Abundances and kinematics for ten anticentre open clusters

Open clusters are distributed all across the disk and are convenient tracers of its properties. In particular, outer disk clusters bear a key role for the investigation of the chemical evolution of the Galactic disk. The goal of this study is to derive homogeneous elemental abundances for a sample of ten outer disk OCs, and investigate possible links with disk structures such as the Galactic Anticenter Stellar Structure. We analyse high-resolution spectra of red giants, obtained from the HIRES@Keck and UVES@VLT archives. We derive elemental abundances and stellar atmosphere parameters by means of the classical equivalent width method. We also performed orbit integrations using proper motions. The Fe abundances we derive trace a shallow negative radial metallicity gradient of slope -0.027+/-0.007 dex.kpc-1 in the outer 12 kpc of the disk. The [alpha/Fe] gradient appears flat, with a slope of 0.006+/-0.007 dex.kpc-1 . The two outermost clusters (Be 29 and Sau 1) appear to follow elliptical orbits. Be 20 also exhibits a peculiar orbit with a large excursion above the plane. The irregular orbits of the three most metal-poor clusters (of which two are located at the edge of the Galactic disk), if confirmed by more robust astrometric measurements such as those of the Gaia mission, are compatible with an inside-out formation scenario for the Milky Way, in which extragalactic material is accreted onto the outer disk. We cannot determine if Be 20, Be 29,and Sau 1 are of extragalactic origin, as they may be old genuine Galactic clusters whose orbits were perturbed by accretion events or minor mergers in the past 5 Gyr, or they may be representants of the thick disk population. The nature of these objects is intriguing and deserves further investigations in the near future.Comment: 17 pages, 9 figures; accepted for publication in A&

Asiago eclipsing binaries program. III. V570 Per

The orbit and physical parameters of the previously unsolved SB2 EB V570 Per are derived using high resolution Asiago Echelle spectroscopy and B, V photo-electric photometry. The metallicity from chi^2 analysis is [M/H]=+0.02 +/- 0.03, and reddening from interstellar NaI and KI absorption lines is E(B-V) =0.023 +/- 0.007. The two components have masses of 1.449 +/- 0.006 and 1.350 +/- 0.006 Msun and spectral types F3 and F5, respectively. They are both still within the Main Sequence band (T_1 =6842 +/- 25 K, T_2 =6562 +/- 25 K from chi^2 analysis, R_1 =1.523 +/- 0.030, R_2 =1.388 +/- 0.019 Rsun) and are dynamically relaxed to co-rotation with the orbital motion (Vrot sin i_{1,2} =40 and 36 (+/-1) km/sec). The distance to V570 Per obtained from the orbital solution is 123 +/- 2 pc, in excellent agreement with the revised Hipparcos distance of 123 +/- 11 pc. The observed properties of V570 Per components are compared to BaSTI models computed on purpose for exactly the observed masses and varied chemical compositions. This system is interesting since both components have their masses in the range where the efficiency of convective core overshooting has to decrease with the total mass as a consequence of the decreasing size of the convective core during the central H-burning stage. Our numerical simulations show that, a small but not null overshooting is required, with efficiencies lambda_{OV} =0.14 and 0.11 for the 1.449 and 1.350 Msun components, respectively. This confirms the finding of Paper II on the similar system V505 Per. At the approx 0.8 Gyr age of the system, the element diffusion has reduced the surface metallicity of the models from the initial [M/H]=+0.17 to [M/H]=+0.02, in perfect agreement with the spectroscopically derived [M/H]=+0.02 +/- 0.03 value.Comment: accepted by A&A. This revised upload to astro-ph correct a formatting error generated by uncorrect A&A style fil

Through Silicon Vias in MEMS packaging, a review

Trough Silicon Via (TSV) is a key enabling technology to achieve the integration of various dies by exploiting the third dimension. This allow the integration of heterogeneous chips in a single package (2.5D integration) or to achieve higher integration densities of transistors (3D integration). These vertical interconnections are widely used for both IC and MEMS devices. This paper reviews TSV technology focusing on their implementation in MEMS sensors with a broad overview on the various fabrication approaches and their constraints in terms of process compatibility. A case study of an inertial MEMS sensor will then be presented.publishedVersio

Wafer bonding process for zero level vacuum packaging of MEMS

It is well known that the packaging of electronic devices is of paramount importance, none more so than in MEMS were fragile mechanical elements are realized. Among the different approaches, wafer to wafer bonding guarantees the advantages of the wafer scaling and provides protection of the devices during the final phase of fabrication. Direct bonding, also known as fusion bonding, is seldom implemented in MEMS fabrication due to the high surface quality required, the high temperature involved and the compulsory wet activation process. In this paper a direct bonding process for MEMS inertial sensor without the need of any wet activation step is presented.acceptedVersio

Wafer bonding process for zero level vacuum packaging of MEMS

It is well known that the packaging of electronic devices is of paramount importance, none more so than in MEMS were fragile mechanical elements are realized. Among the different approaches, wafer to wafer bonding guarantees the advantages of the wafer scaling and provides protection of the devices during the final phase of fabrication. Direct bonding, also known as fusion bonding, is seldom implemented in MEMS fabrication due to the high surface quality required, the high temperature involved and the compulsory wet activation process. In this paper a direct bonding process for MEMS inertial sensor without the need of any wet activation step is presented.acceptedVersio

The broad band spectral properties of galactic X-ray binary pulsars

BeppoSAX observed several galactic binary X-ray pulsars during the Science Verification Phase and in the first year of the regular program. The complex emission spectra of these sources are an ideal target for the BeppoSAX instrumentation, that can measure the emission spectra in an unprecedented broad energy band. Using this capability of BeppoSAX a detailed observational work can be done on the galactic X-ray pulsars. In particular the 0.1-200 keV energy band allows the shape of the continuum emission to be tightly constrained. A better determination of the underlying continuum allows an easier detection of features superimposed onto it, both at low energy (Fe K and L, Ne lines) and at high energies (cyclotron features). We report on the spectral properties of a sample of X-ray pulsars observed with BeppoSAX comparing the obtained results. Some ideas of common properties are also discussed and compared with our present understanding of the emission mechanisms and processes.Comment: 6 pages, 2 figures. Uses espcrc2.sty (included).To appear in Proceedings of "The Active X-ray Sky: Results from BeppoSAX and Rossi-XTE