200 research outputs found

    Charge dynamics in the half-metallic ferromagnet CrO\u3csub\u3e2\u3c/sub\u3e

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    Infrared spectroscopy is used to investigate the electronic structure and charge carrier relaxation in crystalline films of CrO2 which is the simplest of all half-metallic ferromagnets. Chromium dioxide is a bad metal at room temperature but it has a remarkably low residual resistivity (\u3c5 \u3eμΩ cm) despite the small spectral weight associated with free carrier absorption. The infrared measurements show that low residual resistivity is due to the collapse of the scattering rate at ω\u3c2000 \u3ecm-1. The blocking of the relaxation channels at low v and T can be attributed to the unique electronic structure of a half-metallic ferromagnet. In contrast to other ferromagnetic oxides, the intraband spectral weight is constant below the Curie temperature

    Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor

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    The band structure of a prototypical dilute ferromagnetic semiconductor, Ga1x_{1-x}Mnx_{x}As, is studied across the phase diagram via optical spectroscopy. We prove that the Fermi energy (EFE_{F}) resides in a Mn induced impurity band (IB). This conclusion is based upon careful analysis of the frequency and temperature dependence of the optical conductivity (σ1(ω,T)\sigma_{1}(\omega,T)). From our analysis of σ1(ω,T)\sigma_{1}(\omega,T) we infer a large effective mass (mm^*) of the carriers, supporting the view that conduction occurs in an IB. Our results also provide useful insights into the transport properties of Mn-doped GaAs.Comment: 4 pages, 4 figure

    On the peak in the far-infrared conductivity of strongly anisotropic cuprates

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    We investigate the far-infrared and submillimeter-wave conductivity of electron-doped La_(2-x)Ce_xCuO_4 tilted 1 degree off from the ab-plane. The effective conductivity measured for this tilt angle reveals an intensive peak at finite frequency (\nu ~ 50 cm{-1}) due to a mixing of the in-plane and out-of-plane responses. The peak disappears for the pure in-plane response and transforms to the Drude-like contribution. Comparative analysis of the mixed and the in-plane contributions allows to extract the c-axis conductivity which shows a Josephson plasma resonance at 11.7 cm{-1} in the superconducting state.Comment: 4 pages, 4 figures include

    Non-Drude Optical Conductivity of (III,Mn)V Ferromagnetic Semiconductors

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    We present a numerical model study of the zero-temperature infrared optical properties of (III,Mn)V diluted magnetic semiconductors. Our calculations demonstrate the importance of treating disorder and interaction effects simultaneously in modelling these materials. We find that the conductivity has no clear Drude peak, that it has a broadened inter-band peak near 220 meV, and that oscillator weight is shifted to higher frequencies by stronger disorder. These results are in good qualitative agreement with recent thin film absorption measurements. We use our numerical findings to discuss the use of f-sum rules evaluated by integrating optical absorption data for accurate carrier-density estimates.Comment: 7 pages, 3 figure

    Sum rules and electrodynamics of high-Tc cuprates in the pseudogap state

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    We explore connections between the electronic density of states (DOS) in a conducting system and the frequency dependence of the scattering rate 1/τ(ω)1/\tau(\omega) inferred from infrared spectroscopy. We show that changes in the DOS upon the development of energy gaps can be reliably tracked through the examination of the 1/τ(ω)1/\tau(\omega) spectra using the sum rules discussed in the text. Applying this analysis to the charge dynamics in high-TcT_c cuprates we found radically different trends in the evolution of the DOS in the pseudogap state and in the superconducting state.Comment: 4 pages, 3 figure

    Infrared magneto-optical properties of (III,Mn)V ferromagetic semiconductors

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    We present a theoretical study of the infrared magneto-optical properties of ferromagnetic (III,Mn)V semiconductors. Our analysis combines the kinetic exchange model for (III,Mn)V ferromagnetism with Kubo linear response theory and Born approximation estimates for the effect of disorder on the valence band quasiparticles. We predict a prominent feature in the ac-Hall conductivity at a frequency that varies over the range from 200 to 400 meV, depending on Mn and carrier densities, and is associated with transitions between heavy-hole and light-hole bands. In its zero frequency limit, our Hall conductivity reduces to the k\vec k-space Berry's phase value predicted by a recent theory of the anomalous Hall effect that is able to account quantitatively for experiment. We compute theoretical estimates for magnetic circular dichroism, Faraday rotation, and Kerr effect parameters as a function of Mn concentration and free carrier density. The mid-infrared response feature is present in each of these magneto-optical effects.Comment: 11 pages, 5 figure

    Interplane Transport and Superfluid Density in Layered Superconductors

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    We report on generic trends in the behavior of the interlayer penetration depth λc\lambda_c of several different classes of quasi two-dimensional superconductors including cuprates, Sr2_2RuO4_4, transition metal dichalcogenides and organic materials of the (BEDTTTF)2X(BEDT-TTF)_2X-series. Analysis of these trends reveals two distinct patterns in the scaling between the values of λc\lambda_c and the magnitude of the DC conductivity: one realized in the systems with a Fermi liquid (FL) ground state and the other seen in systems with a marked deviation from the FL response. The latter pattern is found primarily in under-doped cuprates and indicates a dramatic enhancement (factor 102\simeq 10^2) of the energy scale ΩC\Omega_C associated with the formation of the condensate compared to the data for the FL materials. We discuss implications of these results for the understanding of pairing in high-TcT_c cuprates.Comment: 4 pages, 2 figure

    Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States

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    Dynamical and transport properties of a simple single-band spin-fermion lattice model for (III,Mn)V diluted magnetic semiconductors (DMS) is here discussed using Monte Carlo simulations. This effort is a continuation of previous work (G. Alvarez, Phys. Rev. Lett. 89, 277202 (2002)) where the static properties of the model were studied. The present results support the view that the relevant regime of J/t (standard notation) is that of intermediate coupling, where carriers are only partially trapped near Mn spins, and locally ordered regions (clusters) are present above the Curie temperature T_C. This conclusion is based on the calculation of the resistivity vs. temperature, that shows a soft metal to insulator transition near T_C, as well on the analysis of the density-of-states and optical conductivity. In addition, in the clustered regime a large magnetoresistance is observed in simulations. Formal analogies between DMS and manganites are also discussed.Comment: Revtex4, 20 figures. References updated, minor changes to figures and tex

    Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

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    The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes

    Universal scaling in the dynamical conductivity of heavy fermion Ce and Yb compounds

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    Dynamical conductivity spectra s(w) have been measured for a diverse range of heavy-fermion (HF) Ce and Yb compounds. A characteristic excitation peak has been observed in the mid-infrared region of s(w) for all the compounds, and has been analyzed in terms of a simple model based on conduction (c)-f electron hybridized band. A universal scaling is found between the observed peak energies and the estimated c-f hybridization strengths of these HF compounds. This scaling demonstrates that the model of c-f hybridized band can generally and quantitatively describe the charge excitation spectra of a wide range of HF compounds.Comment: 5 pages, 1 table, 3 figures, to appear in J. Phys. Soc. Jpn. 76 (2007
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