Pyroelectric response of ferroelectric nanoparticles: size effect and electric energy harvesting

The size effect on pyroelectric response of ferroelectric nanowires and nanotubes is analyzed. The pyroelectric coefficient strongly increases with the wire radius decrease and diverges at critical radius Rcr corresponding to the size-driven transition into paraelectric phase. Size-driven enhancement of pyroelectric coupling leads to the giant pyroelectric current and voltage generation by the polarized ferroelectric nanoparticles in response to the temperature fluctuation. The maximum efficiency of the pyroelectric energy harvesting and bolometric detection is derived, and is shown to approach the Carnot limit for low temperatures.Comment: 17 pages, 4 figures, 1 Appendi

Mesoscopic mechanism of the domain wall interaction with elastic defects in ferroelectrics

The role of elastic defects on the kinetics of 180-degree uncharged ferroelectric domain wall motion is explored using continuum time-dependent LGD equation with elastic dipole coupling. In one dimensional case, ripples, steps and oscillations of the domain wall velocity appear due to the wall-defect interactions. While the defects do not affect the limiting-wall velocity vs. field dependence, they result in the minimal threshold field required to activate the wall motions. The analytical expressions for the threshold field are derived and the latter is shown to be much smaller than the thermodynamic coercive field. The threshold field is linearly proportional to the concentration of defects and non-monotonically depends on the average distance between them. The obtained results provide the insight into the mesoscopic mechanism of the domain wall pinning by elastic defects in ferroelectrics.Comment: 18 pages, 6 figures, 1 appendi

Reliability of AC thick-film electroluminescent lamps

The reliability of AC thick-film EL devices has been studied. The AC thickfilm EL devices were fabricated by Novatech Inc. using the industrial print screen technology. The analysis of reasons for failure has been proposed. The dependence of EL lamp parameters on physical properties of the device EL layers was found. Our analysis of the breakdown spot showed that improvement of reliability can be reached using the additional dielectric layer between the phosphor layer and transparent electrode, high concentration of phosphor powder 70 % and binder 30 %, balanced resistance between the electric circuit and EL lamp. The thickness of the phosphor layer was equal to H = (1 + √3/2)D (hexagonal packing), where D is the mean diameter of phosphor particles. The reliability dependence of EL lamp on a water adsorption property of packaging material was revealed

Endocrine Disruptors and Leydig Cell Function

During the past decades, a large body of information concerning the effects of endocrine disrupting compounds (EDCs) on animals and humans has been accumulated. EDCs are of synthetic or natural origin and certain groups are known to disrupt the action of androgens and to impair the development of the male reproductive tract and external genitalia. The present overview describes the effects of the different classes of EDCs, such as pesticides, phthalates, dioxins, and phytoestrogens, including newly synthesized resveratrol analogs on steroidogenesis in Leydig cells. The potential impact of these compounds on androgen production by Leydig cells during fetal development and in the adult age is discussed. In addition, the possible role of EDCs in connection with the increasing frequency of abnormalities in reproductive development in animals and humans is discussed

Static conductivity of charged domain wall in uniaxial ferroelectric-semiconductors

Using Landau-Ginzburg-Devonshire theory we calculated numerically the static conductivity of both inclined and counter domain walls in the uniaxial ferroelectrics-semiconductors of n-type. We used the effective mass approximation for the electron and holes density of states, which is valid at arbitrary distance from the domain wall. Due to the electrons accumulation, the static conductivity drastically increases at the inclined head-to-head wall by 1 order of magnitude for small incline angles theta pi/40 by up 3 orders of magnitude for the counter domain wall (theta=pi/2). Two separate regions of the space charge accumulation exist across an inclined tail-to-tail wall: the thin region in the immediate vicinity of the wall with accumulated mobile holes and the much wider region with ionized donors. The conductivity across the tail-to-tail wall is at least an order of magnitude smaller than the one of the head-to-head wall due to the low mobility of holes, which are improper carries. The results are in qualitative agreement with recent experimental data for LiNbO3 doped with MgO.Comment: 20 pages, 6 figures, 1 appendi

Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures

Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the inhomogeneous electric field induced by the nanosized tip of the Scanning Probe Microscope (SPM) probe) the thickness and charge of the interface layer drastically changes, it particular the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport.Comment: 35 pages, 12 figures, 1 table, 2 appendices, to be submitted to Phys. Rev.

Domain wall conduction in multiaxial ferroelectrics

The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are analyzed using the Landau-Ginsburg Devonshire (LGD) theory for polarization combined with Poisson equation for charge distributions. Both the classical ferroelectric parameters including expansion coefficients in 2-4-6 Landau potential and gradient terms, as well as flexoelectric coupling, inhomogeneous elastic strains and electrostriction are included in the present analysis. Spatial distributions of the ionized donors, free electrons and holes were found self-consistently using the effective mass approximation for the respective densities of states. The proximity and size effect of the electron and donor accumulation/depletion by thin stripe domains and cylindrical nanodomains are revealed. In contrast to thick domain stripes and thicker cylindrical domains, in which the carrier accumulation (and so the static conductivity) sharply increases at the domain walls only, small nanodomains of radius less then 5-10 correlation length appeared conducting across entire cross-section. Implications of such conductive nanosized channels may be promising for nanoelectronics.Comment: 39 pages, 11 figures, 3 tables, 4 appendice

Thermodynamics of nanodomain formation and breakdown in Scanning Probe Microscopy: Landau-Ginzburg-Devonshire approach

Thermodynamics of tip-induced nanodomain formation in scanning probe microscopy of ferroelectric films and crystals is studied using the Landau-Ginzburg-Devonshire phenomenological approach. The local redistribution of polarization induced by the biased probe apex is analyzed including the effects of polarization gradients, field dependence of dielectric properties, intrinsic domain wall width, and film thickness. The polarization distribution inside subcritical nucleus of the domain preceding the nucleation event is very smooth and localized below the probe, and the electrostatic field distribution is dominated by the tip. In contrast, polarization distribution inside the stable domain is rectangular-like, and the associated electrostatic fields clearly illustrate the presence of tip-induced and depolarization field components. The calculated coercive biases of domain formation are in a good agreement with available experimental results for typical ferroelectric materials. The microscopic origin of the observed domain tip elongation in the region where the probe electric field is much smaller than the intrinsic coercive field is the positive depolarization field in front of the moving counter domain wall. For infinitely thin domain walls local domain breakdown through the sample depth appears. The results obtained here are complementary to the Landauer-Molotskii energetic approach.Comment: 35 pages, 8 figures, suplementary attached, to be submitted to Phys. Rev.

Frequency Dependent Dynamical Electromechanical Response of Mixed Ionic-Electronic Conductors

Frequency dependent dynamic electromechanical response of the mixed ionic-electronic conductor film to a periodic electric bias is analyzed for different electronic and ionic boundary conditions. Dynamic effects of mobile ions concentration (stoichiometry contribution), charge state of acceptors (donors), electron concentration (electron-phonon coupling via the deformation potential) and flexoelectric effect contribution are discussed. A variety of possible nonlinear dynamic electromechanical response of MIEC films including quasi-elliptic curves, asymmetric hysteresis-like loops with pronounced memory window and butterfly-like curves are calculated. The electromechanical response of ionic semiconductor is predicted to be a powerful descriptor of local valence states, band structure and electron-phonon correlations that can be readily measured in the nanoscale volumes and in the presence of strong electronic conductivity.Comment: 36 pages, 10 figures, accepted to J. Appl. Phy