67 research outputs found

    End-Use Quality of Historical and ModernWinter Wheats Adapted to the Great Plains of the United States

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    Improving milling and baking properties is important during wheat breeding. To determine changes in milling and baking quality of hard winter wheat, 23 adapted cultivars released in the Great Plains between 1870 and 2013 were grown in triplicate in a single location (Mead, NE, USA) over two crop years (2018 and 2019). Grain yield and kernel hardness index increased by release year (p \u3c 0.05). The observed increase in hardness index was accompanied by a decrease in percent soft kernels (p \u3c 0.05). Diameter and weight decreased with release year in 2019 (p \u3c 0.05), and their standard deviation increased with the release year (p \u3c 0.05). Flour protein content decreased with release year (p \u3c 0.05) and dough mixing quality increased (p \u3c 0.05). No significant relationship was found for baking property variables, but bran water retention capacity (BWRC), which is correlated with whole wheat bread quality, increased with release year (p \u3c 0.05). In conclusion, wheat kernels have become harder but more variable in shape over a century of breeding. Mixing quality showed significant improvements, and loaf volume and firmness remained constant, even in the presence of a decrease in protein concentration. Bran quality decreased across release year, which may have implications for whole grain baking quality and milling productivity

    Vitamin D Signaling through Induction of Paneth Cell Defensins Maintains Gut Microbiota and Improves Metabolic Disorders and Hepatic Steatosis in Animal Models.

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    Metabolic syndrome (MetS), characterized as obesity, insulin resistance, and non-alcoholic fatty liver diseases (NAFLD), is associated with vitamin D insufficiency/deficiency in epidemiological studies, while the underlying mechanism is poorly addressed. On the other hand, disorder of gut microbiota, namely dysbiosis, is known to cause MetS and NAFLD. It is also known that systemic inflammation blocks insulin signaling pathways, leading to insulin resistance and glucose intolerance, which are the driving force for hepatic steatosis. Vitamin D receptor (VDR) is highly expressed in the ileum of the small intestine, which prompted us to test a hypothesis that vitamin D signaling may determine the enterotype of gut microbiota through regulating the intestinal interface. Here, we demonstrate that high-fat-diet feeding (HFD) is necessary but not sufficient, while additional vitamin D deficiency (VDD) as a second hit is needed, to induce robust insulin resistance and fatty liver. Under the two hits (HFD+VDD), the Paneth cell-specific alpha-defensins including α-defensin 5 (DEFA5), MMP7 which activates the pro-defensins, as well as tight junction genes, and MUC2 are all suppressed in the ileum, resulting in mucosal collapse, increased gut permeability, dysbiosis, endotoxemia, systemic inflammation which underlie insulin resistance and hepatic steatosis. Moreover, under the vitamin D deficient high fat feeding (HFD+VDD), Helicobacter hepaticus, a known murine hepatic-pathogen, is substantially amplified in the ileum, while Akkermansia muciniphila, a beneficial symbiotic, is diminished. Likewise, the VD receptor (VDR) knockout mice exhibit similar phenotypes, showing down regulation of alpha-defensins and MMP7 in the ileum, increased Helicobacter hepaticus and suppressed Akkermansia muciniphila. Remarkably, oral administration of DEFA5 restored eubiosys, showing suppression of Helicobacter hepaticus and increase of Akkermansia muciniphila in association with resolving metabolic disorders and fatty liver in the HFD+VDD mice. An in vitro analysis showed that DEFA5 peptide could directly suppress Helicobacter hepaticus. Thus, the results of this study reveal critical roles of a vitamin D/VDR axis in optimal expression of defensins and tight junction genes in support of intestinal integrity and eubiosis to suppress NAFLD and metabolic disorders

    Effect of Heavy Ion Irradiation Dosage on the Hardness of SA508-IV Reactor Pressure Vessel Steel

