Magnetic structure and phase diagram in a spin-chain system: Ca3_3Co2_2O6_6

The low-temperature structure of the frustrated spin-chain compound Ca$_3$Co$_2$O$_6$ is determined by the ground state of the 2D Ising model on the triangular lattice. At high-temperatures it transforms to the honeycomb magnetic structure. It is shown that the crossover between the two magnetic structures at 12 K arises from the entropy accumulated in the disordered chains. This interpretation is in an agreement with the experimental data. General rules for for the phase diagram of frustrated Ising chain compounds are formulated.Comment: 4 pages, 2 figure

Estimating age of spotted and spinner dolphins (Stenella attenuata and Stenella longirostris) from teeth

This paper is an account of preparation and examination techniques and criteria used to estimate age in decalcified and stained tooth thin sections from spinner and spotted dolphins. A dentinal growth layer group (GLG), composed of two thin light and two thicker dark-stained layers, is deposited annually. The GLG component layers are variably visible, but the "ideal" pattern and successive thinning of dentinal GLGs are used as a guide to determine GLG limits. Age-specific thicknesses of dentinal GLGs found in Hawaiian spinner dolphin teeth seem to be applicable to teeth of spotted dolphins and can be used as an aid in locating GLG boundaries. Cementa1 GLGs are composed of a dark-stained and alightly stained layer and usually are deposited at a rate of one per year, but may be deposited every other year or two or three times per year. Two slightly different methods of counting dentinal GLGs are presented, along with guidelines for determining whether dentinal or cementa1 GLG counts provide the best estimate of age for a specimen. (PDF contains 23 pages.

Voltage-controlled electron tunnelling from a single self-assembled quantum dot embedded in a two-dimensional-electron-gas-based photovoltaic cell

We perform high-resolution photocurrent (PC) spectroscopy to investigate resonantly the neutral exciton ground-state (X0) in a single InAs/GaAs self-assembled quantum dot (QD) embedded in the intrinsic region of an n-i-Schottky photodiode based on a two-dimensional electron gas (2DEG), which was formed from a Si delta-doped GaAs layer. Using such a device, a single-QD PC spectrum of X0 is measured by sweeping the bias-dependent X0 transition energy through that of a fixed narrow-bandwidth laser via the quantum-confined Stark effect (QCSE). By repeating such a measurement for a series of laser energies, a precise relationship between the X0 transition energy and bias voltage is then obtained. Taking into account power broadening of the X0 absorption peak, this allows for high-resolution measurements of the X0 homogeneous linewidth and, hence, the electron tunnelling rate. The electron tunnelling rate is measured as a function of the vertical electric field and described accurately by a theoretical model, yielding information about the electron confinement energy and QD height. We demonstrate that our devices can operate as 2DEG-based QD photovoltaic cells and conclude by proposing two optical spintronic devices that are now feasible.Comment: 34 pages, 11 figure

Three osculating walkers

We consider three directed walkers on the square lattice, which move simultaneously at each tick of a clock and never cross. Their trajectories form a non-crossing configuration of walks. This configuration is said to be osculating if the walkers never share an edge, and vicious (or: non-intersecting) if they never meet. We give a closed form expression for the generating function of osculating configurations starting from prescribed points. This generating function turns out to be algebraic. We also relate the enumeration of osculating configurations with prescribed starting and ending points to the (better understood) enumeration of non-intersecting configurations. Our method is based on a step by step decomposition of osculating configurations, and on the solution of the functional equation provided by this decomposition

Self-aligned 0.12mm T-gate In.53Ga.47As/In.52Al.48As HEMT Technology Utilising a Non Annealed Ohmic Contact Strategy

