Double crystal x-ray diffraction simulations of diffusion in semiconductor microstructures

Diffusion in group IV, III-V and II-VI semiconductors is an interesting problem not only from a fundamental physics viewpoint but also in practical terms, since it could determine the useful lifetime of a device. Any attempt to control the amount of diffusion in a semiconductor device, whether it be a quantum well structure or not, requires an accurate determination of the diffusion coefficient. The present theoretical study shows that this could be achieved via x-ray diffraction studies in quantum well structures. It is demonstrated that the rocking curves of single quantum wells are not sensitive to diffusion. However the intensity of the first order satellite, which is characteristic of superlattice rocking curves, is strongly dependent upon diffusion and it is proposed that this technique could be used to measure the diffusion coefficient D. © 1998 American Institute of Physics

Utopianism and social change: materialism, conflict and pluralism

This article discusses criticisms that utopia and utopianism undermine social change. It outlines two types of utopia, future and current. It argues against claims that utopianism is idealist and steps aside from material and conflictual dimensions of society and so undermines change, proposing that utopias are material and conflictual and contribute to change. Against liberal and pluralist criticisms that utopianism is end-ist and totalitarian and terminates diversity and change it argues that utopianism can encompass liberal and pluralist dimensions and be dynamic rather than static. It is proposed that criticisms create false conflations and dichotomies. Critical perspectives, rather than being rejected, are answered on their own terms. Utopianism, it is argued, is part of change, materially, now and in the future

Electric-field controlled ferromagnetism in MnGe magnetic quantum dots

Electric-field control of ferromagnetism in magnetic semiconductors at room temperature has been actively pursued as one of the important approaches to realize practical spintronics and non-volatile logic devices. While Mn-doped III-V semiconductors were considered as potential candidates for achieving this controllability, the search for an ideal material with high Curie temperature (Tc>300 K) and controllable ferromagnetism at room temperature has continued for nearly a decade. Among various dilute magnetic semiconductors (DMSs), materials derived from group IV elements such as Si and Ge are the ideal candidates for such materials due to their excellent compatibility with the conventional complementary metal-oxide-semiconductor (CMOS) technology. Here, we review recent reports on the development of high-Curie temperature Mn0.05Ge0.95 quantum dots (QDs) and successfully demonstrate electric-field control of ferromagnetism in the Mn0.05Ge0.95 quantum dots up to 300 K. Upon the application of gate-bias to a metal-oxide-semiconductor (MOS) capacitor, the ferromagnetism of the channel layer (i.e. the Mn0.05Ge0.95 quantum dots) was modulated as a function of the hole concentration. Finally, a theoretical model based upon the formation of magnetic polarons has been proposed to explain the observed field controlled ferromagnetism

Über Selbst, Identität und Blutsbande

Zick A, Stirner H. Über Selbst, Identität und Blutsbande. Gemeinsam. 1993;26:15-23