Reactively sputtered RuO2 diffusion barriers

The thermal stability of reactively sputtered RuO2 films is investigated from the point of view of their application as diffusion barriers in silicon contact metallizations with an Al overlayer. Backscattering spectra of Si/RuO2/Al samples and electrical measurements on shallow junction diodes with Si/TiSi2.3/RuO2/Al contacts both show that RuO2 films are effective diffusion barriers between Al and Si for 30-min annealing at temperatures as high as 600°C

WxN1–x alloys as diffusion barriers between Al and Si

Reactively sputtered tungsten nitride (WxN1–x) layers are investigated as diffusion barriers between Al overlayers and Si shallow n + -p junctions. Both amorphous W80 N20 and polycrystalline W60 N40 films were found to be very effective in preserving the integrity of the n + -p diodes for 30-min vacuum annealing up to 575 °C. Diode failure at higher temperatures is caused by localized penetration of Al into through the WxN1–x barriers. The effectiveness of the barrier decreases for polycrystalline W90 N10 and is worse for pure W

Thermal stability and nitrogen redistribution in the〈Si〉/Ti/W–N/Al metallization scheme

Backscattering spectrometry, Auger electron spectroscopy, and x‐ray diffraction have been used to monitor the thin‐film reactions and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization system. It is found that nitrogen in the W–N layer redistributes into Ti after annealing at temperatures above 500 °C. As a consequence of this redistribution of nitrogen, a significant amount of interdiffusion between Al and the underlayers is observed after annealing at 550 °C. This result contrasts markedly with that for the 〈Si〉/W–N/Al system, where no interdiffusion can be detected after the same thermal treatment. We attribute this redistribution of nitrogen to the stronger affinity of Ti for nitrogen than W. If the Ti layer is replaced by a sputtered TiSi_(2.3) film, no redistribution of nitrogen or reactions can be detected after annealing at 550 °C for 30 min

TiAl3 formation by furnace annealing of Ti/Al bilayers and the effect of impurities

Reactions of Ti/Al couples induced by furnace annealing were investigated (at elevated temperature) using large-grained Al substrates and vacuum-evaporated bilayers of both sequences. 4 He MeV backscattering spectrometry was principally used to monitor the reactions. Profiles of oxygen impurity were obtained by elastic 16 O(alpha,alpha)16 O resonant scattering. In the range of 460–515 °C, TiAl3 forms as a laterally uniform layer at the Ti/Al interface. The thickness of this compound layer increases as (annealing time)1/2. The activation energy is 1.9–2.0±0.1 eV. For evaporated bilayers on an oxidized Si substrate, the sequence of the bilayers does not effect the growth mechanism of TiAl3 , but the growth rate of samples with the Ti on top is lower than that of samples with Al on top, that is, oxygen in Ti/Al samples can reduce the reaction rate by decreasing the pre-exponential factor. Oxygen already contained in the Ti film and oxygen from the annealing ambient are incorporated in the growing TiAl3 compound during thermal annealing. In addition, a TiAl3 layer also forms at the free Ti surface during vacuum annealing when the oxygen-containing contaminants in the ambient are minimized. So far, we succeeded in accomplishing this only for large-grained Al substrates. We conclude that the formation of the TiAl3 compound at the surface is controlled by nucleation and depends sensitively on the condition of the surface layer of the Ti film

Amosphous diffusion barriers

Amorphous W-Zr and W-N alloys were investigated as diffusion barriers in silicon metallization schemes. Data were presented showing that amorphous W-Zr crystallizes at 900 C, which is 200 C higher than amorphous W-Ni films, and that both films react with metallic overlayers at temperatures far below the crystllization temperature. Also, W-N alloys (crystalline temperature of 600 C) were successfully incorporated as a diffusion barrier in contact structures with both Al and Ag overlayers. The thermal stability of the electrical characteristics of shallow n(+)p junctions significantly improved by incorporating W-N layers in the contact system. One important fact demonstated was the critical influence of the deposition parameters during formation of these carriers

Semi-classical Characters and Optical Model Description of Heavy Ion Scattering, Direct Reactions, and Fusion at Near-barrier Energies

An approach is proposed to calculate the direct reaction (DR) and fusion probabilities for heavy ion collisions at near-Coulomb-barrier energies as functions of the distance of closest approach D within the framework of the optical model that introduces two types of imaginary potentials, DR and fusion. The probabilities are calculated by using partial DR and fusion cross sections, together with the classical relations associated with the Coulomb trajectory. Such an approach makes it possible to analyze the data for angular distributions of the inclusive DR cross section, facilitating the determination of the radius parameters of the imaginary DR potential in a less ambiguous manner. Simultaneous $\chi^{2}$-analyses are performed of relevant data for the $^{16}$O+$^{208}$Pb system near the Coulomb-barrier energy

Simultaneous Optical Model Analyses of Elastic Scattering, Breakup, and Fusion Cross Section Data for the 6^{6}He + 209^{209}Bi System at Near-Coulomb-Barrier Energies

Based on an approach recently proposed by us, simultaneous $\chi^{2}$-analyses are performed for elastic scattering, direct reaction (DR) and fusion cross sections data for the $^{6}$He+$^{209}$Bi system at near-Coulomb-barrier energies to determine the parameters of the polarization potential consisting of DR and fusion parts. We show that the data are well reproduced by the resultant potential, which also satisfies the proper dispersion relation. A discussion is given of the nature of the threshold anomaly seen in the potential

Pressure Induced Hydration Dynamics of Membranes

Pressure-jump initiated time-resolved x-ray diffraction studies of dynamics of the hydration of the hexagonal phase in biological membranes show that (i) the relaxation of the unit cell spacing is non-exponential in time; (ii) the Bragg peaks shift smoothly to their final positions without significant broadening or loss in crystalline order. This suggests that the hydration is not diffusion limited but occurs via a rather homogeneous swelling of the whole lattice, described by power law kinetics with an exponent $\beta = 1.3 \pm 0.2$.Comment: REVTEX 3, 10 pages,3 figures(available on request),#

On the energy of homogeneous cosmologies

An energy for the homogeneous cosmological models is presented. More specifically, using an appropriate natural prescription, we find the energy within any region with any gravitational source for a large class of gravity theories--namely those with a tetrad description--for all 9 Bianchi types. Our energy is given by the value of the Hamiltonian with homogeneous boundary conditions; this value vanishes for all regions in all Bianchi class A models, and it does not vanish for any class B model. This is so not only for Einstein's general relativity but, moreover, for the whole 3-parameter class of tetrad-teleparallel theories. For the physically favored one parameter subclass, which includes the teleparallel equivalent of Einstein's theory as an important special case, the energy for all class B models is, contrary to expectation, negative.Comment: 11 pages, reformated with minor change