Hydrogenated amorphous silicon:impact of process conditions on material properties and solar cell efficiency

Thin-film silicon solar cells are one possible answer to the increasing energy demand of today. Hydrogenated amorphous silicon (a-Si:H) plays a crucial role therein - as absorber layers, but also as doped layers to build p-i -n junctions. This thesis is devoted to a-Si:H, with the main focus on thin-film silicon solar cells, but also with applications for opto-electronic devices, detectors, and other types of solar cells such as heterojunction solar cells. We discuss models of a-Si:H and develop further the representation of defects by amphoteric states. Using a simple model, we show - in agreement with layer-by-layer simulations and experimental results - that trapped electrons tend to dominate the electric field deformation in the initial state, whereas positively charged defects dominate in the degraded state. Experimentally, we define the deposition parameter space accessible by plasma-enhanced chemical vapor deposition (PECVD) and explore that space by varying the deposition temperature, pressure, excitation frequency, power, and H2/SiH4 ratio for intrinsic absorber layers. This leads to a catalog of a-Si:H absorber layers with tunable properties and we incorporate these materials into solar cells. For every pressure, we find an optimum hydrogen dilution where the light-induced degradation of solar cells is minimal and comparable for all pressures. Using narrow-bandgap absorbers, we demonstrate short-circuit current densities of Jsc=18.2 mA/cm2 with a 300-nm-thick absorber layer and extract more than 20 mA/cm2 from a cell with a 1000-nm-thick absorber layer. Using wide-bandgap absorbers, we achieve open-circuit voltages (Voc) of 1.04 V and Voc-fill factor products of 739mV. For such materials, we find an increased Voc dependence on substrate roughness. This is investigated by transmission electron microscopy and is attributed to porous a-Si:H material grown above peaks on the textured substrates. Depositing absorber layers in a triode reactor, we achieve efficiencies of 10.0% after light soaking. Further, we describe observations of a reversible, light-induced Voc increase of solar cells with thin p-type layers, and decrease with thick p-type layers, with a magnified effect on rough substrates. Based on layer measurements and simulations, we attribute the Voc increase to the degradation of the p-layer and the Voc decrease to the degradation of the absorber layer

Internal electric field and fill factor of amorphous silicon (a-Si:H) solar cells

The electric field E within the i-layer of hydrogenated amorphous silicon (a-Si:H) solar cells strongly affects the cell performances, and, specifically, the fill factor FF. It governs the drift length Ldrift = μτE which is the crucial parameter limiting charge collection. Ideally, a constant electric field is assumed across the i-layer, whereas in real devices, it is deformed by charged band tail states and dangling bonds. If the i-layer is too thick or has a high density of charged defects, E is deformed and reduced. To determine theoretically the charge states of band tails and dangling bonds, we must know the carrier density profiles within the i-layer. Here, the SunShine program is used to determine carrier generation profiles within i-layers of pincells on TCO-covered glass substrates. A classical model for transport and electron/hole capture is employed to determine charge conditions of band tail states and dangling bonds. Results are: (a) charged dangling bonds are predominant for the electric field deformation, affecting the output performance of the cell; (b) this effect is very pronounced especially in degraded cells; (c) it is independent of light intensity; (d) it accounts for performance breakdown of thick, degraded a-Si:H cells. Calculated results are confronted with experimental observations (measurements of FF, collection voltage Vcoll and external quantum efficiency EQE) on pin-type solar cells of 100, 200, 300, and 400 nm thickness produced at IMT Neuchâtel, in initial and degraded state. Ldrift is evaluated via Vcoll, determined here with the method of variable intensity measurements (VIM). Trends observed are explained to full satisfaction

Charge collection in amorphous silicon solar cells: Cell analysis and simulation of high-efficiency pin devices

The drift length Ldrift=μτE within the i layer of a-Si:H solar cells is a crucial parameter for charge collection and efficiency. It is strongly reduced not only by light-induced reduction of μτ, but also by electric field deformation ΔE by charges near the p–i and i–n interfaces. Here, a simple model is presented to estimate contributions of free carriers, charges trapped in band tails and charged dangling bonds to ΔE. It is shown that the model reproduces correctly trends observed experimentally and by ASA simulations: charged dangling bonds contribute most to ΔE of meta-stable cells. Electrons trapped in the conduction band tail near the i–n interface lead to the strongest field deformation in the initial state, while positively charged dangling bonds near the p–i interface get more important with degradation under AM1.5g spectrum. The measurable parameter Vcoll is proposed as an indirect parameter to estimate the electric field, and an experimental technique is presented that could enable the distinction of defects near the p–i and the i–n interfaces

