Dissolution Potentials And Activation Energies Of InSb Single Crystals

The rest (or corrosion) and dissolution potentials of InSb single crystals in HC1 were determined. There is no potential difference (within error limits) between the inverse {111} faces in pure HC1. A difference of up to 44 mV and more develops as soon as the InSb electrode is anodically dissolved. The potential becomes less noble in the sequence In{111}, {100}, {110}, Sb{111}. The Tafel relationship is observed over three decades of current density. With additions of FeCl3, FeCl2, K3Fe(CN)6, K4Fe(CN)6, H2C4H4O6 to 2N HC1, the anodic potentials of both inverse {111} faces are shifted to more active values; the e\u27H of In{111} is always nobler than that of Sb{111}. There are indications that the various potentials observed are a function of current density within the pores of a protective layer, Sb^OsCU. The apparent activation energy, ca. 20 kcal/mole, of the anodic dissolution reaction is nearly the same on all crystallography planes of InSb. The rate of anodic dissolution of Sb{111} in pure 2N HC1 is 3-7 times larger than that of the inverse face at the same potential. © 1972, by The Electrochemical Society, Inc. All rights reserved

Activities Using Process‐Oriented Guided Inquiry Learning (POGIL) in the Foreign Language Classroom

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/89484/1/j.1756-1221.2011.00090.x.pd

Thermal Expansion Of Tungsten At Low Temperatures

Lattice parameters, thermal expansion coefficients, and Grüneisen parameters of tungsten are determined by an x-ray method in the temperature range of 180-40 K without the use of liquid gases. Lattice parameters are expressed as a function of temperature. Thermal-expansion coefficients decrease with temperature and show no anomaly in contrast to a hypothesis proposed by Featherston and Neighbours. Grüneisen parameters γ are decreasing with temperature in accordance with the theoretical predictions. © 1971 The American Institute of Physics

The Anodic Dissolution Reaction Of InSb: Etch Patterns, Electron Number, Anodic Disintegration, And Film Formation

The etching behavior of the inverse {111} planes of undoped, semiconducting, n-type, InSb single crystals was explored. Depending upon the etchant, including anodic dissolution, various etch patterns were obtained on the inverse planes. In general, the etch pits on the In{111} plane were round, and the face was shiny, whereas the face of the inverse plane was dark and rough. The rates of dissolution in the electrolytes used were very low, especially in absence of oxidizers. The components dissolve as In3+ and Sb3 +. At current densities above 40 or 60 mA cm-2 (on Sb{111} or In{111}), growth of a black, colloidal film of Sb4O5Cl2 containing very fine metallic Sb particles occurs on both planes. The Sb particles result from the partial disintegration of InSb. Upon heating the film in vacuum, recrystallization occurs and the Sb aggregates to form larger particles. An explanation is offered for the different behaviors of the inverse {111} planes. © 1971, by The Electrochemical Society, Inc. All rights reserved

Thermal Expansion Behavior Of Silicon At Low Temperatures

Lattice parameters, thermal expansion coefficients and Grüneisen parameters of silicon are determined by an X-Ray diffraction method in the temperature range of 180-40 K without the use of liquid gases. Thermal expansion of silicon becomes negative below 120 K which is discussed in terms of its lattice vibrations and crystal structure. © 1972

Low Temperature Lattice Parameters And Expansion Coefficients Of AI2Au And LiF Gruneisen Constants Of LiF

There is no difference in the thermal expansion behavior of an intermetallic compound (Al2Au) and of an ionic (LiF), except in the magnitude of the expansion coefficients, which for both compounds upon cooling below 40°K approach zero. The lattice parameters of the two compounds mentioned decrease uniformly and without anomalies with lowering the temperature, approaching a constant value below 40°K. The a–T relationship between 40 and 180° is given in form of equations. A pump working on the Joule‐Thomson principle was used for cooling. The GRÜNEISEN parameter, γ, of LiF between 40 and 180°K is a constant, contrary to theoretical prediction. The values of a, α and γ agree well with previous measurements, where liquid gases were used for cooling and lattice parameter determinations and a dilatometer for expansivity measurements. Copyright © 1972 Verlag GmbH & Co. KGaA, Weinhei

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