Technology of e-labs development in lifelong learning

Development of high technologies in industry requires an implementation of a multidisciplinary approach in modern science. It put forward higher requirements for specialists in different fields of science and makes it necessary to increase the intellectual level of the individual. Lifelong learning could be a good solution to these requirements. The essential instrument of such training is becoming distance e-learning. It provides sufficiently quick development and modernization of new training courses. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3341

Recognition of metallic and semiconductor single-wall carbon nanotubes using the photoelectric method

An innovative application of deep barrier silicon structures for sensory devices with photoelectrical transformation has been suggested. The principal possibility of the photovoltaic transducer implementation for identification of metallic and semiconductor single-wall carbon nanotubes covered with surfactant in water solution was analyzed in detail. The obtained results are qualitatively explained by local electrostatic influence on the parameters of recombination centers at the silicon surface. This influence can be associated with the dipole moment of molecules absorbed at the surface of the nanotube from surfactant sodium dodecylbenzene sulfonate (SDBS). Moreover, the spatial configuration of charged fragments near the defects at the silicon surface can occur. Another possible reason for carbon nanotubes identification is due to the different polarizability of metallic and semiconductor nanotubes. These results are explained in the frame of Stevenson-Keyes's theory. The reported effect can be further applied as the basis for the control and selection of carbon nanotubes with different conductivity types

Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals

Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum transformation in n-Si and n-Ge are discussed. The main statements of the effective mass-donor concept for hydrogen-like impurities in monocrystalline semiconductors were verified

Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon

Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects in n-Si(P) crystals doped by neutron irradiation and doped at growth were studied by the tensoeffects measurements and by analysis of the pressure dependencies of the electron concentration ratio in "upper" and "lower" L1-valleys of uniaxially strained samples. Comparison of the some parameters for the crystals doped either by neutron transmutation method or in the melt is carried out