114,135 research outputs found

    Bit Error Rates for Ultrafast APD Based Optical Receivers: Exact and Large Deviation Based Asymptotic Approaches

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    Exact analysis as well as asymptotic analysis, based on large-deviation theory (LDT), are developed to compute the bit-error rate (BER) for ultrafast avalanche-photodiode (APD) based optical receivers assuming on-off keying and direct detection. The effects of intersymbol interference (ISI), resulting from the APD\u27s stochastic avalanche buildup time, as well as the APD\u27s dead space are both included in the analysis. ISI becomes a limiting factor as the transmission rate approaches the detector\u27s bandwidth, in which case the bit duration becomes comparable to APD\u27s avalanche buildup time. Further, the effect of dead space becomes significant in high-speed APDs that employ thin avalanche multiplication regions. While the exact BER analysis at the generality considered here has not been reported heretofore, the asymptotic analysis is a major generalization of that developed by Letaief and Sadowsky [IEEE Trans. Inform. Theory, vol. 38, 1992], in which the LDT was used to estimate the BER assuming APDs with an instantaneous response (negligible avalanche buildup time) and no dead space. These results are compared with those obtained using the common Gaussian approximation approach showing the inadequacy of the Guassian approximation when ISI noise has strong presence

    Disentanglement in a quantum critical environment

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    We study the dynamical process of disentanglement of two qubits and two qutrits coupled to an Ising spin chain in a transverse field, which exhibits a quantum phase transition. We use the concurrence and negativity to quantify entanglement of two qubits and two qutrits, respectively. Explicit connections between the concurrence (negativity) and the decoherence factors are given for two initial states, the pure maximally entangled state and the mixed Werner state. We find that the concurrence and negativity decay exponentially with fourth power of time in the vicinity of critical point of the environmental system.Comment: 8 pages, 6 figure

    The origins of electromechanical indentation size effect in ferroelectrics

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    Metals exhibit a size-dependent hardening when subject to indentation. Mechanisms for this phenomenon have been intensely researched in recent times. Does such a size-effect also exist in the electromechanical behavior of ferroelectrics?--if yes, what are the operative mechanisms? Our experiments on BaTiO3 indeed suggest an electromechanical size-effect. We argue, through theoretical calculations and differential experiments on another non-ferroelectric piezoelectric (Quartz), that the phenomenon of flexoelectricity(as opposed to dislocation activity) is responsible for our observations. Flexoelectricity is the coupling of strain gradients to polarization and exists in both ordinary and piezoelectric dielectrics. In particular, ferroelectrics exhibit an unusually large flexoelectric response.Comment: in revie
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