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    Specimens of the SA508-IV reactor pressure vessel (RPV) steel, containing 3.26 wt. % Ni and just 0.041 wt. % Cu, were irradiated at 290 °C to different displacement per atom (dpa) with 3.5 MeV Fe ions (Fe2+). Microstructure observation and nano-indentation hardness measurements were carried out. The Continuous Stiffness Measurement (CSM) of nano-indentation was used to obtain the indentation depth profile of nano-hardness. The curves showed a maximum nano-hardness and a plateau damage near the surface of the irradiated samples, attributed to different hardening mechanisms. The Nix-Gao model was employed to analyze the nano-indentation test results. It was found that the curves of nano-hardness versus the reciprocal of indentation depth are bilinear. The nano-hardness value corresponding to the inflection point of the bilinear curve may be used as a parameter to describe the ion irradiation effect. The obvious entanglement of the dislocations was observed in the 30 dpa sample. The maximum nano-hardness values show a good linear relationship with the square root of the dpa

    Pulsed Laser Beam Welding of Pd\u3csub\u3e43\u3c/sub\u3eCu\u3csub\u3e27\u3c/sub\u3eNi\u3csub\u3e10\u3c/sub\u3eP\u3csub\u3e20\u3c/sub\u3e Bulk Metallic Glass

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    We used pulsed laser beam welding method to join Pd43Cu27Ni10P20 (at.%) bulk metallic glass and characterized the properties of the joint. Fusion zone and heat-affected zone in the weld joint can be maintained completely amorphous as confirmed by X-ray diffraction and differential scanning calorimetry. No visible defects were observed in the weld joint. Nanoindentation and bend tests were carried out to determine the mechanical properties of the weld joint. Fusion zone and heat-affected zone exhibit very similar elastic moduli and hardness when compared to the base material, and the weld joint shows high ductility in bending which is accomplished through the operation of multiple shear bands. Our results reveal that pulsed laser beam welding under appropriate processing parameters provides a practical viable method to join bulk metallic glasses

    Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review

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    Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices

    Effect of Stress Ratio on Fatigue Crack Growth Behavior of Ti-6Al-2Zr-1Mo-1V Alloy

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    The fatigue crack growth behaviors of Ti-6.5Al-2Zr-1Mo-1V titanium alloy at different positive stress ratios (R = 0.1, 0.3 and 0.5) were investigated at room temperature. The effects of stress ratio R on the fatigue crack growth rates and fractures morphology were discussed. The results show that with the increase of stress ratio R , the fatigue crack growth rates are increased at the given applied cyclic stress intensity factor, ΔK. Equivalently, the observed threshold stress-intensity range ΔKth and the range of stress intensity factor ΔK for fatigue crack growth are decreased as the positive stress ratio is increased. Some fatigue steps and secondary cracks are observed on the fracture surfaces of the specimens tested at the three stress ratios. In addition, with the increase of the stress ratio, the toughness of the surface is increased and the secondary cracks are decreased. However, the fatigue fracture mechanisms of Ti-6.5Al-2Zr-1Mo-1V titanium alloy tested at the three stress ratios are all the same, which the fractures are all presented in transgranular mode

    Anisotropic high cycle fatigue property estimation for laser additive manufactured Ti6Al4V alloy dependence on tomographic imaging of defect population

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    Improvement of fatigue properties of additive manufactured metals is subject to the regulation of process-induced microstructure and defect population. Here, the high cycle fatigue properties of the annealed Ti6Al4V alloy manufactured by two types of laser powder bed fusion (L-PBF) processes, in orthogonal sample orientations, were studied. The fatigue performance of this alloy was also estimated dependence on the investigation of microstructure and defects using optical microscopy, X-ray diffraction, scanning electron microscopy and micro computed tomography. The results demonstrated that the fatigue properties were degraded by the negative effect of prior-β columnar grain boundaries and defects, wherein the surface keyhole governed the pronounced fatigue scatter and anisotropy due to its geometrical parameters and anisotropy severity along the building direction. The projection size √area of keyholes was well applied in the fatigue property estimation. The theorical fatigue limits were estimated individually due to the keyhole anisotropy, and provided conservatively in the improved Kitagawa-Takahashi diagram based on the modified El-Haddad model and the extreme size of keyholes. A relation derived from Paris law was proposed for fatigue life prediction, and to well establish a linear fitting correlating fatigue life with the projection size of surface keyholes and stress amplitude range with the achievement of the alleviation of fatigue anisotropy and scatter. The research provides a reference for the non-destructive estimation of fatigue properties in terms of tomographic imaging of defect population
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