Electrical and radiation characteristics of semilarge photoconductive terahertz emitters

We present experimental characterization of semilarge photoconductive emitters, including their electrical/photoconductive parameters and terahertz spectra. A range of emitters were studied and fabricated on both LT-GaAs and SI-GaAs, having a variety of electrode geometries. The spatial cone of terahertz radiation was defined. The dependencies of the photocurrent and the terahertz power on the bias voltage and the laser power were determined. A Fourier-transform interferometer is used to determine the terahertz spectra and to clarify the effects of the substrate and electrode geometry

The high-frequency application of Double-Barrier Resonant Tunelling diodes

SIGLEAvailable from British Library Document Supply Centre- DSC:DX178132 / BLDSC - British Library Document Supply CentreGBUnited Kingdo

Parametric analysis of micromachined reflex klystrons for operation at millimeter and submillimeter wavelengths

A tool for the simulation of high frequency reflex klystrons is presented. Based on the Monte Carlo technique, this simulation includes loss mechanisms (due to the opacity of the grids) and takes into account the main peculiarities expected for device operation at millimeter and submillimeter wave frequencies. The tool has been used to study the effects of device parameters which are critical to the optimization of output power in a prototype 100 GHz micromachined structure based on a field emission electron source, namely, the electric field in the drift region and the grid distance. The results also show that this device can be used for direct generation of useful amounts of power at these frequencies

A New Pillar Geometry for Heterostructure Barrier Varactor Diodes

We report on a novel diode geometry, with reduced thermal resistance, for Heterostructure Barrier Varactor, HBV, diodes. The pillar geometry presented here involves the complete removal of the substrate, electrical contacted is made by the forward and reverse side processing of metallic pillars. We propose that there is a limit to the maximum number of barriers that can be used to increase the power capability of a HBV. An analytical model has been developed to study these effects. In considering the case of a perfect thermal heat sink the limit is found to be fourteen, in applying this model to the new pillar structure this is reduced to six

A New Pillar Geometry for Heterostructure Barrier Varactor Diodes

We report on a novel diode geometry, with reduced thermal resistance, for Heterostructure Barrier Varactor, HBV, diodes. The pillar geometry presented here involves the complete removal of the substrate, electrical contacted is made by the forward and reverse side processing of metallic pillars. We propose that there is a limit to the maximum number of barriers that can be used to increase the power capability of a HBV. An analytical model has been developed to study these effects. In considering the case of a perfect thermal heat sink the limit is found to be fourteen, in applying this model to the new pillar structure this is reduced to six

Active Micromachined Integrated Terahertz Circuits

Schottky barrier diodes have been integrated into on-chip rectangular waveguides. Two novel techniques have been developed to fabricate diodes with posts suitable for integration into waveguides. One technique produces diodes with anode diameters of the order of microns with post heights from 90 to 125 microns and the second technique produces sub-micron anodes with post heights around 20 microns. A method has been developed to incorporate these structures into a rectangular waveguide and provide a top contact onto the anode which could be used as an I.F. output in a mixer circuit. Devices have been fabricated and D.C. characterized

Technique for micro-machining millimetre-wave rectangular waveguide

A new technique is reported for micro-machining millimetre-wave rectangular waveguide components. S-parameter measurements on these structures show that they achieve lower loss than those produced using any other on-chip fabrication technique, have highly accurate dimensions, are physically robust, and are cheap and easy to manufacture

Fabrication and characterization of micromachined rectangular waveguide components for use at millimeter-wave and terahertz frequencies

The fabrication and characterization of micromachined reduced-height air-filled rectangular waveguide components suitable for integration is reported in this paper. The lithographic technique used permits structures with heights of up to 100 μm to be successfully constructed in a repeatable manner. Waveguide S-parameter measurements at frequencies between 75-110 GHz using a vector network analyzer demonstrate low loss propagation in the TE10 mode reaching 0.2 dB per wavelength. Scanning electron microscope photographs of conventional and micromachined waveguides show that the fabrication technique can provide a superior surface finish than possible with commercially available components. In order to circumvent problems in efficiently coupling free-space propagating beams to the reduced-height G-band waveguides, as well as to characterize them using quasi-optical techniques, a novel integrated micromachined slotted horn antenna has been designed and fabricated, E-, H-, and D-plane far-field antenna pattern measurements at different frequencies using a quasi-optical setup show that the fabricated structures are optimized for 180-GHz operation with an E-plane half-power beamwidth of 32° elevated 35° above the substrate, a symmetrical H-plane pattern with a half-power beamwidth of 23° and a maximum D-plane cross-polar level of -33 dB. Far-field pattern simulations using HFSS show good agreement with experimental results