Tuning the bandgap of Cs2AgBiBr6 through dilute tin alloying.

The promise of lead halide hybrid perovskites for optoelectronic applications makes finding less-toxic alternatives a priority. The double perovskite Cs2AgBiBr6 (1) represents one such alternative, offering long carrier lifetimes and greater stability under ambient conditions. However, the large and indirect 1.95 eV bandgap hinders its potential as a solar absorber. Here we report that alloying crystals of 1 with up to 1 atom% Sn results in a bandgap reduction of up to ca. 0.5 eV while maintaining low toxicity. Crystals can be alloyed with up to 1 atom% Sn and the predominant substitution pathway appears to be a ∼2 : 1 substitution of Sn2+ and Sn4+ for Ag+ and Bi3+, respectively, with Ag+ vacancies providing charge compensation. Spincoated films of 1 accommodate a higher Sn loading, up to 4 atom% Sn, where we see mostly Sn2+ substitution for both Ag+ and Bi3+. Density functional theory (DFT) calculations ascribe the bandgap redshift to the introduction of Sn impurity bands below the conduction band minimum of the host lattice. Using optical absorption spectroscopy, photothermal deflection spectroscopy, X-ray absorption spectroscopy, 119Sn NMR, redox titration, single-crystal and powder X-ray diffraction, multiple elemental analysis and imaging techniques, and DFT calculations, we provide a detailed analysis of the Sn content and oxidation state, dominant substitution sites, and charge-compensating defects in Sn-alloyed Cs2AgBiBr6 (1:Sn) crystals and films. An understanding of heterovalent alloying in halide double perovskites opens the door to a wider breadth of potential alloying agents for manipulating their band structures in a predictable manner

Tuning Defects in a Halide Double Perovskite with Pressure

Dopant defects in semiconductors can trap charge carriers or ionize to produce charge carriers playing a critical role in electronic transport. Halide perovskites are a technologically important semiconductor family with a large pressure response. Yet, to our knowledge, the effect of high pressures on defects in halide perovskites has not been experimentally investigated. Here, we study the structural, optical, and electronic consequences of compressing the small-bandgap double perovskites Cs2AgTlX6(X = Cl or Br) up to 56 GPa. Mild compression to 1.7 GPa increases the conductivity of Cs2AgTlBr6by ca. 1 order of magnitude and decreases its bandgap from 0.94 to 0.7 eV. Subsequent compression yields complex optoelectronic behavior: The bandgap varies by 1.2 eV and conductivity ranges by a factor of 104. These conductivity changes cannot be explained by the evolving bandgap. Instead, they can be understood as tuning of the bromine vacancy defect with pressure varying between a delocalized shallow defect state with a small ionization energy and a localized deep defect state with a large ionization energy. Activation energy measurements reveal that the shallow-to-deep defect transition occurs near 1.5 GPa, well before the cubic-to-tetragonal phase transition. An analysis of the orbital interactions in Cs2AgTlBr6illustrates how the bromine vacancy weakens the adjacent Tl s-Br p antibonding interaction, driving the shallow-to-deep defect transition. Our orbital analysis leads us to propose that halogen vacancies are most likely to be shallow donors in halide double perovskites that have a conduction band derived from the octahedral metal's s orbitals

Chemical Approaches to Addressing the Instability and Toxicity of Lead–Halide Perovskite Absorbers

The impressive rise in efficiencies of solar cells employing the three-dimensional (3D) lead–iodide perovskite absorbers APbI₃ (A = monovalent cation) has generated intense excitement. Although these perovskites have remarkable properties as solar-cell absorbers, their potential commercialization now requires a greater focus on the materials’ inherent shortcomings and environmental impact. This creates a challenge and an opportunity for synthetic chemists to address these issues through the design of new materials. Synthetic chemistry offers powerful tools for manipulating the magnificent flexibility of the perovskite lattice to expand the number of functional analogues to APbI₃. To highlight improvements that should be targeted in new materials, here we discuss the intrinsic instability and toxicity of 3D lead–halide perovskites. We consider possible sources of these instabilities and propose methods to overcome them through synthetic design. We also discuss new materials developed for realizing the exceptional photophysical properties of lead–halide perovskites in more environmentally benign materials. In this Forum Article, we provide a brief overview of the field with a focus on our group’s contributions to identifying and addressing problems inherent to 3D lead–halide perovskites

Charge Carrier Dynamics in Cs₂AgBiBr₆ Double Perovskite

Double perovskites, comprising two different cations, are potential nontoxic alternatives to lead halide perovskites. Here, we characterized thin films and crystals of Cs2AgBiBr6 by time-resolved microwave conductance (TRMC), which probes formation and decay of mobile charges upon pulsed irradiation. Optical excitation of films results in the formation of charges with a yield times mobility product, φΣμ > 1 cm2/Vs. On excitation of millimeter-sized crystals, the TRMC signals show, apart from a fast decay, a long-lived tail. Interestingly, this tail is dominant when exciting close to the bandgap, implying the presence of mobile charges with microsecond lifetimes. From the temperature and intensity dependence of the TRMC signals, we deduce a shallow trap state density of around 1016/cm3 in the bulk of the crystal. Despite this high concentration, trap-assisted recombination of charges in the bulk appears to be slow, which is promising for photovoltaic applications.ChemE/Opto-electronic Material

Defect-Induced Band-Edge Reconstruction of a Bismuth-Halide Double Perovskite for Visible-Light Absorption

Halide double perovskites have recently been developed as less toxic analogs of the lead perovskite solar-cell absorbers APbX₃ (A = monovalent cation; X = Br or I). However, all known halide double perovskites have large bandgaps that afford weak visible-light absorption. The first halide double perovskite evaluated as an absorber, Cs₂AgBiBr₆ (<b>1</b>), has a bandgap of 1.95 eV. Here, we show that dilute alloying decreases <b>1</b>’s bandgap by ca. 0.5 eV. Importantly, time-resolved photoconductivity measurements reveal long-lived carriers with microsecond lifetimes in the alloyed material, which is very promising for photovoltaic applications. The alloyed perovskite described herein is the first double perovskite to show comparable bandgap energy and carrier lifetime to those of (CH₃NH₃)­PbI₃. By describing how energy- and symmetry-matched impurity orbitals, at low concentrations, dramatically alter <b>1</b>’s band edges, we open a potential pathway for the large and diverse family of halide double perovskites to compete with APbX₃ absorbers