomenon in the presence of two targets as our test bed, we show with simulation results that an unlabeled multitarget sequential Monte Carlo (M-SMC) algorithm that employs sequential importance resampling (SIR) augmented with our labeling procedure performs much better than its "naive" extension, the labeled SIR M-SMC filter
Determination of the Bending Rigidity of Graphene via Electrostatic Actuation of Buckled Membranes
The small mass and atomic-scale thickness of graphene membranes make them
highly suitable for nanoelectromechanical devices such as e.g. mass sensors,
high frequency resonators or memory elements. Although only atomically thick,
many of the mechanical properties of graphene membranes can be described by
classical continuum mechanics. An important parameter for predicting the
performance and linearity of graphene nanoelectromechanical devices as well as
for describing ripple formation and other properties such as electron
scattering mechanisms, is the bending rigidity, {\kappa}. In spite of the
importance of this parameter it has so far only been estimated indirectly for
monolayer graphene from the phonon spectrum of graphite, estimated from AFM
measurements or predicted from ab initio calculations or bond-order potential
models. Here, we employ a new approach to the experimental determination of
{\kappa} by exploiting the snap-through instability in pre-buckled graphene
membranes. We demonstrate the reproducible fabrication of convex buckled
graphene membranes by controlling the thermal stress during the fabrication
procedure and show the abrupt switching from convex to concave geometry that
occurs when electrostatic pressure is applied via an underlying gate electrode.
The bending rigidity of bilayer graphene membranes under ambient conditions was
determined to be eV. Monolayers have significantly lower
{\kappa} than bilayers
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