Core-shell carbon-polymer quantum dot passivation for near infrared perovskite light emitting diodes

High-performance perovskite light-emitting diodes (PeLEDs) require a high quality perovskite emitter and appropriate charge transport layers to facilitate charge injection and transport within the device. Solution-processed n-type metal oxides represent a judicious choice for the electron transport layer (ETL); however, they don't always present suitable surface properties and energetics in order to be compatible with the perovskite emitter. Moreover, the emitter itself exhibits poor nanomorphology and defect traps that compromise the device performance. Here we modulate the surface properties and interface energetics of the tin oxide (SnO2) ETL with the perovskite emitter by using an amino functionalized difluoro{2-[1-(3,5-dimethyl-2H-pyrrol-2-ylidene-N)ethyl]-3,5-dimethyl-1H-pyrrolato-N}boron (BDP) compound and passivate the defects present in the perovskite with carbon-polymer core-shell quantum dots (PCDs) inserted into the perovskite precursor. Both these approaches synergistically improve the perovskite layer nanomorphology and enhance the radiative recombination. These properties resulted in the fabrication of near infrared (NIR) PeLEDs based on formamidinium lead iodide (FAPbI3) with a high radiance of 92 W sr-1 m-2, an external quantum efficiency (EQE) of 14% and reduced efficiency roll-off

Triazine-Substituted Zinc Porphyrin as an Electron Transport Interfacial Material for Efficiency Enhancement and Degradation Retardation in Planar Perovskite Solar Cells

Motivated by the excellent electron-transfer capability of porphyrin molecules in natural photosynthesis, we introduce here the first application of a porphyrin compound to improve the performance of planar perovskite solar cells. The insertion of a thin layer consisting of a triazine-substituted Zn porphyrin between the TiO2 electron transport layer and the CH3NH3PbI3 perovskite film significantly augmented electron transfer toward TiO2 while also sufficiently improved the morphology of the perovskite film. The devices employing porphyrin-modified TiO2 exhibited a significant increase in the short-circuit current densities and a small increase in the fill factor. As a result, they delivered a maximum power conversion efficiency (PCE) of 16.87% (average 14.33%), which represents a 12% enhancement compared to 15.01% (average 12.53%) of the reference cell. Moreover, the porphyrin-modified cells exhibited improved hysteretic behavior and a higher stabilized power output of 14.40% compared to 10.70% of the reference devices. Importantly, nonencapsulated perovskite solar cells embedding a thin porphyrin interlayer showed an elongated lifetime retaining 86% of the initial PCE after 200 h, while the reference devices exhibited higher efficiency loss due to faster decomposition of CH3NH3PbI3 to PbI2. © 2018 American Chemical Society

Phosphorous Diffusion in N2+ -Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

In this work we present a systematic study on post-implantation phosphorous diffusion control in Ge by co-implanted nitrogen in combination with various surface capping layers (Al2O3, SiO2 and Si3N4). Phosphorous has been implanted at low energy (11 keV) and high dose (1015 cm−2) in p-Ge (100) already implanted or not with low energy (10 keV−5 × 1014 cm−2) N2+. Flash Lamp Annealing (FLA) at 800–850°C for 20 ms in inert ambient has been used as post-implantation annealing scheme. In the absence of nitrogen, significant substrate damage and capping layer deterioration prevents a reliable comparison among the three capping materials. The presence of nitrogen in the Ge substrate, effectively suppresses the damage observed after the FLA. In this case, P diffusion is additionally retarded in the presence of Al2O3 as compared to SiO2 and Si3N4. The experimental results constitute a direct evidence of the action of the three capping layers as sinks for Ge vacancies with different interface recombination velocities. On the contrary, the nitrogen diffusion data suggest that interface recombination velocities of Ge interstitials are almost independent of the capping layer choice

Core-shell carbon-polymer quantum dot passivation for near infrared perovskite light emitting diodes

High-performance perovskite light-emitting diodes (PeLEDs) require a high quality perovskite emitter and appropriate charge transport layers to facilitate charge injection and transport within the device. Solution-processed n-type metal oxides represent a judicious choice for the electron transport layer (ETL); however, they do not always present surface properties and energetics compatible with the perovskite emitter. Moreover, the emitter itself exhibits poor nanomorphology and defect traps that compromise the device performance. Here, we modulate the surface properties and interface energetics between the tin oxide (SnO2) ETL with the perovskite emitter by using an amino functionalized difluoro{2-[1-(3,5-dimethyl-2H-pyrrol-2-ylidene-N)ethyl]-3,5-dimethyl-1H-pyrrolato-N}boron compound and passivate the defects present in the perovskite matrix with carbon-polymer core-shell quantum dots inserted into the perovskite precursor. Both these approaches synergistically improve the perovskite layer nanomorphology and enhance the radiative recombination. These properties resulted in the fabrication of near-infrared PeLEDs based on formamidinium lead iodide (FAPbI3) with a high radiance of 92 W sr-1 m-2, an external quantum efficiency (EQE) of 14%, reduced efficiency roll-off and prolonged lifetime. In particular, the modified device retained 80% of the initial EQE (T80) for 33 h compared to 6 h of the reference cell. © 2022 The Author(s). Published by IOP Publishing Ltd