This paper reports the synthesis and detailed characterization of graphite
thin films produced by thermal decomposition of the (0001) face of a 6H-SiC
wafer, demonstrating the successful growth of single crystalline films down to
approximately one graphene layer. The growth and characterization were carried
out in ultrahigh vacuum (UHV) conditions. The growth process and sample quality
were monitored by low-energy electron diffraction, and the thickness of the
sample was determined by core level x-ray photoelectron spectroscopy.
High-resolution angle-resolved photoemission spectroscopy shows constant energy
map patterns, which are very sharp and fully momentum-resolved, but nonetheless
not resolution limited. We discuss the implications of this observation in
connection with scanning electron microscopy data, as well as with previous
studies
