Synthesis and characterization of atomically-thin graphite films on a silicon carbide substrate

This paper reports the synthesis and detailed characterization of graphite thin films produced by thermal decomposition of the (0001) face of a 6H-SiC wafer, demonstrating the successful growth of single crystalline films down to approximately one graphene layer. The growth and characterization were carried out in ultrahigh vacuum (UHV) conditions. The growth process and sample quality were monitored by low-energy electron diffraction, and the thickness of the sample was determined by core level x-ray photoelectron spectroscopy. High-resolution angle-resolved photoemission spectroscopy shows constant energy map patterns, which are very sharp and fully momentum-resolved, but nonetheless not resolution limited. We discuss the implications of this observation in connection with scanning electron microscopy data, as well as with previous studies

THE EFFECT OF PLASTIC DEFORMATION ON T1 PRECIPITATION

The enhancement of T1 precipitation in Al-Li-Cu alloys by stretching prior to aging (i.e., cold work) and the subsequent increase in alloy strength has been documented [1]. The role of matrix dislocations in the nucleation and growth of T1 plates, however, has not been studied in detail. In this paper the effect of different levels of plastic strain on the T1 particle distributions as a function of aging time at 190 C will be quantified. Additionally, the precipitation mechanism will be explored in order to better understand the role of matrix dislocations as nucleation sites and their effect on T1 plate growth