Damage estimation of subterranean building constructions due to groundwater inundation – the GIS-based model approach GRUWAD

The analysis and management of flood risk commonly focuses on surface water floods, because these types are often associated with high economic losses due to damage to buildings and settlements. The rising groundwater as a secondary effect of these floods induces additional damage, particularly in the basements of buildings. Mostly, these losses remain underestimated, because they are difficult to assess, especially for the entire building stock of flood-prone urban areas. For this purpose an appropriate methodology has been developed and lead to a groundwater damage simulation model named GRUWAD. The overall methodology combines various engineering and geoinformatic methods to calculate major damage processes by high groundwater levels. It considers a classification of buildings by building types, synthetic depth-damage functions for groundwater inundation as well as the results of a groundwater-flow model. The modular structure of this procedure can be adapted in the level of detail. Hence, the model allows damage calculations from the local to the regional scale. Among others it can be used to prepare risk maps, for ex-ante analysis of future risks, and to simulate the effects of mitigation measures. Therefore, the model is a multifarious tool for determining urban resilience with respect to high groundwater levels

Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells

We present a detailed material study of n+-type polysilicon (polySi) and its application as a carrier selective rear contact in a bifacial n-type solar cell comprising fire-through screen-printed metallization and 6" Cz wafers. The cells were manufactured with low-cost industrial process steps yielding Vocs from 676 to 683 mV and Jscs above 39.4 mA/cm2 indicating an efficiency potential of 22%. The aim of this study is to understand which material properties determine the performance of POCl3-diffused (n-type) polySi-based passivating contacts and to find routes to improve its use for industrial PERPoly (Passivated Emitter Rear PolySi) cells from the point of view of throughput, performance, and bifacial application. This paper reports on correlations between the parameters used for low pressure chemical vapour deposition (LPCVD), annealing, and doping on optical, structural, and electronic properties of the polySi-based passivating contact and the subsequent influence on the solar cell parameters

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We present a detailed material study of n+-type polysilicon (polySi) and its application as a carrier selective rear contact in a bifacial n-type solar cell comprising fire-through screen-printed metallization and 6" Cz wafers. The cells were manufactured with low-cost industrial process steps yielding Vocs from 676 to 683 mV and Jscs above 39.4 mA/cm2 indicating an efficiency potential of 22%. The aim of this study is to understand which material properties determine the performance of POCl3-diffused (n-type) polySi-based passivating contacts and to find routes to improve its use for industrial PERPoly (Passivated Emitter Rear PolySi) cells from the point of view of throughput, performance, and bifacial application. This paper reports on correlations between the parameters used for low pressure chemical vapour deposition (LPCVD), annealing, and doping on optical, structural, and electronic properties of the polySi-based passivating contact and the subsequent influence on the solar cell parameters

Passivation Enhancement of Poly-Si Carrier-Selective Contacts by Applying ALD Al_2O_3 Capping Layers

Hydrogenation of polycrystalline silicon (poly-Si) passivating contacts is crucial for maximizing their passivation performance. This work presents the application of Al2O3 prepared by atomic layer deposition as a hydrogenating capping layer. Several important questions related to this application of Al2O3 are addressed by comparing results from Al2O3 single layers, SiNx single layers, and Al2O3/SiNx double layers to different poly-Si types. We investigate the effect of the Al2O3 thickness, the poly-Si thickness, the poly-Si doping type, and the postdeposition annealing treatment on the passivation quality of poly-Si passivating contacts. Especially, the Al2O3/SiNx stack greatly enhances the passivation quality of both n+ and p+ doped as well as intrinsic poly-Si layers. The Al2O3 layer thickness is crucial for the single-layer approach, whereas the Al2O3/SiNx stack is less sensitive to the thickness of the Al2O3 layer. A thicker Al2O3 layer is needed for effectively hydrogenating p+ compared to n+ poly-Si passivating contact. The capping layers can hydrogenate poly-Si layers with thicknesses up to at least 600 nm. The hydrogenation-enhanced passivation for n+ poly-Si is found to be more thermally stable in comparison to p+ poly-Si. These results provide guidelines on the use of Al2O3 capping layers for poly-Si contacts to significantly improve their passivation performance.Photovoltaic Materials and DevicesElectrical Sustainable Energ