Phosphorus donors in highly strained silicon

The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si$_{1-x}$Ge$_x$ substrates with $x\leq 0.3$ is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density functional theory (DFT) shows that the additional reduction is caused by the volume increase of the unit cell and a local relaxation of the Si ligands of the P donor.Comment: 12 pages, 3 figure

Bipolar polaron pair recombination in P3HT/PCBM solar cells

The unique properties of organic semiconductors make them versatile base materials for many applications ranging from light emitting diodes to transistors. The low spin-orbit coupling typical for carbon-based materials and the resulting long spin lifetimes give rise to a large influence of the electron spin on charge transport which can be exploited in spintronic devices or to improve solar cell efficiencies. Magnetic resonance techniques are particularly helpful to elucidate the microscopic structure of paramagnetic states in semiconductors as well as the transport processes they are involved in. However, in organic devices the nature of the dominant spin-dependent processes is still subject to considerable debate. Using multi-frequency pulsed electrically detected magnetic resonance (pEDMR), we show that the spin-dependent response of P3HT/PCBM solar cells at low temperatures is governed by bipolar polaron pair recombination involving the positive and negative polarons in P3HT and PCBM, respectively, thus excluding a unipolar bipolaron formation as the main contribution to the spin-dependent charge transfer in this temperature regime. Moreover the polaron-polaron coupling strength and the recombination times of polaron pairs with parallel and antiparallel spins are determined. Our results demonstrate that the pEDMR pulse sequences recently developed for inorganic semiconductor devices can very successfully be transferred to the study of spin and charge transport in organic semiconductors, in particular when the different polarons can be distinguished spectrally

MPGDs in Compton imaging with liquid-xenon

The interaction of radiation with liquid xenon, inducing both scintillation and ionization signals, is of particular interest for Compton-sequences reconstruction. We report on the development and recent results of a liquid-xenon time-projection chamber, dedicated to a novel nuclear imaging technique named "3 gamma imaging". In a first prototype, the scintillation is detected by a vacuum photomultiplier tube and the charges are collected with a MICROMEGAS structure; both are fully immersed in liquid xenon. In view of the final large-area detector, and with the aim of minimizing dead-zones, we are investigating a gaseous photomultiplier for recording the UV scintillation photons. The prototype concept is presented as well as preliminary results in liquid xenon. We also present soft x-rays test results of a gaseous photomultiplier prototype made of a double Thick Gaseous Electron Multiplier (THGEM) at normal temperature and pressure conditions.Comment: presented at MPGD09, CRETE, June 2009; to be published in JINST Proceedings, PDF, 10 pages, 11 figure

Transport and recombination through weakly coupled localized spin pairs in semiconductors during coherent spin excitation

Semi-analytical predictions for the transients of spin-dependent transport and recombination rates through localized states in semiconductors during coherent electron spin excitation are made for the case of weakly spin-coupled charge carrier ensembles. The results show that the on-resonant Rabi frequency of electrically or optically detected spin-oscillation doubles abruptly as the strength of the resonant microwave field gamma B_1 exceeds the Larmor frequency separation within the pair of charge carrier states between which the transport or recombination transition takes place. For the case of a Larmor frequency separation of the order of gamma B_1 and arbitrary excitation frequencies, the charge carrier pairs exhibit four different nutation frequencies. From the calculations, a simple set of equations for the prediction of these frequencies is derived

First measurements with a new β\beta-electron detector for spectral shape studies

The shape of the spectrum corresponding to the electrons emitted in $\beta$ decay carries a wealth of information about nuclear structure and fundamental physics. In spite of that, few dedicated measurements have been made of $\beta$-spectrum shapes. In this work we present a newly developed detector for $\beta$ electrons based on a telescope concept. A thick plastic scintillator is employed in coincidence with a thin silicon detector. First measurements employing this detector have been carried out with mono-energetic electrons from the high-energy resolution electron-beam spectrometer at Bordeaux. Here we report on the good reproduction of the experimental spectra of mono-energetic electrons using Monte Carlo simulations. This is a crucial step for future experiments, where a detailed Monte Carlo characterization of the detector is needed to determine the shape of the $\beta$-electron spectra by deconvolution of the measured spectra with the response function of the detector. A chamber to contain two telescope assemblies has been designed for future $\beta$-decay experiments at the Ion Guide Isotope Separator On-Line facility in Jyv\"askyl\"a, aimed at improving our understanding of reactor antineutrino spectra

Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy

Cathodoluminescence (CL) in the scanning electron microscope and atomic force microscopy (AFM) have been used to study the formation of pinholes in tensile and compressively strained AlInGaN films grown on Al2O3 substrates by plasma-induced molecular beam epitaxy. Nanotubes, pits, and V-shaped pinholes are observed in a tensile strained sample. CL images show an enhanced emission around the pits and a lower intensity at the V-shaped pinholes. Rounded pinholes appear in compressively strained samples in island-like regions with higher In concentration. The grain structure near the pinholes is resolved by AFM. (C) 2004 American Institute of Physics

Long-range potential fluctuations and 1/f noise in hydrogenated amorphous silicon

We present a microscopic theory of the low-frequency voltage noise (known as "1/f" noise) in micrometer-thick films of hydrogenated amorphous silicon. This theory traces the noise back to the long-range fluctuations of the Coulomb potential produced by deep defects, thereby predicting the absolute noise intensity as a function of the distribution of defect activation energies. The predictions of this theory are in very good agreement with our own experiments in terms of both the absolute intensity and the temperature dependence of the noise spectra.Comment: 8 pages, 3 figures, several new parts and one new figure are added, but no conceptual revision