An InGaAs/InAlAs based HEMT structure, lattice matched to an InP substrate, is presented in which drive current and transconductance has been optimized through a double-delta doping strategy. Together with an increase in channel carrier density, this allows the use of a non-annealed ohmic contact process. HEMT devices with 120 nm standard and self-aligned T-gates were fabricated using the non-annealed ohmic process. At DC, self-aligned and standard devices exhibited transconductances of up to 1480 and 1100 mS/mm respectively, while both demonstrated current densities in the range 800 mA/mm. At RF, a cutoff frequency f/sub T/ of 190 GHz was extracted for the self-aligned device. The DC characteristics of the standard devices were then calibrated and modelled using a compound semiconductor Monte Carlo device simulator. MC simulations provide insight into transport within the channel and illustrate benefits over a single delta doped structure

Generating-function method for tensor products

This is the first of two articles devoted to a exposition of the generating-function method for computing fusion rules in affine Lie algebras. The present paper is entirely devoted to the study of the tensor-product (infinite-level) limit of fusions rules. We start by reviewing Sharp's character method. An alternative approach to the construction of tensor-product generating functions is then presented which overcomes most of the technical difficulties associated with the character method. It is based on the reformulation of the problem of calculating tensor products in terms of the solution of a set of linear and homogeneous Diophantine equations whose elementary solutions represent ``elementary couplings''. Grobner bases provide a tool for generating the complete set of relations between elementary couplings and, most importantly, as an algorithm for specifying a complete, compatible set of ``forbidden couplings''.Comment: Harvmac (b mode : 39 p) and Pictex; this is a substantially reduced version of hep-th/9811113 (with new title); to appear in J. Math. Phy

Lattice Point Generating Functions and Symmetric Cones

We show that a recent identity of Beck-Gessel-Lee-Savage on the generating function of symmetrically contrained compositions of integers generalizes naturally to a family of convex polyhedral cones that are invariant under the action of a finite reflection group. We obtain general expressions for the multivariate generating functions of such cones, and work out the specific cases of a symmetry group of type A (previously known) and types B and D (new). We obtain several applications of the special cases in type B, including identities involving permutation statistics and lecture hall partitions.Comment: 19 page

Design, fabrication, and characterization of deep-etched waveguide gratings

One-dimensional (1-D) deep-etched gratings on a specially grown AlGaAs wafer were designed and fabricated. The gratings were fabricated using state-of-the-art electron beam lithography and high-aspect-ratio reactive ion etching (RIE) in order to achieve the required narrow deep air slots with good accuracy and reproducibility. Since remarkable etch depths (up to 1.5 /spl mu/m), which completely cut through the waveguide core layer, have been attained, gratings composed of only five periods (and, thus, shorter than 6 /spl mu/m) have a bandgap larger than 100 nm. A defect was introduced by increasing the width of the central semiconductor tooth to create microcavities that exhibit a narrow transmission peak (less than 7 nm) around the wavelength of 1530 nm. The transmission spectra between 1460 and 1580 nm have been systematically measured, and the losses have been estimated for a set of gratings, both with and without a defect, for different periods and air slot dimensions. Numerical results obtained via a bidirectional beam propagation code allowed the evaluation of transmissivity, reflectivity, and diffraction losses. By comparing experimental results with the authors' numerical findings, a clear picture of the role of the grating's geometric parameters in determining its spectral features and diffractive losses is illustrated

Charge-based silicon quantum computer architectures using controlled single-ion implantation

We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart, one of which is singly ionized. The lowest two energy states of the remaining electron form the logical states. Surface electrodes control the qubit using voltage pulses and dual single electron transistors operating near the quantum limit provide fast readout with spurious signal rejection. A low energy (keV) ion beam is used to implant the phosphorus atoms in high-purity Si. Single atom control during the implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure, while positional accuracy is provided by a nanomachined resist mask. We describe a construction process for implanted single atom and atom cluster devices with all components registered to better than 20 nm, together with electrical characterisation of the readout circuitry. We also discuss universal one- and two-qubit gate operations for this architecture, providing a possible path towards quantum computing in silicon.Comment: 9 pages, 5 figure