Gauge dependence of effective action and renormalization group functions in effective gauge theories

The Caswell-Wilczek analysis on the gauge dependence of the effective action and the renormalization group functions in Yang-Mills theories is generalized to generic, possibly power counting non renormalizable gauge theories. It is shown that the physical coupling constants of the classical theory can be redefined by gauge parameter dependent contributions of higher orders in $\hbar$ in such a way that the effective action depends trivially on the gauge parameters, while suitably defined physical beta functions do not depend on those parameters.Comment: 13 pages Latex file, additional comments in section

Inelastic Scattering Time for Conductance Fluctuations

We revisit the problem of inelastic times governing the temperature behavior of the weak localization correction and mesoscopic fluctuations in one- and two-dimensional systems. It is shown that, for dephasing by the electron electron interaction, not only are those times identical but the scaling functions are also the same.Comment: 10 pages Revtex; 5 eps files include

Phase Relaxation of Electrons in Disordered Conductors

Conduction electrons in disordered metals and heavily doped semiconductors at low temperatures preserve their phase coherence for a long time: phase relaxation time $\tau_\phi$ can be orders of magnitude longer than the momentum relaxation time. The large difference in these time scales gives rise to well known effects of weak localization, such as anomalous magnetoresistance. Among other interesting characteristics, study of these effects provide quantitative information on the dephasing rate $1/\tau_\phi$. This parameter is of fundamental interest: the relation between $\hbar/\tau_\phi$ and the temperature $T$ (a typical energy scale of an electron) determines how well a single electron state is defined. We will discuss the basic physical meaning of $1/\tau_\phi$ in different situations and its difference from the energy relaxation rate. At low temperatures, the phase relaxation rate is governed by collisions between electrons. We will review existing theories of dephasing by these collisions or (which is the same) by electric noise inside the sample. We also discuss recent experiments on the magnetoresistance of 1D systems: some of them show saturation of $1/\tau_\phi$ at low temperatures, the other do not. To resolve this contradiction we discuss dephasing by an external microwave field and by nonequilibrium electric noise.Comment: Order of figures and references corrected; one reference added; 15 pages, 2 figures, lecture given on 10th International Winterschool on New Developments in Solid State Physics, Mauterndorf, Salzburg, Austria; 23-27 Feb. 199

An analysis of Australia's carbon pollution reduction scheme

The authors review the decision-making since the Labour Government came into office (November 2007). The Australian Government’s ‘Carbon Pollution Reduction Scheme’ White Paper (15 December 2008) proposes that an Australian Emissions Trading Scheme (AETS) be implemented in mid-2010. Acknowledging that the scheme is comprehensive, the paper finds that in many cases, Australia will take a softer approach to climate change through the AETS than the European Union ETS(EUETS). The paper assesses key issues in the White Paper such as emissions reduction targets, GHG coverage, sectoral coverage, inclusion of unlimited quantities of offsets from Kyoto international markets and exclusion of deforestation activities

Statistical significance of fine structure in the frequency spectrum of Aharonov-Bohm conductance oscillations

We discuss a statistical analysis of Aharonov-Bohm conductance oscillations measured in a two-dimensional ring, in the presence of Rashba spin-orbit interaction. Measurements performed at different values of gate voltage are used to calculate the ensemble-averaged modulus of the Fourier spectrum and, at each frequency, the standard deviation associated to the average. This allows us to prove the statistical significance of a splitting that we observe in the h/e peak of the averaged spectrum. Our work illustrates in detail the role of sample specific effects on the frequency spectrum of Aharonov-Bohm conductance oscillations and it demonstrates how fine structures of a different physical origin can be discriminated from sample specific features.Comment: accepted for publication in PR

Aharonov-Bohm oscillations of a particle coupled to dissipative environments

The amplitude of the Bohm-Aharonov oscillations of a particle moving around a ring threaded by a magnetic flux and coupled to different dissipative environments is studied. The decay of the oscillations when increasing the radius of the ring is shown to depend on the spatial features of the coupling. When the environment is modelled by the Caldeira-Leggett bath of oscillators, or the particle is coupled by the Coulomb potential to a dirty electron gas, interference effects are suppressed beyond a finite length, even at zero temperature. A finite renormalization of the Aharonov-Bohm oscillations is found for other models of the environment.Comment: 6 page

Is weak temperature dependence of electron dephasing possible?

The first-principle theory of electron dephasing by disorder-induced two state fluctuators is developed. There exist two mechanisms of dephasing. First, dephasing occurs due to direct transitions between the defect levels caused by inelastic electron-defect scattering. The second mechanism is due to violation of the time reversal symmetry caused by time-dependent fluctuations of the scattering potential. These fluctuations originate from an interaction between the dynamic defects and conduction electrons forming a thermal bath. The first contribution to the dephasing rate saturates as temperature decreases. The second contribution does not saturate, although its temperature dependence is rather weak, $\propto T^{1/3}$. The quantitative estimates based on the experimental data show that these mechanisms considered can explain the weak temperature dependence of the dephasing rate in some temperature interval. However, below some temperature dependent on the model of dynamic defects the dephasing rate tends rapidly to zero. The relation to earlier studies of the dephasing caused by the dynamical defects is discussed.Comment: 14 pages, 6 figures, submitted to PR

Metallicity and its low temperature behavior in dilute 2D carrier systems

We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in the semiconductor. We derive a leading behavior in the transport property, which is exact in the strict 2D approximation and provides a zeroth order explanation for the strength of metallicity in various 2D carrier systems. By carefully comparing the calculated full nonlinear temperature dependence of electronic resistivity at low temperatures with the corresponding asymptotic analytic form obtained in the $T/T_F \to 0$ limit, both within the RPA screened charged impurity scattering theory, we critically discuss the applicability of the linear temperature dependent correction to the low temperature resistivity in 2D semiconductor structures. We find quite generally that for charged ionized impurity scattering screened by the electronic dielectric function (within RPA or its suitable generalizations including local field corrections), the resistivity obeys the asymptotic linear form only in the extreme low temperature limit of $T/T_F \le 0.05$. We point out the experimental implications of our findings and discuss in the context of the screening theory the relative strengths of metallicity in different 2D systems.Comment: We have substantially revised this paper by adding new materials and figures including a detailed comparison to a recent experimen

Temperature dependent resistivity of spin-split subbands in GaAs 2D hole system

We calculate the temperature dependent resistivity in spin-split subbands induced by the inversion asymmetry of the confining potential in GaAs 2D hole systems. By considering both temperature dependent multisubband screening of impurity disorder and hole-hole scattering we find that the strength of the metallic behavior depends on the symmetry of the confining potential (i.e., spin-splitting) over a large range of hole density. At low density above the metal-insulator transition we find that effective disorder reduces the enhancement of the metallic behavior induced by spin-splitting. Our theory is in good qualitative agreement with existing experiments

Quantum corrections to the conductivity of fermion - gauge field models: Application to half filled Landau level and high-TcT_c superconductors

We calculate the Altshuler-Aronov type quantum correction to the conductivity of $2d$ charge carriers in a random potential (or random magnetic field) coupled to a transverse gauge field. The gauge fields considered simulate the effect of the Coulomb interaction for the fractional quantum Hall state at half filling and for the $t-J$ model of high-$T_c$ superconducting compounds. We find an unusually large quantum correction varying linearly or quadratically with the logarithm of temperature, in different temperature regimes.Comment: 12 pages REVTEX, 1 figure. The figure is added and minor misprints are correcte