34 research outputs found

    Nature of Magnetic Ordering in Cobalt‐Based Spinels

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    In this chapter, the nature of magnetic ordering in cobalt‐based spinels Co3O4, Co2SnO4, Co2TiO4, and Co2MnO4 is reviewed, and some new results that have not been reported before are presented. A systematic comparative analysis of various results available in the literature is presented with a focus on how occupation of the different cations on the A‐ and B‐sites and their electronic states affect the magnetic properties. This chapter specifically focuses on the issues related to (i) surface and finite‐size effects in pure Co3O4, (ii) magnetic‐compensation effect, (iii) co‐existence of ferrimagnetism and spin‐glass‐like ordering, (iv) giant coercivity (HC) and exchange bias (HEB) below the glassy state, and (v) sign‐reversal behavior of HEB across the ferri/antiferromagnetic Néel temperature (TN) in Co2TiO4 and Co2SnO4. Finally, some results on the low‐temperature anomalous magnetic behavior of Co2MnO4 spinels are presented

    Proximity-induced topological transition and strain-induced charge transfer in graphene/MoS2 bilayer heterostructures

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    Graphene/MoS2 heterostructures are formed by combining the nanosheets of graphene and monolayer MoS2. The electronic features of both constituent monolayers are rather well-preserved in the resultant heterostructure due to the weak van der Waals interaction between the layers. However, the proximity of MoS2 induces strong spin orbit coupling effect of strength ~1 meV in graphene, which is nearly three orders of magnitude larger than the intrinsic spin orbit coupling of pristine graphene. This opens a bandgap in graphene and further causes anticrossings of the spin-nondegenerate bands near the Dirac point. Lattice incommensurate graphene/MoS2 heterostructure exhibits interesting moire' patterns which have been observed in experiments. The electronic bandstructure of heterostructure is very sensitive to biaxial strain and interlayer twist. Although the Dirac cone of graphene remains intact and no charge-transfer between graphene and MoS2 layers occurs at ambient conditions, a strain-induced charge-transfer can be realized in graphene/MoS2 heterostructure. Application of a gate voltage reveals the occurrence of a topological phase transition in graphene/MoS2 heterostructure. In this chapter, we discuss the crystal structure, interlayer effects, electronic structure, spin states, and effects due to strain and substrate proximity on the electronic properties of graphene/MoS2 heterostructure. We further present an overview of the distinct topological quantum phases of graphene/MoS2 heterostructure and review the recent advancements in this field.Comment: 31 pages, 12 figure

    Kagome KMn3_3Sb5_5 metal: Magnetism, lattice dynamics, and anomalous Hall conductivity

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    Kagome metals are reported to exhibit remarkable properties, including superconductivity, charge density wave order, and a large anomalous Hall conductivity, which facilitate the implementation of spintronic devices. In this work, we study a novel kagome metal based on Mn magnetic sites in a KMn3_3Sb5_5 stoichiometry. By means of first-principles density functional theory calculations, we demonstrate that the studied compound is dynamically stable, locking the ferromagnetic order as the ground state configuration, thus preventing the charge-density-wave state as reported in its vanadium-based counterpart KV3_3Sb5_5. Our calculations predict that KMn3_3Sb5_5 exhibits an out-of-plane (001) ferromagnetic response as the ground state, allowing for the emergence of topologically protected Weyl nodes near the Fermi level and nonzero anomalous Hall conductivity (σij\sigma_{ij}) in this centrosymmetric system. We obtain a tangible σxy=314\sigma_{xy} = 314 S\cdotcm1^{-1} component, which is comparable to that of other kagome metals. Finally, we explore the effect of the on-site Coulomb repulsion (+U+U) on the structural and electronic properties and find that, although the lattice parameters and σxy\sigma_{xy} moderately vary with increasing +U+U, KMn3_3Sb5_5 stands as an ideal stable ferromagnetic kagome metal with a large anomalous Hall conductivity response

    Cyclic Ferroelectric Switching and Quantized Charge Transport in CuInP2_2S6_6

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    The van der Waals layered ferroelectric CuInP2_2S6_6 has been found to exhibit a variety of intriguing properties arising from the fact that the Cu ions are unusually mobile in this system. While the polarization switching mechanism is usually understood to arise from Cu ion motion within the monolayers, a second switching path involving Cu motion across the van der Waals gaps has been suggested. In this work, we perform zero-temperature first-principles calculations on such switching paths, focusing on two types that preserve the periodicity of the primitive unit cell: ``cooperative" paths preserving the system's glide mirror symmetry, and ``sequential" paths in which the two Cu ions in the unit cell move independently of each other. We find that CuInP2_2S6_6 features a rich and varied energy landscape, and that sequential paths are clearly favored energetically both for cross-gap and through-layer paths. Importantly, these segments can be assembled to comprise a globally insulating cycle with the out-of-plane polarization evolving by a quantum as the Cu ions shift to neighboring layers. In this sense, we argue that CuInP2_2S6_6 embodies the physics of a quantized adiabatic charge pump

    Low energy phases of bilayer Bi predicted by structure search in two dimensions

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    We employ an ab-initio structure search algorithm to explore the configurational space of Bi in quasi two dimensions. A confinement potential restricts the movement of atoms within a pre-defined thickness during structure search calculations within the minima hopping method to find the stable and metastable forms of bilayer Bi. In addition to recovering the two known low-energy structures (puckered monoclinic and buckled hexagonal), our calculations predict three new structures of bilayer Bi. We call these structures the α\alpha, β\beta, and γ\gamma phases of bilayer Bi, which are, respectively, 63, 72, and 83 meV/atom higher in energy than that of the monoclinic ground state, and thus potentially synthesizable using appropriate substrates. We also compare the structural, electronic, and vibrational properties of the different phases. The puckered monoclinic, buckled hexagonal, and β\beta phases exhibit a semiconducting energy gap, whereas α\alpha and γ\gamma phases are metallic. We notice an unusual Mexican-hat type band dispersion leading to a van Hove singularity in the buckled hexagonal bilayer Bi. Notably, we find symmetry-protected topological Dirac points in the electronic spectrum of the γ\gamma phase. The new structures suggest that bilayer Bi provides a novel playground to study distortion-mediated metal-insulator phase transitions
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