Nanoscopic processes of Current Induced Switching in thin tunnel junctions

In magnetic nanostructures one usually uses a magnetic field to commute between two resistance (R) states. A less common but technologically more interesting alternative to achieve R-switching is to use an electrical current, preferably of low intensity. Such Current Induced Switching (CIS) was recently observed in thin magnetic tunnel junctions, and attributed to electromigration of atoms into/out of the insulator. Here we study the Current Induced Switching, electrical resistance, and magnetoresistance of thin MnIr/CoFe/AlO$_x$/CoFe tunnel junctions. The CIS effect at room temperature amounts to 6.9% R-change between the high and low states and is attributed to nanostructural rearrangements of metallic ions in the electrode/barrier interfaces. After switching to the low R-state some electro-migrated ions return to their initial sites through two different energy channels. A low (high) energy barrier of $\sim$0.13 eV ($\sim$0.85 eV) was estimated. Ionic electromigration then occurs through two microscopic processes associated with different types of ions sites/defects. Measurements under an external magnetic field showed an additional intermediate R-state due to the simultaneous conjugation of the MR (magnetic) and CIS (structural) effects.Comment: 6 pages, 4 figure

Exponential Distributions in a Mechanical Model for Earthquakes

We study statistical distributions in a mechanical model for an earthquake fault introduced by Burridge and Knopoff [R. Burridge and L. Knopoff, {\sl Bull. Seismol. Soc. Am.} {\bf 57}, 341 (1967)]. Our investigations on the size (moment), time duration and number of blocks involved in an event show that exponential distributions are found in a given range of the paramenter space. This occurs when the two kinds of springs present in the model have the same, or approximately the same, value for the elastic constants. Exponential distributions have also been seen recently in an experimental system to model earthquake-like dynamics [M. A. Rubio and J. Galeano, {\sl Phys. Rev. E} {\bf 50}, 1000 (1994)].Comment: 11 pages, uuencoded (submitted to Phys. Rev. E

Electromigration in thin tunnel junctions with ferromagnetic/nonmagnetic: nanoconstrictions, local heating, and direct and wind forces

Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes \emph{i.e} FM/I/FM. This effect was attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier (I). Here we study how the CIS effect is influenced by a thin non-magnetic (NM) Ta layer, deposited just below the AlO$_x$ insulating barrier in tunnel junctions of the type FM/NM/I/FM (FM=CoFe). Enhanced resistance switching occurs with increasing maximum applied current (\Imax), until a plateau of constant CIS is reached for \Imax\sim65 mA (CIS$\sim$60%) and above. However, such high electrical currents also lead to a large ($\sim$9%) irreversible resistance decrease, indicating barrier degradation. Anomalous voltage-current characteristics with negative derivative were also observed near \pm\Imax and this effect is here attributed to heating in the tunnel junction. One observes that the current direction for which resistance switches in FM/NM/I/FM (clockwise) is opposite to that of FM/I/FM tunnel junctions (anti-clockwise). This effect will be discussed in terms of a competition between the electromigration contributions due to the so called direct and wind forces. It will be shown that the direct force is likely to dominate electromigration in the Ta (NM) layers, while the wind contribution likely dominates in the CoFe (FM) layers

Multiple UAV teams for multiple tasks

In a search and prosecute mission, multiple heterogeneous unmanned aerial vehicles UAVs that carry different resources need to perform the classify, prosecute and battle damage assessment (BDA) tasks on targets sequentially. Depending on the target resource requirement, it may be necessary to deploy a coalition of UAVs to perform the action. In this paper, we propose coalition formation algorithms that have low computational overhead to determine coalitions for the prosecute and the BDA tasks. We also develop a simultaneous strike mechanism based on Dubins curves for the UAVs to prosecute the target simultaneously. Monte-Carlo simulation results are presented to show how the algorithms work and the effect of increasing the number of BDA tasks on the mission performance. © 2009 IEEE

Electrical current-driven pinhole formation and insulator-metal transition in tunnel junctions

Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. The CIS effect is here studied in TJs with two thin (20 \AA) non-magnetic (NM) Ta electrodes inserted above and below the insulating barrier. We observe resistance (R) switching for positive applied electrical current (flowing from the bottom to the top lead), characterized by a continuous resistance decrease and associated with current-driven displacement of metallic ions from the bottom electrode into the barrier (thin barrier state). For negative currents, displaced ions return into their initial positions in the electrode and the electrical resistance gradually increases (thick barrier state). We measured the temperature (T) dependence of the electrical resistance of both thin- and thick-barrier states ($R_b$ and R$_B$ respectively). Experiments showed a weaker R(T) variation when the tunnel junction is in the $R_b$ state, associated with a smaller tunnel contribution. By applying large enough electrical currents we induced large irreversible R-decreases in the studied TJs, associated with barrier degradation. We then monitored the evolution of the R(T) dependence for different stages of barrier degradation. In particular, we observed a smooth transition from tunnel- to metallic-dominated transport. The initial degradation-stages are related to irreversible barrier thickness decreases (without the formation of pinholes). Only for later barrier degradation stages do we have the appearance of metallic paths between the two electrodes that, however, do not lead to metallic dominated transport for small enough pinhole radius.Comment: 10 pages, 3 figure

Universal Programmable Quantum Circuit Schemes to Emulate an Operator

Unlike fixed designs, programmable circuit designs support an infinite number of operators. The functionality of a programmable circuit can be altered by simply changing the angle values of the rotation gates in the circuit. Here, we present a new quantum circuit design technique resulting in two general programmable circuit schemes. The circuit schemes can be used to simulate any given operator by setting the angle values in the circuit. This provides a fixed circuit design whose angles are determined from the elements of the given matrix-which can be non-unitary-in an efficient way. We also give both the classical and quantum complexity analysis for these circuits and show that the circuits require a few classical computations. They have almost the same quantum complexities as non-general circuits. Since the presented circuit designs are independent from the matrix decomposition techniques and the global optimization processes used to find quantum circuits for a given operator, high accuracy simulations can be done for the unitary propagators of molecular Hamiltonians on quantum computers. As an example, we show how to build the circuit design for the hydrogen molecule.Comment: combined with former arXiv:1207.174