Electrothermal Finite-Element Modeling for Defect Characterization in Thin-Film Silicon Solar Modules

We present and validate a finite-element model for coupled charge and heat transport in monolithically interconnected thin-film solar modules. Using measured current-voltage (I-V) and lock-in thermography (LIT) measurements of amorphous silicon minimodules, we experimentally validate our model. The entire module volume is represented by two planes (front and back electrodes) which are coupled in vertical direction using 1-D models, leading to a large reduction of the degrees of freedom in the numerical model and contributing to an efficient solution approach. As compared to 3-D models, the vertical coupling of the charge transport is represented by local temperature-dependent I-V curves. These can be obtained by drift-diffusion calculations, single-cell measurements or, as presented here, by an analytical solar cell diode model. Inhomogeneous heat sources such as Joule's heating in the electrodes lead to nonuniform temperature distributions. The explicit temperature dependence in the local I-V curve, therefore, mediates the feedback of the thermal transport on the local electrical cell characteristics. We employ measured I-V curves under partial illumination and analytical solutions for the potential distribution to validate this approach. Further, with LIT measurements of the same modules with and without artificially induced electrical shunts, we verify the computed temperature distributions

Light-induced Voc increase and decrease in high-efficiency amorphous silicon solar cells

High-efficiency amorphous silicon (a-Si:H) solar cells were deposited with different thicknesses of the p-type amorphous silicon carbide layer on substrates of varying roughness. We observed a light-induced open-circuit voltage (Voc) increase upon light soaking for thin p-layers, but a decrease for thick p-layers. Further, the Voc increase is enhanced with increasing substrate roughness. After correction of the p-layer thickness for the increased surface area of rough substrates, we can exclude varying the effective p-layer thickness as the cause of the substrate roughness dependence. Instead, we explain the observations by an increase of the dangling-bond density in both the p-layer—causing a Voc increase—and in the intrinsic absorber layer, causing a Voc decrease. We present a mechanism for the light-induced increase and decrease, justified by the investigation of light-induced changes of the p-layer and supported by Advanced Semiconductor Analysis simulation. We conclude that a shift of the electron quasi-Fermi level towards the conduction band is the reason for the observed Voc enhancements, and poor amorphous silicon quality on rough substrates enhances this effect

PtyNAMi: ptychographic nano-analytical microscope

Ptychographic X-ray imaging at the highest spatial resolution requires an optimal experimental environment, providing a high coherent flux, excellent mechanical stability and a low background in the measured data. This requires, for example, a stable performance of all optical components along the entire beam path, high temperature stability, a robust sample and optics tracking system, and a scatter-free environment. This contribution summarizes the efforts along these lines to transform the nanoprobe station on beamline P06 (PETRA III) into the ptychographic nano-analytical microscope (PtyNAMi

Light-Management Strategies for Thin-Film Silicon Multijunction Solar Cells

Light management is of crucial importance to reach high efficiencies with thin-film silicon multijunction solar cells. In this contribution, we present light-management strategies that we recently developed. This includes high quality absorber materials, low-refractive index intermediate reflectors, and highly transparent multiscale electrodes. Specifically, we show the fabrication of high-efficiency tandem devices with a certified stabilized efficiency of 12.6%, triple-junction solar cells with a stabilized efficiency of 12.8%, recently developed smoothening intermediate reflector layers based on silicon dioxide nanoparticles, and periodic-on-random multiscale textures

Light Harvesting Schemes for High Efficiency Thin Film Silicon Solar Cells

In Thin Film Silicon (TF-Si) solar cells light harvesting schemes must guarantee an efficient light trapping in the thin absorber layers without decreasing the silicon layers quality and consecutively the p-i-n diodes electrical performance. TF-Si solar cells resilience to the substrate roughness is reported to be possibly improved through optimizations of the cell design and of the silicon deposition processes. By further tailoring the superstrate texture, amorphous silicon / microcrystalline silicon (a-Si:H/mu c-Si:H) tandem solar cells with an initial efficiency up to 13.7 % and a stabilized efficiency up to 11.8 % are demonstrated on single-scale textured superstrates. An alternative approach combining large and smooth features nanoimprinted onto a transparent lacquer with small and sharp textures from as-grown LPCVD ZnO is then shown to have a high potential for further increasing TF-Si devices efficiency. First results demonstrate up to 14.1 % initial efficiency for a TF-Si tandem solar cell